3.2V Search Results

Contextual Info: APT50GT120B2R G APT50GT120LR(G) 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.

Contextual Info: I S 6 2 L V 1 2 8 1 6 ' L "m 128K x 16 CMOS STATIC RAM WITH 2.5V-3.2V SUPPLY FEATURES • High-speed access time: 70,100, and 120 ns • CMOS low power operation — 120 mW typical operating — 6 jiW (typical) CMOS standby • TTL compatible interface levels

Regulated Power Supply Schematic Diagram

Abstract: CHP1230-PM CHP1230-PM-0000 CHP1230-PM-000T
Contextual Info: CHP1230-PM TM 1.75 to 1.78 GHz 3.2V, 28.0 dBm, Korea PCS InGaP HBT Module Advanced Product Information April 2000 1 of 4 Features ❏ InGaP HBT Technology ❏ 6mm Square, 50 Ohm Power Module ❏ Single Positive Supply ❏ Operation as Low as 3.2V ❏ 35% Linear Power Added Efficiency

L9907N

Abstract: L9907ND SO20L headlight motor
Contextual Info: L9907N MOTOR BRIDGE FOR HEADLIGHT ADJUSTMENT FULL BRIDGE OUTPUT CONFIGURATION WITH LOW SATURATION VOLTAGE LESS THAN 3.2V AT OUTPUT CURRENT 0.7A OPERATING SUPPLY VOLTAGE RANGE 7V TO 18V. SUPPLY OVERVOLTAGE UP TO 50V HIGH POSITIONING PRECISION AND HIGH NOISE IMMUNITY DUE TO TRANSFER

Contextual Info: RT9177/A Preliminary Ultra-Low-Noise 200mA/500mA LDO Regulator General Description Features The RT9177/A is a 200mA/500mA low dropout and low noise micro-power regulator suitable for portable RF applications. The output voltage accuracy is within ±2% and range from 2.4V to 3.2V in 100mV increments could

Contextual Info: RT9177/A Preliminary Ultra-Low-Noise 200mA/500mA LDO Regulator General Description Features The RT9177/A is a 200mA/500mA low dropout and low noise micro-power regulator suitable for portable RF applications. The output voltage accuracy is within ±2% and range from 2.4V to 3.2V in 100mV increments could

IXBF20N300

Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

IXYH82N120C3

Abstract: DS100335
Contextual Info: Advance Technical Information IXYH82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

cxd1135

Abstract: Sony CXD1135 SM6841 sony cxd1125 0W16 cxd1130 SM5841BS CXD1125 SM5841AS il127
Contextual Info: SM5841A/B QJPC 7*4 NIPPON PRECISION CIRCUITS INC. SM5841A/B tè ,NPC tffà É K $|§& L t z ^ 1 ¥~~ h CMOS 'J9 )Vy 4 to p a to SM5841A/B fi, y 7 ^ fcflUE L tz T 4 V 9 )V* - T 4 t W T4 > rffilè<Ditfe. rW itjrjV'T'tx.y V 7 h ^ jt.- h ^ lasflE 3.2V) -ci>i&i^^'nrt^’ei-o

7k67

Abstract: 4LR61
Contextual Info: DURACELI. SIZE 7K67 Alkaline Manganese Dioxide Battery 4LR61 SPECIFICATIONS 9.16 mm Max. 889 mm Min. Min. No Load Voltage 6.2V æ n T - - it1 I |J 9.8 mm Max. 9 6 mm Min. à t h Rated Capacity 500mAh on 1k ß to 3.2V Min. Life 25Hrs on

bv 038-5193.0

Abstract: BV 038-5081.0 F EI38 038-5190-0 2x15 038-5049.0 BV 038-5216.0 F 038-5351.0 en61558 E113449
Contextual Info: LAMINATED TRANSFORMERS Type EI38 / 13.6 - 3.2VA AGENCY APPROVALS 9.20 1 038-5187.0 1/3* 9 / 356 13.95 1 038-5190.0 1/3* 3. EN61558 230 12 / 267 17.80 1 038-5193.0 1/3* 230 15 / 214 22.20 1 038-5196.0 1/3* 230 18 / 178 27.00 1 038-5199.0 1/3* 230 24 / 134 35.00

