30A22 Search Results

MID-30A225

Contextual Info: T-1 PACKAGE NPN PHOTOTRANSISTOR Description MID-30A225 Package Dimensions The MID-30A225 is a NPN silicon phototransistor Unit : mm inches ψ3.00 (.118) 4.00 (.157) mounted in a lensed , special dark plastic package. 5.25 (.207) 1.00 (.040) 0.80±0.50 (.032±.020)

Contextual Info: 512Kx32/256Kx16/128Kx32, 150ns, TSOP STACK 30A229-00 A M-Densus High Density Memory Device 4 Megabit High Speed EEPROM DPE128X32Y5 ADVANCED INFORMATION DESCRIPTION: The DPE128X32Y5 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may

4mx32

Abstract: sdram 4 bank 4096 16 TSOP 66 Package DPSD4MX32RY5
Contextual Info: 4Mx32, 7.5 - 15ns, P12, M-Densus 30A225-02 A M-Densus 128 Megabit Synchronous DRAM DPSD4MX32RY5 High Density Memory Device PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member

DPSD8MX16RKY5

Contextual Info: 8Mx16, 7.5 - 15ns, P12, M-Densus 30A220-10 B M-Densus 128 Megabit Synchronous DRAM DPSD8MX16RKY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are

MID-30A22

Contextual Info: T-1 PACKAGE NPN PHOTOTRANSISTOR Description MID-30A22 Package Dimensions Unit: mm inches The MID-30A22 is a NPN silicon phototransistor mou- ψ3.00 (.118) 4.00 (.157) nted in a lensed , special dark plastic package.The lensing effect of the package allows an acceptance half view

Contextual Info: 32Mx4, 50 - 60ns, TSOP Stack 30A221-10 A M-Densus 128 Megabit CMOS 3.3V EDO DRAM DP3ED32MX4RKY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family which utilizes the new and innovative space saving TSOP

30A221-00

Contextual Info: 32Mx4, 50 - 60ns, TSOP Stack 30A221-00 A M-Densus 128 Megabit CMOS 3.3V EDO DRAM DP3ED32MX4RY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family which utilizes the new and innovative space saving TSOP

DPSD16MX8RKY5

Abstract: 53a00100
Contextual Info: 16Mx8, 7.5 - 15ns, P12, M-Densus 30A227-00 B M-Densus 128 Megabit Synchronous DRAM DPSD16MX8RKY5 High Density Memory Device PRELIMINARY DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are

16Mx8 dram EDO

Abstract: code edo DENSE-PAC
Contextual Info: 16Mx8 50 - 60ns, TSOP Stack 30A228-10 A M-Densus 128 Megabit CMOS 3.3V EDO DRAM DP3ED16MX8RKY5 High Density Memory Device ADVANCED INFORMATION DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family

DPSD8MX16RY5

Contextual Info: 8Mx16, 7.5 - 15ns, P12, M-Densus 30A220-00 B M-Densus 128 Megabit Synchronous DRAM DPSD8MX16RY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are

DPSD8MX32TY5

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD8MX32TY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of this family which utilizes the space saving LP-Stack™ TSOP

Contextual Info: DENSE-PAC M icrosystem s /H-'De.nSÜS 12 8 Megabit SDRAM w /SSTL dpsd8M X1 6 RSKY5 ¡-¡¡gfo Density Memory Device DESCRIPTION: The /U-'Detmu series is a Jam Hy o f inteinhangeabJe m em oiym oduJes. The 128 M egab±SD RAM isam em b e r ofthjs6m j]yw hi±iutLljzesthenew and innovative qpace

Contextual Info: DENSE-PAC MICROSYSTEMS Mt n t »a /H-Dênsus dpddigmxsribys D 128 Megabit CM O S D D R SDRAM Aa "7\ ^ High Density Memory Device pd d 16m xsrsbys ADVANCED INFORMATION DESCRIPTION: The/U-'Datitu series is a family of interchangeable memory devices. The 128 Megabit Double Data Rate Synchronous DRAM is a member

Contextual Info: M t n t» DENSE-PAC MICROSYSTEMS Aa a ^ "7\ /H -T > M S M 128 Megabit C M O S D D R S D R A M D PD D 16M X 8RLA Y5 D pd d 16m x s r s a y s High Density Memory Device A D V A N C E D IN F O R M A T IO N DESCRIPTION: T h e /ti-D e m ia series is a family of interchangeable memory devices.

Contextual Info: M-Densus 256 Megabit CMOS 3.3V EDO DRAM DP3ED32MX8RY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family which utilizes the new and innovative space saving TSOP

DPSD4MX32RY5

Abstract: 75P1
Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit Synchronous DRAM DPSD4MX32RY5 PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP

Contextual Info: DENSE-PAC MICROSYSTEMS 128 Megabit C M O S D D R SDRAM DPDD32MX4RLAY5 DPDD32MX4RSÍW5 ADVANCED INFORMATION DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The128M egabit Double Data Rale Synchronous DRAM isam em ber ofth isfam ilyw h ich utilizesthenew and innovative space savingTSOP

AL437

Abstract: L97c L235C L103T L41C L140C L94C l165c L239C L43C
Contextual Info: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC November 2003 Preliminary Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two

Contextual Info: 128 Megabit CMOS DDR SDRAM DPDD32MX4RSAY5 PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The is a Dense-Pac core technology used to create 3-Dimensional solid state memory arrays. The DPDD32MX4RSAY5 is a member of the LP-Stack family which applies the Dense-Pac technology to create a 128Mb

DPSD64MX8WKY5

Contextual Info: 512 Megabit Synchronous DRAM DPSD64MX8WKY5 DESCRIPTION: The LP-Stack series is a family of interchangeable memory modules. The 512 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are constructed with 32 Meg x 8 SDRAMs.

DPSD8MX32RY5

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD8MX32RY5 PIN-OUT DIAGRAM DESCRIPTION: This 128 Megabit LP-Stack module, DPSD8MX32RY5, has been designed to allow 32 Output Data lines utilizing two 4 Meg x16 SDRAM TSOP monolithics. Utilizing this LP-Stack™ family

L130C

Abstract: L74c l31c l97c l65c A311TC l146c l48c L202C L235C
Contextual Info: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC May 2009 Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two

sht22

Abstract: SHT12 5BE1 EL114 6nc3 SHT20 RAM128KX8 SHT13 VG-468 57BE2
Contextual Info: 5 EBSA-110 SHEET SIG 4 Schematic PREFIXES 3 2 BAN#=EBSA-110 REV#=REVB Directory 1 - STRONGARM SHT20, C 1 - Schematic sht 2 - Block sht 3 CPU_, sht 4 - Debug sht 5 - SSRAM sht 6 BUF_, IO_ Address sht 7 MUX_, SIM_ DRAM sht 8 CTA_, CTB_ Control sht 9 CTA_, CTB_

16mx4

Abstract: DPAC Technologies
Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit CMOS 3.3V EDO DRAM DP3ED32MX4RKY5 / DP3ED32MX4R8KY5 DESCRIPTION: The 64 Megabit based LP-Stack modules have been designed to fit in the same footprint as the 32 Meg x 4 DRAM TSOP monolithic. This allows the memory board designer