319B Search Results

Contextual Info: HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI ADE-208-319B Z Rev. 2 Jan. 1996 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0£2max) • M PAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI ADE-208-319B Z Rev. 2 Jan. 1996 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0i2max) • MPAK package is suitable for high density surface mounting and high speed assembly.

tr 13001

Abstract: 13001 H si 13001 n50X 1STD-8831 U3D41 13001 si id ST 13001 T flip flop IC curcuit 1N3064
Contextual Info: MIL-M- 38510/ 319B 4 March 1985_ _ M I L - M - 3 8 5 1 0 / 3 1 9A 22 J u l y 1982 MI L I TARY SPECI FI CATI ON MI CROCI RCUI TS, D I G I T A L , LOW POWER SCHOTTKY T T L , 4 - B Y - 4 REGISTER F I L E , CASCADABLE, MONOLI TH I C SI LI CON This s p e c ific a tio n is

HVM132WK

Abstract: SC-59A Hitachi DSA00304
Contextual Info: ADE-208-319B Z HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching Rev. 2 Jan. 1996 Features Outline • Low capacitance.(C=0.5pF max) • Low forward resistance. (rf=2.0Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

03p4

Abstract: Hitachi DSA001653
Contextual Info: HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-319B Z Rev. 2 Jan. 1996 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0Ωmax) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: H ITACHI ADE-208-319B Z HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI Features Rev. 2 Jan. 1996 Outline n3 Low capacitance.(C=0.5pF max) • Low forward resistance. (rp 2 .0 £ i max) • M P A K package is suitable fo r high density

319C

Abstract: gdfp2-f16 national
Contextual Info: INCH-POUND MIL-M-38510/319C 14 July 2003 _ SUPERSEDING MIL-M-38510/319B 4 March 1985 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, LOW-POWER SCHOTTKY TTL, 4 BY 4 REGISTER FILE, CASCADABLE, MONOLITHIC SILICON Inactive for new design after 18 April 1997. This specification is approved for use by all Departments

100k Linear slide Potentiometer

Abstract: 700-136
Contextual Info: Date: 08/18/06 Ref.#: TW-700136 Potentiometer 312-319BF-Value 45 41 2 8 5 M2 x .4 1.2 35 3 10±.5 7 2 4 1 3 3.75 ø1.5 +.2 -0 3.5 PCB mounting holes 35 Dimensions (mm) Specifications: • Type: linear taper with white indicator • Total resistance: 1KΩ~1MΩ

MHW707-2

Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

interposing CT

Abstract: slce capacitor interposing relay interposing 1mdu04007-en RXSGA 016-BEN interposing CT, technical 1MRK 514 001-BEN calculation of transformer differential relay setting
Contextual Info: Multi-purpose percentage restraint differential protection RADSC 1MRK 509 016-BEN Page 1 Issued June 2002 Changed since June 1999 Data subject to change without notice SE970169 Features • Complete phase and earth fault protection for generators, motors, reactors, cables or

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

2865002402

Abstract: 6435 fet MRF136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF136 M RF136Y N -C hannel Enhancem ent-M ode MOSFETs . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.

Contextual Info: REV. CHARACTER DETAIL P /N LCM-X STANDARD S HIGH TEMP. H 3 ,5 5 DESCRIPTION SR STN, REFLECTIVE SF STN, TRANSFLECTIVE W/ BACKLIGHT TR TN, REFLECTIVE TF TN, TRANSFLECTIVE(W/ BACKLIGHT) LCM—X 0 1 6 0 2 D X X / C A E.C.N. #1OBRDR. & REDRAWN. DATE 1G- 2 - 9 8

Contextual Info: 1 111111111111111 11111 1 111111111111111 1 111111111111111 1 111111111111111 1 1 123456789AB11CDEDFD1C111 111111111 1 11111111 1 11 D14F 123314567891A758BCD814E1F3D167D1F1C5A36 DE11D16A99  !"#$%&16A991' 4*+1(C1,FF1!"#1DDEDC

OUTCCIEXT-C0000

Abstract: CCI000C0M000 backshell STRAIGHT CCI000D0F006 cci 2001 OUT0405-0148AS OUTCCIEXT-D0000 24-34F Connecteurs 84
Contextual Info: Division Connecteurs Industriels Gamme / Series CCI-CMI • Connecteur de commande version plastique ou métallique / Control connector, plastic or metallic version ■ Encombrement réduit / Compact dimension ■ Cablage simple et rapide / Easy and quick wiring

M430F1232

Abstract: rtd pt-100 amplifier circuit bel 187 transistor npn pnp transistor data sheet bel 188 pt100 temperature sensor schematic msp430 pt100 temperature sensor schematic bel 187 NPN TRANSISTOR 43a Hall Effect Magnetic Sensors circuit diagram of wireless door lock system amplifier 5.1 surrounding system circuit diagram
Contextual Info: TEAM LRN Analog and Digital Circuits for Electronic Control System Applications TEAM LRN Analog and Digital Circuits for Electronic Control System Applications Using the TI MSP430 Microcontroller by Jerry Luecke AMSTERDAM • BOSTON • HEIDELBERG • LONDON

MP21E

Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
Contextual Info: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR

KU616

Contextual Info: QUICK REFERENCE GUIDE FREQ U EN CY RANGE G H z M O D EL NO. PAGE N O. C o a x ia l to W a v e g u id e A d a p te rs - T y p e N 1.12-1.70 1.70-2.60 2 .60-3.95 3 .95-5.95 5.30-8.20 7.0 5 -1 0.0 8.2 0 -1 2.4 8.2 0 -1 2.4 12.4-18.0 D(L) D/E (US) E/F (S) F/G (C)

razfe recloser

Abstract: TT214 BROWN BOVERI Relay manual 220V 17A Relay RAZOG Brown Boveri itl 12-1 BROWN BOVERI DISTANCE RELAYS BROWN BOVERI AUXILIARY RELAY RXIDF 2H asea RK 216
Contextual Info: A » m m 1 » Info-No. » INFORMATION RK 851-304 E ASEA B R O W N BOVERI From/Date Reg. ABB Relays ^ R’ December 1982 5651 Edition 1 Page 1 R eplaces C atalo gue RK 85-18 E RECLOSING RELAY TYPE RAAAF Two delayed th re e -p h a se reclosing a t te m p t s

automatic phase selector circuit diagram

Abstract: RAZOA M114A RAZOG schematic diagram ac circuit breaker AUTOMATIC PHASE SELECTOR for three phase BROWN BOVERI Relay manual introduction of automatic phase selector distance relay BROWN BOVERI DISTANCE RELAYS
Contextual Info: Info-No. A llll asea b ro w n b o v e r , A nn n i ABB Relays INFORMATION From/Date RFR, May 1983 Edition 1 RK 851-306E Reg. 5651 RECLOSING RELAY TYPE RAAAN Two delayed reclosing attem pts. First a tte m p t selectable single or three-phase, second a tte m p t three-phase.

chw marking sot23

Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu

MRF140

Abstract: mrf151g 300 blf245 MRF174 "cross-reference" motorola MRF150 04 150 MRF150 MRF157 SOT123 BLF546
Contextual Info: Version 1.0 Date: 2002-08-01 PHILIPS VDMOS Cross-Reference List UHF Philips Type VDMOS BLF548 Motorola Type TMOS MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 BLF542 MRF160 BLF404 BLF521 MRF158 BLF368 MRF141G BLF278 Motorola Philips