30E TRANSISTOR Search Results

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30E 2Y /E3Y-2H Ic Collector current. 30A Vcex Collector-emitter vo ltag e 1000V hFE DC current gain. 75 Insulated Type

transistor cay

Contextual Info: MITSUBISHI TRANSISTOR MODULES 30E 2Y Q M \ / E 3Y - H j MEDIUM POWER SWITCHING USE INSULATED TYPE 3 ! QM30E2Y/E3Y-H • lc • V cex • Hfe Collector current. 30A j Collector-emitter voltage. 600V DC current gain. 75

PS6002

Abstract: "Schmitt Trigger" reflective sensor 4 pin PS5001HR L427S25 aperture pari PHOTO TR schmitt trigger ic PS5002HC
Contextual Info: N E C ELECTRONICS INC L.427S25 0025277 1 • 30E D NEC OPTOELECTRONIC DEVICES Photo Interrupters cont. Transistor Output Type (cont.) Part Number Characteristics (Ta = 25°C) Outline CTR (%) Features Vç e PS6001A 100 (pA) to Photo Reflective Sensor Single Tr.

2N6674

Abstract: 2N6675 2N6075 00210
Contextual Info: SGS-THOMSON «LlieraWöOi_ S G S-THOMSON 30E 2N6674 2N6675 D NPN HIGH VOLTAGE POWER TRANSISTORS • ■ ■ ■ ■ SWITCHING REGULATORS INVERTERS SOLENOID AND RELAY DRIVERS MOTOR CONTROLS DEFLECTION CIRCUITS DESCRIPTION High voltage, high speed switching power transis­

Contextual Info: • 7^ 5^237 ODB^m ? ^ ■ H " '3 3 ~ S _ SGS-THOMSON 2N6674 ML[lo @iOOi_2N6675 S G S-THOMSON 30E D NPN HIGH VOLTAGE POWER TRANSISTORS ■ ■ ■ ■ ■ SWITCHING REGULATORS INVERTERS SOLENOID AND RELAY DRIVERS MOTOR CONTROLS DEFLECTION CIRCUITS

IC SO5

Abstract: FOR TRANSISTOR BC 149 B transistor Bc 287 R3315 BUV298F BUV298V JUV298F transistor BC 583
Contextual Info: 30E D • 7121237 G03GMQÔ 2 WÊ SCS-THOMSON J _ Ü ^ H0"S«NJUV298F HLKgüWWi T-3S'i5 BUV298V NPN TRANSISTOR POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS

Contextual Info: N EC ELECTRONICS INC 30E D L^27S55 0 02T77b b • T " .4 |-7 5 PHOTO INTERRUPTER PS4008 PHOTO INTERRUPTER DESCRIPTION PACKAGE DIMENSIONS The PS4008 photo coupled interrupter module containing a GaAs in millimeters inches light em itting diode and an NPN silicon photo-transistor,

Contextual Info: N E C ELECTRONICS INC 30E D o • b427525 00aih3h 1 ■ T-HI-fS PHOTO COUPLER P S 1 1 PHOTO COUPLER INDUSTRIAL USE DESCRIPTION The PS1001 is an optically coupled isolator containing a GaAs light em itting diode and an NPN sillicon photo transistor.

BF458-BF459

Abstract: JEDECTO126 BF459 BF457 BF458 transistors 458 g1412 bf459 transistor npn transistors, video amplifiers horizontal COLOUR TV SCHEMATIC DIAGRAM
Contextual Info: 30E T> m 7T5RE37 0030^3^ SGS-THOMSON _ED iliàH^^ â [MOei S G S-TH0MS0N 0 • " T '3 3 'O f? BF457 BF458-BF459 - - HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTION The BF457, BF458 and BF459 are silicon planar epitaxial NPN transistors in JedecTO-126 plastic

PS2031

Abstract: NEC ps2031
Contextual Info: N E C ELECTRONICS INC b427525 0 0 2 ^ 5 2 T • 30E D o £3 PHOTO COUPLER PS2031 PHOTO COUPLER High Collector to Emitter Voltage Single Transistor DESCRIPTION The PS2031 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo transistor.

