2SK3385-Z
Abstract: 2SK3385
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3385 TO-251 2SK3385-Z TO-252 designed for high current switching applications.
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2SK3385-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET ★ DESCRIPTION ORDERING INFORMATION The 2SK3385 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3385 TO-251 MP-3 2SK3385-Z TO-252 (MP-3Z) designed for high current switching applications.
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2SK3385-Z
Abstract: 2SK3385 D1447
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
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2SK3385-Z
Abstract: M2SK3385 2SK3385
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3385 TO-251 MP-3 2SK3385-Z TO-252 (MP-3Z) designed for high current switching applications.
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2SK3385-Z
Abstract: 2SK3385 US79
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE
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Contextual Info: SMD Type Product specification 2SK3385 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss : Ciss = 1500 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 MAX. VGS = 4.0 V, ID = 15 A
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15A-31
Abstract: 2SK3385 2sk338
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3385 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss : Ciss = 1500 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 +0.15
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pa1556ah
Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Contextual Info: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET
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o-251/-252o-220/-262sc-96sc-95+12ot-23d10702ejav0pf00pa1556ahpa1501hnec pa1501hpa1556apa1550hpa1556pa1522hupa1712pa1560h2sk3326
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2sk4145
Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
Contextual Info: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device: Listed by configuration single/dual and polarity (N or P) Sorted by voltage first, followed by resistance and current
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sc-62/sot-89sc-84sc-95/sot-6sc-96+16ot-23ot-23fo-252zo-252zko-252zpo-263zj2sk41452sk4075upa27242sk42122sk4213upa2804t1l2sk4145-s192sk4202upa22112sk3919
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2sk2500
Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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c11178jjcv0if0012c11178jjcv0ifmil-hdbk-217milmil10100+11mil-hdbk-217fit2sk2500upc1037haupc648c2sk927nec 2sk2500upd5201gupa64haupd6360c2sh24n13t1
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2sk4145
Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080
Contextual Info: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device: Listed by configuration single/dual and polarity (N or P)
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sc-62/sot-89sc-84sc-95/sot-6sc-96+16ot-23ot-23fo-252zo-252zko-252zpo-263zj2sk41452sk40752sk4213upa2591t1h2sk4202upa2804t1lupa2727t1amosfet 2sk4145upa1914te-t12sk4080
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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2sk25002sk1543upd16861gsnec 2sk2500+6upa1559htransistor nec 2sk25002sc4496amc10087f12sa733aupd16861
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EEFL
Abstract: 2sk4075 2SK4075-ZK TO-252 MOSFET 2sk4077 2SK3385 nec 78 2SK4077-ZK 2sk*4075 2sk4184
Contextual Info: MOSFET for LCD Backlight Inverters Multi CCFL and EEFL have been applied in recent years for LCD TV’s circuitry cost reduction purpose. In conjunction of this development trend, NEC Electronics offers low voltage MOSFET with optimal low on-state resistance that comes with high
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MPA2733GR
Abstract: MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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o-263o-252mpa672tmpa675t+16mpa677tbmpa678tbmpa679tbm8e0710jd18669jj3v0sgd18669jj3v0sg003mpa2733grmpa27332sk4075mosfet 8pinnec power mosfet bare die np2sk4213mpa602t2sj647m2skxxxxnp100p04pdg
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R2A11301FT
Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
Contextual Info: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV
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/533mhzbga-832bga-472bga-429+12bga-720bga-653r2a11301ftsh7766r2a25108kfp2sc5664powervr sgx530powervr sgx540car ecu wiring system service manualr2a25104kfpv850e2 fx4dj4 renesas
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transistor NEC 2SK2500
Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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SC-95
Abstract: 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A
Contextual Info: PowerMOSFET Product Overview April 2007 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device: Listed by configuration single/dual and polarity (N or P) Sorted by voltage first, followed by resistance and current
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PD166104GS
Abstract: PA1915TE mp sot 23 uPD166007 UMOS-4 np np88n04kug NP180N04TUG 2sj598 PC78L05T PD166005GR
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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M2SK3295
Abstract: M2SK3354 2SK2499 2SK3296 M2SK3355 umos varistor 2754 2SK3355 PA1700A PA1707
Contextual Info: LINEUP POWER MOSFET SERIES UMOS II Kazuhiro Yamada UMOS I process Planar process G S i UMOS II process G S S G n+ n+ n+ p p p n- n- n- n+ n+ i D i D n+ D Fig. 1 Cross Sectional View of Cell Structure Ron Ω N channel VDSS: 60 V Package: TO-220 RDS(on) indicates the TYP value
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mc10087f1
Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Contextual Info: 1/89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.
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N116922
Abstract: M2SK3377 M2SK3385 44358 2SK33 m2sk3357 M2SK3366 M2SK3355 m04948 SPICE2G6
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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2SC5664
Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
Contextual Info: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation
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2SK3385
Abstract: 2SK3385-Z
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK3385-Z
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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