2SK1690 Search Results

S2090p

Contextual Info: 2SK1690 AP A d va n ce d P e rfo rm a n c e Series 2093 2090 V dss = 4 5 0 V N Channel Power MOSFET •E’4 2 2 3 F e a tu re s • Low ON resistance. • Very high-speed sw itching. A b so lu te M axim um R atin g s a tT a = 25°C D rain to Source Voltage

2SK1690

Contextual Info: 2SK1690 2093 2090 AP A d va n ce d P e rfo rm a n c e Series V d ss = 4 5 0 V INI Channel Power MOSFET 4223 F e a tu re s •Low ON resistance. • Very high-speed switching. A b so lu te M ax im u m R a tin g s a t T a = 25°C D rain to Source Voltage

Contextual Info: 2SK1690 Ordering number : EN4223B SANYO Semiconductors DATA SHEET 2SK1690 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C

2SK1690

Contextual Info: Ordering number:EN4223 N-Channel Silicon MOSFET 2SK1690 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. unit:mm 2093A [2SK1690] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 11.0 20.9 1.2 9.4 0.8 0.4 2

N4223

Abstract: 2SK1690
Contextual Info: O rdering num ber: E N 4223 s/mm f i _ 2SK1690 No.4223 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. A b s o lu te M ax im u m R a tin g s at Ta = 25°C D rain to Source Voltage

2SK1690

Abstract: ITR01798 ITR01799 ITR01800 ITR01801
Contextual Info: 2SK1690 Ordering number : EN4223B SANYO Semiconductors DATA SHEET 2SK1690 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

on line ups circuit diagrams

Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm

TN6Q04

Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
Contextual Info: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15

2SK1925

Contextual Info: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5

2SK3099

Abstract: 2SK2434 2SK2617 2SJ522 2SK3092 2SK3093 2SK3094 2SK3095 2SK3096 2SK3097
Contextual Info: SAfiYO L a r g e - s i g n a l Power M0SFETs 4 The Sanyo J-MOS s e r i e s u t i l i z e s Sanyo’ s own f in e f a b r ic a t io n process fo r power d evices to develop an e n tir e s e r ie s of u ltr a h ig h perform ance power d e v ic e s cap ab le o f high v o lta g e , high speed and larg e cu rren t operation.

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SJ32C

Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
Contextual Info: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

2SK1731

Abstract: 2SK2637 2SK1871 2SK2626 2sk2636 2SK2438 2SK2153 2sk2406 2SK1474 2SK1920
Contextual Info: Continued from previous page Absolute maximum ratings Applications M VGSS Id V (A) (W) VDSS Electrical characteristics (Ta • 25 C ) RDSCmO @ ID PD Teh (1C) VGSS (off) (V) ID ■V6S ves (V) & |Yfs| 0 VDS ' ID slif Type Mo. Package type (A) 2SK1474 TP Ultrahigh-speed switching

TN6Q04

Abstract: 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS
Contextual Info: Large Signal Packages Selector Guide CONTENTS ŝQuick Selection Guide P-channel New 2 •TO-3JML Package 14 ŝQuick Selection Guide N-channel New 3~5 ■TO-3PBL Package 14 6,7 ■TO-3PB Package 14 8.9 ■TO-3PML Package 14 15 ŝSwitching Power Supply ŝMotor Drive Use

TT2192

Abstract: sma4212 2SJ519 2sc5681 2SK1871 2SC5044 2SK3666 2sc6091 2SC5688 EC4K01KF
Contextual Info: Ordering number : E I 0 0 9 2 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.