2SK333 Search Results

Contextual Info: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings

230mH

Contextual Info: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings

mosfet 20a 300v

Contextual Info: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings

2SK3332

Abstract: FM20 0V2006
Contextual Info: 2SK3332 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 150 V V BR DSS I D = 100µA, VGS = 0V VGS = +20V, –10V I DSS 100 µA VDS = 150V, VGS = 0V 2.0 V VDS = 10V, I D = 250µA S VDS = 10V, I D = 6A

Contextual Info: 2SK3335 N- Channel Silicon MOS FET Very High-Speed Switching TENTATIVE Features and Applications • Low ON-state resistance. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current (Pulse)

2SK3332

Abstract: FM20
Contextual Info: 2SK3332 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 150 V V BR DSS I D = 100µA, VGS = 0V VGS = +20V, –10V I DSS 100 µA VDS = 150V, VGS = 0V 2.0 V VDS = 10V, I D = 250µA S VDS = 10V, I D = 6A

2SK3338-01

Abstract: L356
Contextual Info: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2sk3337-01

Abstract: Silicon MOSFET 1000V
Contextual Info: 2SK3337-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

L356

Contextual Info: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2SK3339-01

Abstract: 230mH
Contextual Info: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2SK3337-01

Abstract: N-Channel mosfet 600v 7A mosfet 600V 7A N-CHANNEL
Contextual Info: 2SK3337-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings

Contextual Info: 2SK3337-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings

2SK3335

Abstract: 256pF
Contextual Info: 注文コード No. N 7 2 1 6 2SK3335 No. N 7 2 1 6 50902 新 2SK3335 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

2SK3337

Abstract: 2SK3337-01 mosfet 600V 7A N-CHANNEL L173
Contextual Info: 2SK3337-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2SK3335

Contextual Info: Ordering number : ENN7216 2SK3335 N-Channel Silicon MOSFET 2SK3335 Ultrahigh-Speed Switching Applications Features Low ON-resistance. 4V drive. unit : mm 2083B [2SK3335] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain

ns102

Contextual Info: 2SK3337-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings

2SK332

Abstract: 2SC4072 2sk333 2sk1806 2sk377 j 2sc3064
Contextual Info: SA* VO D P Dual P a c k a g e S e r i e s T h e S a n y o DP s e r i e s i n c l u d e t r an s is t or s , FETs for LF amp use as well as t r a n s i st o rs , F E Ts for HF amp use. B e c a u s e of t h e ir u n i q u e p a c k a g e design, they are c a p a b l e of b e i n g m o u n t e d e a s i l y and the c h a r a c t e r i s t i c s can

2sk77

Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
Contextual Info: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

TRANSISTOR 187

Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
Contextual Info: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60