2SD1419 DD Search Results

2SB1026

Abstract: 2SD1418 2SD1419 2sB102 DSA003638
Contextual Info: 2SD1419 Silicon NPN Epitaxial ADE-208-1150 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1026 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1419 Absolute Maximum Ratings (Ta = 25°C)

2SB1026

Abstract: 2SD1418 2SD1419 Hitachi DSA00396
Contextual Info: 2SD1419 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1026 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector Flange 2SD1419 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

Contextual Info: 2SD1419 Silicon NPN Epitaxial HITACHI Application • Low frequency power amplifier • Complementary pair with 2SB 1026 Outline UPAK 1 1. 2. 3. 4. Base Collector Emitter Collector Flange 929 2SD1419 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2SD1419 dd

Abstract: Hitachi DSA002756
Contextual Info: 2SD1419 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1026 Outline 2SD1419 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage

SMD TRANSISTOR MARKING Dd

Abstract: SMD TRANSISTOR MARKING DE MARKING SMD NPN TRANSISTOR BR SMD TRANSISTOR MARKING BR 2SD1419
Contextual Info: Transistors SMD Type NPN Silicon epitaxial Transistor 2SD1419 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage

Contextual Info: SMD Type Product specification 2SD1419 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5 V Collector current

2SB1026

Abstract: 2SD1418 2SD1419
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SD1407

Abstract: 2SB977 2SB1017 2SD1347 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974
Contextual Info: - 70 - n Ta=25V.*EPteTc=25V m £ *± £ VcBO Vceo (V) (V) Ic(DC) <A> Pc Pc* (HO m iCBO (max) (ub) VcB (V) m (min) w & (max) 14 V'CE (V) (Ta=25°C) ic/I E (A) [*EP[ätypH3 (max) (V) (V) Ic (A) Ib Ca ) 2SB966 BIS LF PA -120 -120 -8 80 -50 -120 60 320 -5 -1

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SB1099

Abstract: 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347 2SB966 2SB967 2SB968 2SB970
Contextual Info: - 70 - m 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB975 2SB976 2SB977 2SB977A 2SB984 *± BIS töT föT HÄ an B föT fö~F töT BM 2SB985 2SB986 n Ta=25V.*EPteTc=25V £ £ VcBO Vceo Ic(DC) Pc (V) (V) <A> (HO Pc* m iCBO (max) (ub) VcB m (min) (V) & w

transistor C5080

Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Contextual Info: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *