3166 Search Results

Contextual Info: SZM-3166Z SZM-3166Z 3.3GHz to 3.6GHz 2W Power Amplifier 3.3GHz to 3.6GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier

Contextual Info: 4M x 16-Bit Dynamic RAM 8k, 4k & 2k Refresh HYB 3164160AT(L) -40/-50/-60 HYB 3165160AT(L) -40/-50/-60 HYB 3166160AT(L) -40/-50/-60 Advanced Information • 4 194 304 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation

SIEMENS BST

Abstract: A712S siemens 230 96 SIEMENS BST P smd 42t MAS 10 RCD SIEMENS BST h 05 60 SIEMENS BST g 02 60 HPC16 SIEMENS BST N 35
Contextual Info: SIEM ENS 4M x 16-Bit Dynamic RAM HYB 3164165AT L -40/-50/-60 (8k, 4k & 2k-Refresh, EDO-version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 P re lim in ary Info rm ation • 4 194 304 words by 16-bit organization • 0 to 70 ”C operating temperature

METAL DETECTOR using microcontroller

Abstract: 3161 "MULTOS"
Contextual Info: H8/3161, H8/3166 and H8/3114 High Security Smart Card Microcontroller Features H8/3161 H8/3166 H8/3114 4.25Kbytes EEPROM; 32Kbytes ROM; 1Kbytes RAM 2.25Kbytes EEPROM; 32Kbytes ROM; 1Kbytes RAM 16.5Kbytes EEPROM; 32Kbytes ROM; 2.5Kbytes RAM Security Applications

um3166

Contextual Info: UNITED MI CR OELE C T R ON I C S TE D Ë J ‘ïBESfllE ODQDSbb 1 9 3 25812 UNITED MICR O E L E C T R O N I C S 92D 00566 LJlYiO D U M 3166AG r -1 o ; Simple Melody Generator Features • 64-note ROM memory ■ Direct piezo drive ■ 1.3V to 3.3V power supply and low power consumption

Contextual Info: REVISIONS REV. D E S C R IP T IO N DATE BY Mark on Top: White dot for Pin 1 22558-31668X S/N XXX Date Code Classification MIL-PRF-27 Grade: MIL-PRF-27 Class: Maximum Ambient Temperature: 5 S 130° C 105° C MIL-STD-981 Quality Assurance Provisions Class

Contextual Info: SIEMENS 4M x 16-Bit Dynamic RAM HY b 3164165AT L -40/-50/-60 (8k, 4k & 2k Refresh, EDO-version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 Preliminary Information • 4 194 304 words by 16-bit organization • 0 to 70 °C operating temperature

Contextual Info: SIEMENS BYM 600 A 170 DN2 Diode Power Module Preliminary data • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 170 DN 2 E 3166 Type BYM 600 A 170 DN2 Vr25 ¥ dc

C67070-A2902-A67

Abstract: VR25 bsm 300 ga 160 dn
Contextual Info: BYM 600 A 170 DN2 Diode Power Module Preliminary data • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 170 DN 2 E 3166 Type VR25 IFDC BYM 600 A 170 DN2 1700V 600A

Contextual Info: DASH NO. M CODE MADE FROM GSD REVISIONS CHANGES O j ER JCA CO o 1-0 31668 04 MAY 90 ^1 I o o r-o o NOTES: 1. 2. 3. 4. 5. FOR USE WITH M 17/110-R G 302 CABLE. FOR CABLE TRIMMING USE K T J-1 13 & KTD-184. FOR CRIMPING USE DIE SIZE 02. FOR CABLING INSTRUCTIONS SEE C P -4 6 5 .