PS6002

Abstract: "Schmitt Trigger"
Contextual Info: N E C ELECTRONICS INC 30E D • L.4E7S25 0025577 1 ■ SEC OPTOELECTRONIC DEVICES r - i I-73 Photo Interrupters cont. Transistor Output Type (cont.) Part Number Characteristics (Ta = 25°C) Outline CTR (%) lF Features VQE PS6001A m p i 100 (¿/A) to Photo Reflective Sensor

Contextual Info: 7R5R537 OQaqOTI M: • / T m 3 1 - 0 7 _ SCS-THOMSON g^ gm[iCT«(gS_ S G MJE200 MJE210 S-THOMSON 30E ] COMPLEMENTARY POWER TRANSISTORS DESC RIPTIO N The MJE200 (NPN type) and MJE210 (PNP type) are silicon epitaxial-base transistors in Jedec

BUX43

Contextual Info: SGS-THOMSON IMIBCB lllLieTB©C80e8 S G S - T HO MS ON BUX43 30E D HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUX43 is a silicon multiepitaxiai mesa NPN transistor in Jedec TO-3 metal case, intented for high voltage, fast switching applications. TO -3 ABSOLUTE MAXIMUM RATINGS

BUX13

Contextual Info: _ f Z 7 • 7^537 oosaqsq g _ S G S - T H O M S O N ^ 7 # BUX13 S:_G.S.-THOMSON 30E » HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUX13 is a silicon multiepitaxiai mesa NPN transistor in Jedec TO-3 metal case, intended for high voltage, fast switching applications.

transistor 1248

Abstract: buf832
Contextual Info: 30E D SGS-THOMSON 7 ^ 5 3 7 S ÜQ3D37G G s-thom son m 3 3UF832F BUF832V •'P S fc -lS NPN TRANSISTOR POWER MODULE ADVANCE DATA . . • ■ ■ HIGH VOLTAGE, HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE ISOLATED CASE 2500V RMS EASY TO MOUNT

Contextual Info: 30E d • Goaiaas ? ■ SCS-THOMSON HkHOT «! ^ 1 A -Z 3 > BFY50-B FY51 BFY52 S G S-THOMSON MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear

SE303 IR

Abstract: SE303 PH105 T-41-61 transistor c 4161
Contextual Info: N E C ELECTRONICS INC 30E D • ^57525 ODa^Sñ? 3 ■ o The PH 105 is a photo transistor in a plastic molded package, and matched PACKAGE DIMENSIONS spectrally and mechanically with SE303 IR Emitter. in millimeter« (inches ABSOLUTE MAXIMUM RATINGS (Ta»25 °C)

Contextual Info: 30E J> S G S-THOMSON SGS-THOMSON ¡y 5 Î. BUZ11 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 7 0 x 1 7 0 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source

transistor 647

Abstract: BUZ71 PVAPOX 647 transistor
Contextual Info: 30E J> • 7T2T2_37 DO 3D 1Sb 3 M ^ ^ O i - S G S -T H O M S O N s 6 - s-thomson = L[I(g¥GM0 S BUZ71 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:

2n4033

Contextual Info: 30E D • 7^237 GQ312D7 fi ■ SGS-THOMSON ~T'37-l5 2N4030-2N4031 2N 4032-2N 4033 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030,2N4031, 2N4032, and 2N4033 are si­ licon planar epitaxial PNP transistors in Jedec TO-39 metal case primarily intended for large signal,

TSD5MG40V

Abstract: STHV102 TSD5MG40F sthv QG30S
Contextual Info: 30E D • 71S1SB7 DQ3058b H T '- S f i- lS SGS-THOMSON s s . CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE S-THOMSON N TYPE V dss Ros on Id TSD5MG40F/V 1000 V 0.7 n 17 A ■ . ■ ■ ■ ■ . « TSD5MG40F TSD5MG40V HIGH CURRENT POWER MOS MODULE

BF658

Abstract: BF659 BF658-BF659 BF657
Contextual Info: 30E D • 7^237 G03Cm3 2 ■ SCS-THOMSON iLICTGMOOS 'T-‘3 3 ' Ô ^ _ BF657 BF658-BF659 s 6 S-THOMSON MEDIUM POWER VIDEO AMPLIFIERS DESCRIPTIO N The BF657, BF658 and BF659 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for application with

BUW22AP

Abstract: BUW22P BUW22 BUW22A
Contextual Info: 7^537 QQSaaCH T • H^-33-Z-l SGS-THOMSON BUW22/22P [¡«^ »[iCTtMntgS_BUW22A/22AP G S-THOMSON 30E » HIGH VOLTAGE POWER SWITCH DESC RIPTIO N The BUW22, BUW22A are silicon multiepitaxial me­ sa PNP transistor in Jedec TO-3 metal case, particulary intended for switching applications.

Contextual Info: • 7= ^ 231^0020737 0 ■ ¡" " P '3 3 “ì3 _ SGS-THOMSON ¡[ L ìO T q « S S G S-TH0MS0N BUV42A 30E ]> FAST SWITCHING POWER TRANSISTOR ■ FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERA­