2SD1419 DD Search Results

2SB1026

Abstract: 2SD1418 2SD1419 2sB102 DSA003638
Contextual Info: 2SD1419 Silicon NPN Epitaxial ADE-208-1150 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1026 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1419 Absolute Maximum Ratings (Ta = 25°C)

2SD1419 dd

Abstract: Hitachi DSA002756
Contextual Info: 2SD1419 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1026 Outline 2SD1419 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage

SMD TRANSISTOR MARKING Dd

Abstract: SMD TRANSISTOR MARKING DE MARKING SMD NPN TRANSISTOR BR SMD TRANSISTOR MARKING BR 2SD1419
Contextual Info: Transistors SMD Type NPN Silicon epitaxial Transistor 2SD1419 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage

Contextual Info: SMD Type Product specification 2SD1419 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5 V Collector current

2SB1026

Abstract: 2SD1418 2SD1419
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SD1407

Abstract: 2SB977 2SB1017 2SD1347 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974
Contextual Info: - 70 - n Ta=25V.*EPteTc=25V m £ *± £ VcBO Vceo (V) (V) Ic(DC) <A> Pc Pc* (HO m iCBO (max) (ub) VcB (V) m (min) w & (max) 14 V'CE (V) (Ta=25°C) ic/I E (A) [*EP[ätypH3 (max) (V) (V) Ic (A) Ib Ca ) 2SB966 BIS LF PA -120 -120 -8 80 -50 -120 60 320 -5 -1

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SB1099

Abstract: 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347 2SB966 2SB967 2SB968 2SB970
Contextual Info: - 70 - m 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB975 2SB976 2SB977 2SB977A 2SB984 *± BIS töT föT HÄ an B föT fö~F töT BM 2SB985 2SB986 n Ta=25V.*EPteTc=25V £ £ VcBO Vceo Ic(DC) Pc (V) (V) <A> (HO Pc* m iCBO (max) (ub) VcB m (min) (V) & w

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer