2SJ610 Search Results

2SJ610

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. • Low leakage current: IDSS = −100 A (VDS = −250 V) • Enhancement mode: Vth = −1.5 to −3.5 V (VDS = 10 V, ID = 1 mA)

2SJ610

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.)

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type -MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 • Low leakage current: IDSS = −100 A (VDS = −250 V) • Enhancement mode: Vth = −1.5 to −3.5 V (VDS = 10 V, ID = 1 mA)

2SJ610

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.)

2SJ610

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) · High forward transfer admittance: |Yfs| = 18 S (typ.)

2SJ610

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.)

2SJ610

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SJ610 High Speed Switching, High Current Applications Switching Regulator, DC-DC Converter and Motor Drive Applications Features • • • • Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.)

2SJ610

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 • High forward transfer admittance: |Yfs| = 18 S (typ.) • Low leakage current: IDSS = −100 A (VDS = −250 V)

2SJ610

Contextual Info: 2SJ610 東芝電界効果トランジスタ シリコンPチャネルMOS形 π-MOSV 2SJ610 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 単位: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 • オン抵抗が低い。

2SJ610

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.)

2SJ610

Contextual Info: 2SJ610 東芝電界効果トランジスタ シリコンPチャネルMOS形 π-MOSV 2SJ610 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 単位: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 • オン抵抗が低い。

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type F-MOSV 2SJ610 High Speed Switching, High Current Applications Switching Regulator, DC-DC Converter and Motor Drive Applications Features • · · · Low drain-source ON resistance: RDS (ON) = 1.85 W (typ.)

Contextual Info: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.)

circuit diagram of luminous inverter

Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
Contextual Info: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances

Toshiba TMPA8873

Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Contextual Info: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

MOSFET TOSHIBA 2SK2917

Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
Contextual Info: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

TA1343NG

Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
Contextual Info: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

tb6584

Abstract: TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram
Contextual Info: 2008-9 SYSTEM CATALOG Home Appliances s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/e n g Air Conditioners Induction Rice Cookers C O N T E N T S Characteristics of Motor Control Devices. 3 Dishwashers