30CTQ050S Search Results

30CTQ

Abstract: 30CTQ060-1 30CTQ060S 40HFL40S02 IRFP460
Contextual Info: 30CTQ.SPbF, 30CTQ.-1PbF Vishay High Power Products Schottky Rectifier, 2 x 15 A FEATURES 30CTQ.-1PbF 30CTQ.SPbF • • • • • Base common cathode 2 Base common cathode 2 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode D2PAK

30CTQ

Abstract: 30CTQ060-1 30CTQ060S 40HFL40S02 IRFP460
Contextual Info: 30CTQ.SPbF/30CTQ.-1PbF Vishay High Power Products Schottky Rectifier, 2 x 15 A FEATURES 30CTQ.-1PbF 30CTQ.SPbF • 150 °C TJ operation Available • Center tap configuration RoHS* • Very low forward voltage drop COMPLIANT • High frequency operation

30CTQ060S

Abstract: 30CTQ 30CTQ050-1 30CTQ050S 30CTQ060-1 40HFL40S02 IRFP460
Contextual Info: 30CTQ.S/30CTQ.-1 Vishay High Power Products Schottky Rectifier, 2 x 15 A FEATURES 30CTQ.-1 30CTQ.S • 150 °C TJ operation • Center tap configuration • Very low forward voltage drop • High frequency operation Base common cathode 2 Base common

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

203CNQ100

Abstract: 122NQ030R MBR1535 21FQ040 121NQ035 189NQ
Contextual Info: Schottky Diodes www.irf.com Part Number V RRM V I FAV @TC (A) (C) VFM @I FM I RM @VRWM E AS I AR 25°C 25°C (mA) (mA) (mJ) (A) Max T J (°C) Fax on Demand Number Case Outline Key Surface-Mount Packages SMB 10BQ100 100 1 152 0.78 10BQ015 15 10BQ040 40 10BQ060

30CTQ

Abstract: 30CTQ050 30CTQ050-1 30CTQ050S 30CTQ060 30CTQ060-1 30CTQ060S 40HFL40S02 IRFP460 SMD-220
Contextual Info: PD-2.300 rev. B 04/99 30CTQ. 30CTQ.S 30CTQ.-1 SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Description/Features Characteristics Values Units IF AV Rectangular 30 A 50 / 60 V waveform VRRM This center tap Schottky rrectifier has been optimized for very

Contextual Info: international Schottky Diode lioRRecdfier Center Tap - Surface Mount 6.6-30 Amps 6 Part Num ber >F(AV) @ TC (A) (°C) V FM @ (FM (D (V ) VR R M (V) (2 ) (3 ) eAS (m J ) •a r 30 40 50 60 90 100 6.6 6.6 6.6 6.6 6.6 6.6 97 97 92 92 94 94 0.63 0.63 0.67 0.67

Contextual Info: 30CTQ50/60 30CTQ50/60S 30CTQ50/60-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0683, Rev. - Green Products 30CTQ50/60/30CTQ50/60S /30CTQ50/60-1 SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes

I2CTQ045S

Abstract: RBI54 i6ctq BRB2080CT
Contextual Info: Schottky Diodes Internationa! IOR Rectifier Part Number VRMM V •rm @ vrwm ^FM @ I fM MaxTj eAS *ar 2S°C 25°C (mA) (mA) (°C) (mi) (A) •fav@ tc W (C) Fax on Demand Number Notes Surface-Mount Packages Outline Key Center Tap D2Pak M BRB2080CT SO I0 133

smd diode f54

Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Contextual Info: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040

smb 440a

Abstract: 81CNQ050 100V 25A schottky 168CMQ060 60L30CT 201CNQ050 TO244AB 60hq100 diode 35v 10a 241NQ045
Contextual Info: Surface Mount Schottky Navigator Current Voltage illustrations not to scale 15V 15V 15V 15V 15V 15V 1A 3A 19A 40A 60A 80A 20V 20V 20V 20V 20V 20V 20V 20V 20V 1A 2A 5A 6A 12A 3A 40A 60A 80A 30V 30V 30V 30V 30V 30V 30V 30V 30V 30V 1A 2A 3A 5A 6A 12A 30A 40A

d2p smd code

Contextual Info: PD-2.300 rev. B 04/99 3 0 C T Q . . 3 0 C T Q . .S 30CTQ.-1 International Rectifier I R 30 Amp SCHOTTKY RECTIFIER M ajor Ratings and Characteristics Description/Features Characteristics Values Units l F Av Rectan9 ular waveform 30 A 5 0 /6 0 V V RRM

30CTQ060S

Abstract: 30CTQ 40HF P460 SMD-220
Contextual Info: Bulletin PD-21018 rev. A 07/06 30CTQ.SPbF 30CTQ.-1PbF 30 Amp SCHOTTKY RECTIFIER IF AV = 30Amp VR = 50 - 60V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 30 A 50 - 60 V IFSM @ tp = 5 s sine 1000

209CmQ150

Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
Contextual Info: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

20332

Abstract: 15CTQ035
Contextual Info: I n t e r n a t io n a l R e c t if ie r 1 Schottky Diodes Pm Number •F AV «TC jnrpacfcaç Vrrm (Vollt) PI « v f m o if m eas (Vote) ml fafcdVm m i >AR (Ampt) mA (3) P)*RM« Mu l Tj •c Notof Fu-onDamand Numlm Cut Styl«, (Cau OullrM) (1) Surfac* Mount

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

mbrf1060ctl

Contextual Info: Schottky Rectifiers Peak Inverse Voltage VRWM Max. Average Forward Current (Io) Max. Reverse Leakage Current (IR) Max. Forward Voltage Drop (VF) Max. Junction Capacitance (Cj) (A) Max. Forward Surge Current (IFSM) (A) (V) 30 (mA) (V) (pF) 0.2 4 0.0005 1