324M Search Results
324M Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| LPV324M/NOPB | Texas Instruments | General Purpose, Low Voltage, Low Power, Rail-to-Rail Output Operational Amplifiers 14-SOIC -40 to 85 |
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| LMV324MX/NOPB | Texas Instruments | General Purpose, Low Voltage, Rail-to-Rail Output Operational Amplifiers 14-SOIC -40 to 125 |
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| LM324MX | Texas Instruments | Low Power Quad Operational Amplifier 14-SOIC 0 to 70 |
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| LPV324MX/NOPB | Texas Instruments | General Purpose, Low Voltage, Low Power, Rail-to-Rail Output Operational Amplifiers 14-SOIC -40 to 85 |
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| LPV324MTX | Texas Instruments | General Purpose, Low Voltage, Low Power, Rail-to-Rail Output Operational Amplifiers 14-TSSOP -40 to 85 |
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324M Price and Stock
OMRON Industrial Automation E52IC15AYD324MT-COUPLE TYPE J L=15CM 4M |
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E52IC15AYD324M |
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OMRON Industrial Automation E52IC35AYD324MT-COUPLE TYPE J L=35CM 4M |
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E52IC35AYD324M |
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Microchip Technology Inc DSC1221CA3-24M00000TMEMS OSC LVCMOS 24MHz 20PPM 2.5-3.3V -40 to 125C 3.2 x |
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DSC1221CA3-24M00000T |
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DSC1221CA3-24M00000T | Tape & Reel | 8 Weeks | 1,000 |
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DSC1221CA3-24M00000T | Tape & Reel | 30 Weeks |
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Schurter Electronic Components TA35-C324M040C0TA35 Series Circuit Breaker 2 Pole Rocker 2 Pole Protected 240V Illumination Green transp. Rocker Printed Black -/o 4 A |
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TA35-C324M040C0 |
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TE Connectivity 55A7233-24-MSL4-9CS262755A Cable/Dual 10/ SM MOQ Reduction |
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55A7233-24-MSL4-9CS2627 |
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324M Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MB86H60
Abstract: HDMI YPbPr H.264 encoder arm H.264 encoder ethernet iso7816 iso7816 smart card MPEG-4 decoder CI ARM1176JZ LED IR RX tv tuner module secam
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mb86h60324mhzitu-r656iso7816+11 | |
dolby hd 7.1 decoder with usbContextual Info: DAC ARM11 @ 324MHz MB86H60 Cache TCM MMU Timer Audio decoder HD Video decoder AAC-LC, MP3, MPEG L1/L2 I n t ro d u ction This Fujitsu MB86H60 is a highly integrated System-on-Chip SoC and complies with the DVB standard currently used in various regions, mainly Europe. The LSI decodes full HD (1920dots x 1080lines) video |
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arm11324mhzmb86h601920dots+4 | |
tc90a50f
Abstract: cmos camera toshiba cmos memory camera 80A5 AK4323 TC35273 TC35274 TC90A70F toshiba lcd controller Toshiba confidential
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tc352733g-324m176x14470mhz+11 | |
3g call flow
Abstract: AN3092 MPC8260 N401 N402 3g call flow with message CSRL
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an30923g-324m3g call flowmpc8260+4 | |
TB0901AContextual Info: TAI-SAW TECHNOLOGY CO., LTD. No.3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales3@mail.taisaw.com Web: www.taisaw.com SAW Filter 324MHz 30MHz BW SMD 5.0x7.0 mm MODEL NO.: TB0901A |
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324mhz30mhztb0901a10mhz+2 | |
MB86H
Abstract: fujitsu hdd
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arm11324mhzmb86h601920dots+5 | |
MB86H60
Abstract: ARM11 hs spi 4x 4 keypad to 7 segment ARM11 processor block diagram ARM 7 processor pin configuration RGB888 ARM1176JZF-S HDMI Rx OSD scaler schematics dvb decoder ARM1176JZF-STM
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mb86h60arm11324mhzitu-r656+11 | |
TC51V16405
Abstract: TC51V16405c
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tcs1v1c405tc51v16405csjs/csts300miltcs1v16405+4 | |
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Contextual Info: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608 |
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tc5164805aj/aft/ajs/afts-40805aj/aft/ajs/afts32-pin | |
KAD5512P
Abstract: 001lV matte Power Supply Control IC dap 07 500MSPS KAD5512 KAD5512HP KAD5514P-25
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kad5512hp12-bit250/210/170/125mspsfn6808+9 | |
hp 530 motherboard circuit and solution
Abstract: 500765 IEC-297-1 hp 530 motherboard circuit Noryl GFN 2 - 701 zintec what are the dimensions of 19" rack, 3U height motherboard hp 530 hp 530 motherboard power supply solution bs476
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hp 530 motherboard circuit and solution500765iec-297-1hp 530 motherboard circuit+6 | |
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Contextual Info: Bridge Diode Surface Mounting Device •*WfN-äsH OUTLINE DIMENSIONS S1NBC 800V 1.5A «a± *nîEowcB, MMfàM memm*zmm<rc-£u RATINGS Absolute Maximum Ratings (ü fé *v > ifrê -T /= 2 5 <C ) * I Item Storage Temperature Operating Junction Temperature |
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324mm2 | |
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Contextual Info: デュアルインライン型 Bridge Diode Dual In-Line Package •外観図 OUTLINE S1NBB80 Unit : mm Weight : 0.29g (typ.) Package:1NA 6.8 800V 1A ④ 品名略号 Type No. 特長 • 小型 DIP パッケージ • 端子間 3.4mm 級表示(例) |
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s1nbb80 | |
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Contextual Info: Bridge Diode SMD/DIP •外観図 OUTLINE S1NBB80 Unit : mm Package:1NA (SMD) 6.8 ④ 品名略号 Type No. 特長 • 小型 SMDパッケージ または • 小型 DIP パッケージ • 端子間 3.4mm 級表示(例) Class ロット記号(例) |
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Contextual Info: •HYUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process |
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1mx1616-bit | |
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Contextual Info: •HYUNDAI H Y 5 1 V 1 7 4 0 4 B ,H Y 5 1 V 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process |
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Contextual Info: H Y 5 1 V 1 7 4 1 0 A • H Y U N D A I S e r ie s 4M X 4-blt CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51 V17410Ais the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY51V17410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide |
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v17410aishy51v17410ahy51v1741d36-00-may94+5 | |
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Contextual Info: HY51V17400A Series •HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide |
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hy51v17400a1ad35-00-may95hy51v17400ajhy51v17400aslj+2 | |
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Contextual Info: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques |
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hy51v16100b4b750fl1ad43-00-may95qq04374+2 | |
K4C560838C-TCBContextual Info: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM |
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k4c5608/1638c256mborga41k4c560838c-tcb | |
MSM51V17405F
Abstract: CA10 MSM51V17405
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msm51v17405fca10msm51v17405 | |
MSM51V16405F
Abstract: MSM51V16405
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msm51v16405fmsm51v16405 | |
l4flContextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC51V17400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC51V17400BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC51V17400BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both |
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tc51v17400bst-60/70tc51v17400bst300mildr16050394+3 | |
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Contextual Info: TOSHIBA- m TQTTSHfi 00BB307 7Dfi • T C 5 1 V 1 7 4 0 0 B S T -6 0 /7 0 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM cs Description T heTC51V17400BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC51V17400BST uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar |
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00bb307hetc51v17400bsttc51v17400bst300mil+1 | |