2SK338 Search Results

dsi 3550

Abstract: dr 25 diode
Contextual Info: T E N T A T IV E T O S H I B A 2SK3389 T OS HI BA F I E L D E F F E C T TRANSI STOR S I L I C O N N CHANNEL MOS T Y P E U - M 0 S 1 I 2 S K 3 3 8 9 INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. _ UNIT:mm M1

D144

Abstract: 2SK3386 2SK3386-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 2SK3386-Z TO-252 designed for high current switching applications.

K3389

Abstract: k338 2SK3389
Contextual Info: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)

k338

Abstract: 2SK3389
Contextual Info: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3402 SWITCHING N-CHANNEL POWER MOS FET ★ DESCRIPTION ORDERING INFORMATION The 2SK3402 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 MP-3 2SK3386-Z TO-252 (MP-3Z) designed for high current switching applications.

Contextual Info: 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4 V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)

2SK3389

Contextual Info: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) · High forward transfer admittance: |Yfs| = 70 S (typ.)

2SK3385-Z

Abstract: 2SK3385
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3385 TO-251 2SK3385-Z TO-252 designed for high current switching applications.

2SK3387

Abstract: K3387
Contextual Info: 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)

2SK3388

Contextual Info: 2SK3388 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3388 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs| = 20 S (標準)

2SK3386

Abstract: 2SK3386-Z D1447
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES

2SK3288

Abstract: 2SK3380 Hitachi DSA00333
Contextual Info: 2SK3380 Silicon N Channel MOS FET High Speed Switching ADE-208-806 Z 1st.Edition. June 1999 Features • Low on-resistance R DS =1.26 Ω typ. (V GS = 10 V , ID = 150 mA) R DS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. Outline SPAK

Contextual Info: 2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3388 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 2SK3386-Z TO-252 designed for high current switching applications.

2SK3389

Abstract: k338
Contextual Info: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)

M2SK3386

Abstract: 2SK3386 2SK3386-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 MP-3 2SK3386-Z TO-252 (MP-3Z) designed for high current switching applications.

2SK3288

Abstract: 2SK3380 DSA003644
Contextual Info: 2SK3380 Silicon N Channel MOS FET High Speed Switching ADE-208-806 Z 1st.Edition. June 1999 Features • Low on-resistance R DS =1.26 typ. (V GS = 10 V , ID = 150 mA) R DS = 2.8 typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. Outline SPAK D 12 3

K3387

Abstract: 2SK3387
Contextual Info: 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)

Contextual Info: SMD Type Product specification 2SK3386 TO-252 MAX. VGS = 4.0 V, ID = 17A Low Ciss : Ciss = 2100 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max 3.80 RDS(on)2 = 36 m +0.8 0.50-0.7 +0.15 5.55-0.15 MAX. (VGS = 10 V, ID = 17A)

2SK3385-Z

Abstract: 2SK3385 D1447
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES

3773 P

Abstract: 3773P 2SK338 transistor cc 5551 EK06 F530 24si
Contextual Info: M O S Field E ffe c t P o w e r T ra n s is to r 2SK338 m i * jb e m B u i. j i m m High V oltage, High Speed, High C u rre n t Sw itching Industrial Use 2 S K 3 3 8 i i , B l i ± ^ N ^ - - v ^ ; H i i ^ ° ’7 - M O S F E T T , X 'f 'v f - > ti-Mm /P A C K A G E DIM ENSIO NS

"MARKING CODE S1" toshiba

Contextual Info: 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET ★ DESCRIPTION ORDERING INFORMATION The 2SK3386 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 MP-3 2SK3386-Z TO-252 (MP-3Z) designed for high current switching applications.

2SK3385-Z

Abstract: M2SK3385 2SK3385
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3385 TO-251 MP-3 2SK3385-Z TO-252 (MP-3Z) designed for high current switching applications.