IXGF20N300 Search Results

IXGF20N300 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXGF20N300		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 22A 100W I4-PAK	Original	PDF		5

IXGF20N300 Price and Stock

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IXYS Corporation IXGF20N300 IGBT 3000V 22A ISOPLUS I4-PAC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGF20N300	Tube			300	1 - 10 - 100 - 1000 $35.43 10000 $35.43	Buy Now
TME	IXGF20N300				1	1 $68.18 10 $61.34 100 $54.27 1000 $54.27 10000 $54.27	Get Quote
Littelfuse Inc IXGF20N300 Discigbt Npt-Very Hi Voltage I4-Pak Iso+/ Tube \|Littelfuse IXGF20N300
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXGF20N300	Bulk			300	1 - 10 - 100 - 1000 - 10000 -	Buy Now

IXGF20N300 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information IXGF20N300 High Voltage IGBT VCES = 3000V = 22A IC25 VCE sat ≤ 3.2V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000	Original	IXGF20N300 20N250 4P-P528 2-04-09-A	PDF
Contextual Info: High Voltage IGBT VCES = 3000V IC25 = 22A VCE sat ≤ 3.2V IXGF20N300 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES	Original	IXGF20N300 20N250 4P-P528 11-18-09-B	PDF
Contextual Info: High Voltage IGBT IXGF20N300 VCES = 3000V = 22A IC25 VCE sat ≤ 3.2V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES	Original	IXGF20N300 20N250 4P-P528 11-18-09-B	PDF
250a 4p Contextual Info: High Voltage IGBT IXGF20N300 VCES = 3000V = 22A IC25 VCE sat ≤ 3.2V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES	Original	IXGF20N300 20N250 4P-P528 2-04-09-A 250a 4p	PDF
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250	PDF