2SK1439 Search Results

2052B

Contextual Info: 2SK1439 2052B A P A dvanced Perfo rm ance Series Voss = 4 5 0 V N Channel Power M O S F E T F eatures • Low ON-state resistance. • Very high-speed switching. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage VDSS Gate to Source Voltage

2SK1439

Abstract: 34423
Contextual Info: O rdering n u m b e r:E N 3 4 4 2 2SK1439 No. 3442 N-Channel MOS Silicon FET SAÈÊYO i Very High-Speed Switching Applications F eatu res • Low ON-state resistance. • Very high-speed switching. A bsolute M aximum R atings at Ta=25°C Drain to Source Voltage

Contextual Info: 2SK1439 2052B A P A d v a n c e d P e r f o r m a n c e S e r ie s V dss — 4 5 0 V N Channel Power M OSFET 3442 Features • Low ON-state resistance. • Very high-speed switching. A bsolute M axim um R atings at T a= 25°C Drain to Source Voltage

34424

Abstract: 2SK1439 no3442 EN3442
Contextual Info: Ordering number:EN3442 N-Channel Silicon MOSFET 2SK1439 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. unit:mm 2052C [2SK1439] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7 1.3 14.0 5.6 1.2

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

on line ups circuit diagrams

Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm

TN6Q04

Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
Contextual Info: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15

2SK1925

Contextual Info: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5

2SK3099

Abstract: 2SK2434 2SK2617 2SJ522 2SK3092 2SK3093 2SK3094 2SK3095 2SK3096 2SK3097
Contextual Info: SAfiYO L a r g e - s i g n a l Power M0SFETs 4 The Sanyo J-MOS s e r i e s u t i l i z e s Sanyo’ s own f in e f a b r ic a t io n process fo r power d evices to develop an e n tir e s e r ie s of u ltr a h ig h perform ance power d e v ic e s cap ab le o f high v o lta g e , high speed and larg e cu rren t operation.

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SJ32C

Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
Contextual Info: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis

2SK1461

Abstract: 2SK1435 2SK1436 2SK1437 2SK1438 2SK1439 2SK1440 2SK1441 2SK1442 2SK1443
Contextual Info: - 104 - f W % £ m m & m í 36 $ ft t I V* h' V fe Vg s * X » * (V) * (A) 3 * * P d /P c h (W) Ig s s (max) (A) Vg s (V) (rain) (max) V d s (A) (A) (V) (min) (V) (Ta=25°0) te 4$ (max) V d s (V) (V) g m (min) (S) ]¡D (A) Vd s (V) Id (A) 2SK1435 HS SW

Contextual Info: • AP Series Lineup H-ll Series Existing type VDSS = 250V, N-channel Absolute maximum ratings atTa = 25°C Type No. Package Vi«« m m 2SK2167 2SK2168 2SK2321 +20 <n»' TO-220 MM Cfe» (S) W typ 8.0/12.0 0.4 37 3.5/5.0 0.9 80 3.5 +30 4.0 30 0.5/0.7 4.0

2sk3436

Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。

2SK1411

Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Contextual Info: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0