Contextual Info: Micropower Step-Up/Step-Down Fixed 3.3 V, 5 V, 12 V, Adjustable High Frequency Switching Regulator ADP3000 FEATURES SET 1.245V REFERENCE DRIVER COMPARATOR ADP3000 R2 GND SW2 00122-001 R1 SENSE Figure 1. VIN 2V TO 3.2V 6.8µH 100µF 10V IN5817 3.3V 180mA 120V

GAL-5

Contextual Info: PBL 4032001 05 January PBL 403 05 Multiband GSM Power Amplifier Description. Key features. The PBL 403 05 is a dual line-up GaAs MMIC power amplifier intended for use in multiband GSM terminals. Powered of a 3.2V supply it delivers more than 34.5 dBm output power at GSM900 and more than 31.5 dBm output power at DCS1800 or

4TPB100M

Abstract: GMK325BJ225MN LT1934 LT1934-1 MBR0540 LCFZ
Contextual Info: LT1934/LT1934-1 Micropower Step-Down Switching Regulators in ThinSOT and DFN U FEATURES DESCRIPTIO • Wide Input Voltage Range: 3.2V to 34V Micropower Operation: IQ = 12µA 5V at 250mA from 6.5V to 34V Input LT1934 5V at 60mA from 6.5V to 34V Input (LT1934-1)

g4 pc 50 w

Abstract: G2 - 395
Contextual Info: Advance Technical Information MMIX4B12N300 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor C2 C1 G1 Electrically Isolated Tab VCES = 3000V IC90 = 12A VCE(sat) ≤ 3.2V G2 E2C4 E1C3 G4 G3 C2 G2 E2C4 E3E4 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions

IXBK55N300

Abstract: IXBX 55N300 IXBX55N300
Contextual Info: IXBK55N300 IXBX55N300 High Voltage, High Gain BiMOSFETTM VCES IC110 = 3000V = 55A ≤ 3.2V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: Preliminary Technical Information IXGF20N300 High Voltage IGBT VCES = 3000V = 22A IC25 VCE sat ≤ 3.2V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000

DCS1800

Abstract: MAX2216 MAX2216EBV PCS1900 GSM900 maxim analog design guide 12 3RD
Contextual Info: 19-2038; Rev 0; 5/01 KIT ATION EVALU E L B A IL AVA Miniature Chip-Scale GSM900/DCS1800/PCS1900 Power Amplifier Features ♦ Miniature Chip-Scale Package UCSP : 2.5mm ✕ 3.0mm ♦ +34.5dBm Output Power (VCC ≥ +3.2V) ♦ Low Voltage Operation—Down to 2.5V

Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V IXBH20N300 IXBT20N300 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR

Contextual Info: APT50GT120B2R G APT50GT120LR(G) 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.

Contextual Info: Advance Technical Information IXBT20N300HV High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: TS2023 1A Single Channel USB Power Switch SOT-25 Pin Definition: 1. CTL 2. Ground 3. FLG 4. Input 5. Output General Description The TS2023 is integrated 85mΩ high-side power switch for self-powered and bus-powered Universal Serial Bus USB applications. This switch operates with input ranging from 3.2V to 6.5V, making it ideal for 5V system.

5458

Contextual Info: PECLF Series 14 Pin DIP PECL Frequency 10k: 5.000 Mhz. To 110 Mhz. 10kH: 50.000 MHz. To 200 MHz. 10E, 100 E: 100 Mhz. To 400 MHz. ‘0’ = +3.57 Vdc Max. , ‘1’ = +4.22 Vdc Min. 50% ± 5% 10kH: 800 ps Typ. 10E: 500ps Typ. 100E: 500ps Typ. 50 Ω to +3.2V or 390 Ω to Vee

TSOT23-5

Abstract: CAT808 MO-193 Catalyst Semiconductor 25 CATALYST SEMICONDUCTOR Voltage Detector SOT-89 marking TB MARKING SOT-89
Contextual Info: CAT808 Low-Power Precision Voltage Detector FEATURES DESCRIPTION „ Ultra Low Current Consumption 2.4µA The CAT808 is a high-precision voltage detector designed for monitoring single cell and multi-cell batteries. Voltage detection thresholds between 2.0V and 3.2V are