MCH185A3R9DK

Abstract: SZM-3166Z SZM3166Z tRANSISTOR 2.7 3.1 3.5 GHZ cw 3166Z
Contextual Info: SZM-3166Z SZM-3166Z 3.3 GHz to 3.6 GHz 2W Power Amplifier 3.3 GHz to 3.6 GHz 2W POWER AMPLIFIER Package: QFN, 6 mm x 6 mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

PEB 4165 T

Abstract: 4166 ic equivalent SPT170 PEB31664 PEB31666 PEB4164 P-MQFP-64-1 PEB 4166 T
Contextual Info: Pr eli mi nar y Dat a Sh eet , DS1 , No v. 20 00 MuPP µC Multichannel Processor for POTS PEB 31666 Version 1.3 PEB 31664 Version 1.3 W ir e d C o m m u n i c a t io n N e v e r s t o p t h i n k i n g . Edition 2000-11-06 Published by Infineon Technologies AG,

Contextual Info: SENSITRON SEMICONDUCTOR
Technical Data
Data Sheet 3166, Rev. A




  


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vpc3 b

Abstract: SZM-3166Z SZM3166
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

Contextual Info: 3D> P R IN T D 1ST Si « 1 2 •«« D IM EN S IO N S £iO h I METRIC IN MM. DO NOT S C A L E P R IN T NUMBER = rd C-316614 ANGLE P R O JE C T IO N 8 REEL OUMETER 'J6Tl'"hm - FLANGE -7 r. p | t a 1 „ w t li Az : j - > CORE 01 HH6TEH

2SK1237

Abstract: 25CC
Contextual Info: J I SAiYO 2SK1237 No.3166 N-Channel GaAs MES FET 12GHz-Band Local Oscillator, _ Amp lifìey\Appli cations I Nv> F eatu re s •Ceramic package ■High gain ■Adoption of high reliable protection film "1%, A bsolute M axim um R atings a tT a —25°C

HYB3164165AT

Contextual Info: 4M x 16-Bit Dynamic RAM HYB 3164165AT L -40/-50/-60 HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 (8k, 4k & 2k Refresh, EDO-Version) Advanced Information • • • • • • • • • • • 4 194 304 words by 16-bit organization 0 to 70 °C operating temperature

16-DRAM

Abstract: HYB3164160AT TSOP 50 Package
Contextual Info: 4M x 16-Bit Dynamic RAM 8k, 4k & 2k Refresh HYB 3164160AT(L) -40/-50/-60 HYB 3165160AT(L) -40/-50/-60 HYB 3166160AT(L) -40/-50/-60 Advanced Information • 4 194 304 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation

3161

Abstract: METAL DETECTOR using microcontroller 3166 "electronic purse" "MULTOS"
Contextual Info: H8/3161, H8/3166 and H8/3114 High Security Smart Card Microcontroller Features H8/3161 H8/3166 H8/3114 4.25kbytes EEPROM; 32kbytes ROM; 1kbyte RAM 2.25kbytes EEPROM; 32kbytes ROM; 1kbyte RAM 16.5kbytes EEPROM; 32kbytes ROM; 2.5kbyte RAM Security Applications

bsm 300 ga 160 dn

Contextual Info: BYM 600 A 170 DN2 Diode Power Module • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 170 DN 2 E 3166 Type VR25 IFDC BYM 600 A 170 DN2 1700V 600A Package Ordering Code

Contextual Info: SIEMENS 4M x 16-Bit Dynamic RAM HY b 3164165AT L -40/-50/-60 (8k, 4k & 2k Refresh, EDO-Version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 Advanced Information • 4 194 304 words by 16-bit organization • 0 to 70 °C operating temperature

Contextual Info: SIEMENS 4M x 16-Bit Dynamic RAM HY b 3164165BT L -40/-50/-60 (8k, 4k & 2k Refresh, EDO-version) HYB 3165165BT(L) -40/-50/-60 HYB 3166165BT(L) -40/-50/-60 Preliminary Information • 4 194 304 words by 16-bit organization • 0 to 70 °C operating temperature

AHV-SLIC

Abstract: PEB 4165 T QAP-3 PEB31665
Contextual Info: T The Multichannel Subscriber Line Interface Coefficients Software package MuSLICOS is the tool to calculate and program the coefficients for the MuSLIC chipset, which includes: PEB 31665/PEB 31666 (MuPP), PEB 3465 (QAP) and PEB 4165/PEB 4166 (AHV-SLIC).

5084

Abstract: UKIS Hitachi DSA00480 monos
Contextual Info: July 2002 H8/3166 High Security Smart card Microcontroller Features . 2.25KBytes EEPROM . 32 KBytes ROM . 1 KBytes RAM Security: As with every Smart Card microcontroller from Hitachi, the H8/3166 has been designed with the most demanding of security-conscious applications in mind. The design includes