2SD169 Search Results

Contextual Info: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage

Solenoid Driver 2a

Abstract: 2SB1151 2SD1691
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1151 DESCRIPTION •High Collector Current -IC= -5A ·Low Collector Saturation Voltage : VCE sat = -0.3V(Max.)@ IC= -2A ·Complement to Type 2SD1691 APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid

2SD1691

Abstract: 2SB1151
Contextual Info: PRELIMINARY PRODUCT INFORMATION SILICON POWER TRANSISTOR 2SD1691 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A

2SB1149

Abstract: 2SD1692
Contextual Info: PRELIMINARY PRODUCT INFORMATION SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FEATURES PACKAGE DRAWING (UNIT: mm) • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat)

Contextual Info: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage

2SD1694

Contextual Info: NPN SILICON POWER TRANSISTOR 2SD1694 D E S C R IP T IO N The 2SD1694 is High h FE and Low V CE sat transistor. P A C K A G E D IM E N S IO N S It is suitable for use to operate from IC without predriver, such as in millimeters (inches) 8.5 MAX. (0.334 MAX.)

2SB1149

Abstract: 2SD1692
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FEATURES PACKAGE DRAWING (UNIT: mm) • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat) • Large power dissipation TO-126 type power transistor

8AEL

Contextual Info: SILICO N TR A N SISTO R 2SD1699 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLO DESCRIPTION The 2SD1699 is NPN silicon epitaxial darlington transistor designed for pulse motor, printer driver, solenoid driver. Circuits. FEA TU R ES PACKAGE DIMENSIONS * H'9h 0 0 Currcm 9ain'

Contextual Info: DATA SHEET r NEC S ILIC O N TR A N SISTO R 2SD1699 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD D E S C R IP T IO N T h e 2 S D 1 6 9 9 is N P N silic o n e p ita xia l d a r lin g t o n t r a n sisto r d e sig n e d f o r p uise m o to r, p rin te r d rive r, so le n o id drive r.

2SD1691

Abstract: 2SB1151
Contextual Info: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage

Contextual Info: ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 OC

2SB1151

Abstract: 2SD1691
Contextual Info: Inchange Semiconductor Product Specification 2SB1151 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1691 ・Low saturation voltage ・Large current ・High total power dissipation:PT=1.3W ・Large current capability and wide SOA

2SC2720

Abstract: 2SC2720-A 2SD772 nec 2SC3S31 2SC3098 2SC3358 2SC3531 2SC1730 nec 2sd772 2SC3110
Contextual Info: - M £ tt € Manuf. Type No. 2SC 3786 / H 2SC 3 7 8 7 / " = 2SC 3788 = ft ft 2SC 3 7 8 9 ^ = 2SC 3790 = B * SANYO TOSHIBA 'S NEC B tL HITACHI ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — b. ROHM 2MJ1Z7Ö 2SD1692 $ * 173 2SC1953 2SC3620 2SC2682 2SC2258

2SB1151 y

Abstract: 2SB1151 2SB1151L 2SD1691 2sb115 2SB1151-LAZ
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ FEATURES *High Power Dissipation *Complementary to 2SD1691 *Pb-free plating product number: 2SB1151L „ ORDERING INFORMATION Ordering Number Normal

d 1698

Abstract: d1698 2SD1698 motor printer Transistor 2SD1698 dumper
Contextual Info: NPN SILICON TRANSISTOR 2SD1698 D E S C R IP T IO N The 2S D 1698 is NPN silicon epitaxial darlington transistor PAC KAG E D IM E N S IO N S designed for pulse m otor, printer driver, solenoid driver. FEATURES • High DC Current gain. • Includes a dumper diode at E-C.

2SB1151

Abstract: 2SD1691
Contextual Info: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage

Contextual Info: 2SD1695 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)35 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k h(FE) Max. Current gain.30k

2SD1691

Abstract: 2SD*1691 2SB1151 2sb115
Contextual Info: SavantIC Semiconductor Product Specification 2SD1691 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SB1151 ·Low saturation voltage ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS

2SD1691

Abstract: 2SD1691L 2SB1151 TO-220F1 NPN
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-220F1 1 TO-126 1 TO-126C „ ORDERING INFORMATION Ordering Number Lead Free Plating

2SB1151 y

Abstract: 2SB1151-L(AZ)
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ FEATURES *High Power Dissipation *Complementary to 2SD1691 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R

2SB1151

Abstract: 2SD1691
Contextual Info: JMnic Product Specification 2SB1151 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1691 ・Low saturation voltage ・Large current ・High total power dissipation:PT=1.3W ・Large current capability and wide SOA

2SD1698

Abstract: PA33
Contextual Info: T 2— S • 5 /— h* S ilicon T ra n sisto r 2SD1698 «f • ^ Ü « b , 800 m A Î T"iOSihFE? -i ^ 9 h V ÿ 'i "7* O I mm 5,2 MAX, ( r- > j > h >^m) A M të T "t„ O Î Ê V c E ( s a t ) 'f " i _ „ (T a - 25 °C) n s w& -t fë te # ÿL -7 9 ■ ^ - x f î l J S Œ

471 kck

Abstract: transistor ajw UV 471 2SD1697
Contextual Info: 7 s— S • 2/ — h Silicon Transistor r 2SD1697 N P N ib 7 + ‘> 7 ; H - > lJ 3 i& m fo m tiw ffim n iW i t 800 a ^ m 'C ’To O ffi;V c E (sa t 'f"i~ « * » * :£ » 'i > ? h K 7 >f 7 " -¥ • a . • - t - x F l lE ,y p . SO aE # r V CBO 100 V V CEO

IH02

Abstract: ts 4141 TRANSISTOR 2SB1151 2SD1691 T460
Contextual Info: s<*7— S ilico n P o w e r T ra n s isto r 2SD1691 N P N ifc NPN Silicon Epitaxial Transistor Audio Frequency Amplifier, Medium Speed Switching Industrial Use #£/FEA TU RES ftWm / P A C K A G E DIMENSIONS O V E iiiL 'ff <, L t > ' Unit : mm i n ; V c ; K ( s a i ) ' t ’' i _ ,