2SD1223 Search Results

2SD1223 Datasheets (17)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SD1223	Unknown		Scan	PDF	173.49KB	4
2SD1223	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	88.42KB	2
2SD1223	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	30.68KB	1
2SD1223	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	44.36KB	1
2SD1223	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	33.22KB	1
2SD1223	Unknown	Cross Reference Datasheet	Scan	PDF	41.78KB	1
2SD1223	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	49.05KB	1
2SD1223	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	33.9KB	1
2SD1223	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	32.33KB	1
2SD1223	Toshiba	Silicon NPN transistor for switching applications, hammer drive and pulse motor drive applications power amplifier applications	Scan	PDF	209.47KB	5
2SD1223	Toshiba	TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)(DARLINGTON)	Scan	PDF	209.34KB	5
2SD1223(2-7B1A)	Toshiba	2SD1223 - TRANSISTOR 4000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF	156.01KB	5
2SD1223(2-7B2A)	Toshiba	2SD1223 - TRANSISTOR 4000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF	156.01KB	5
2SD1223(2-7J1A)	Toshiba	2SD1223 - TRANSISTOR 4000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7J1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF	156.01KB	5

2SD1223,L1XGQ(O	Toshiba America Electronic Components	TRANSISTOR NPN DARL PWMOLD	Original	PDF	161.99KB
2SD1223(LB)	Toshiba	TRANS DARLINGTON NPN 80V 4A 3(2-7B1A)	Scan	PDF	209.47KB	5
2SD1223(TE16L1,NQ)	Toshiba	2SD1223 - TRANSISTOR NPN 80V 4A PW MOLD	Original	PDF	156.01KB	5

2SD1223 Price and Stock

Filter by Manufacturer

Toshiba America Electronic Components


Toshiba America Electronic Components 2SD1223(TE16L1,NQ) Trans Darlington NPN 80V 3-Pin PW-Mold T/R - Tape and Reel (Alt: 2SD1223(TE16L1,NQ))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SD1223(TE16L1,NQ)	Tape & Reel		23 Weeks, 1 Days	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark ()	2SD1223(TE16L1,NQ)	Cut Tape	7,334		1	1 $1.52 10 $1.52 100 $0.64 1000 $0.60 10000 $0.57	Buy Now
	2SD1223(TE16L1,NQ)	Tape & Reel	7,334		100	1 - 10 - 100 $0.64 1000 $0.60 10000 $0.57	Buy Now
Avnet Asia	2SD1223(TE16L1,NQ)			28 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	2SD1223(TE16L1,NQ)		3,386			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SD1223 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D1223 Abstract: 2SD1223 a4503 2SB908 Contextual Info: 2SD1223 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SD1223 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)	Original	2sd1223 2sb908 20070701-ja d1223 +1a4503	PDF
D1223 Abstract: 2SB908 2SD1223 Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2sd1223 2sb908 d1223	PDF
Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2sd1223 2sb908	PDF
Contextual Info: TOSHIBA 2SD1223 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 223 SWITCHING APPLICATIONS U n it in mm H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS PO W ER AM PLIFIER APPLICATIONS H ig h D C C urrent G ain : h p E (1) = 2000 (M in .)	OCR Scan	2sd1223 2sb908	PDF
D1223 Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2sd1223 2sb908 d1223	PDF
2SD1223 Abstract: 2SD1223 Q 2SB908 Contextual Info: TO SH IBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2SD1223 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 223 HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : ^FE (1) - 2000 (Min.)	OCR Scan	2sd1223 2sb908 2sd1223 q	PDF
2SD1223 Contextual Info: SILICON NPN EPITAXIAL TYPE 2SD1223 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm S8MAX. FEATURES: . High DC Current Gain : hFE l =2000(Min.) (VCE=2V, Ic=lA) . Low Saturation Voltage : VcE(sat) = l->V(Max.) (Ic=3A)	OCR Scan	2sd1223 2sb908 o-300q 50x50xg8nunt	PDF
Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2sd1223 2sb908	PDF
2SD1223 Abstract: 2SB908 Contextual Info: 2SD1223 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2 S D 1 223 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : ^FE (1) - 2000 (Min.) Low Saturation Voltage : V q ^ (sat) = 1.5 V (Max.)	OCR Scan	2sd1223 2sb908	PDF
Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)	Original	2sd1223 2sb908	PDF
d1223 Abstract: 2SB908 2SD1223 Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2sd1223 2sb908 d1223	PDF
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2SD1223 2 S D 1 223 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS High DC Current Gain : hfE (1) = 2000 (Min.) Low Saturation Voltage : V çe (sat) = 1-5 V (Max.)	OCR Scan	2sd1223 2sb908	PDF
Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2sd1223 2sb908	PDF
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD1223 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) mm mmr v SWITCHING APPLICATIONS. U n it in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 5.2+ 0.2 POWER AMPLIFIER APPLICATIONS. j E E if c lL . ö M AX J 0.6tf-	OCR Scan	2sd1223 2sb908	PDF

3A 100V npn LOW SATURATION VOLTAGE Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD1223 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm &8MAX. FEATURES: . High DC Current Gain : hFE=2000(Min.) (VCE=2V, Ic=lA) . Low Saturation Voltage	OCR Scan	2sd1223 2sb908 3a 100v npn low saturation voltage	PDF
D1223 Abstract: a4503 2SB908 2SD1223 Contextual Info: 2SD1223 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SD1223 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)	Original	2sd1223 2sb908 d1223 a4503	PDF
D1223 Abstract: A4503 2SD1223 2SB908 Contextual Info: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)	Original	2sd1223 2sb908 d1223 a4503	PDF
Contextual Info: SILICON PNP EPITAXIAL TYPE 2SB908 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . High DC Current Gain : hFE l =2000(Min.) (VCE=-2V, IC=-1A) . Low Saturation Voltage : ^CE(sat)“-1•^(Max.) (IC=-3A)	OCR Scan	2sb908 2sd1223 13ase	PDF
b908 Abstract: 2SB908 2SD1223 transistor b908 Contextual Info: 2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB908 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2sb908 2sd1223 b908 transistor b908	PDF
B908 Abstract: 2SB908 2SD1223 Contextual Info: 2SB908 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SB908 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −2 V, IC = −1 A)	Original	2sb908 2sd1223 20070701-ja b908	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2sc429gtm 2sc458 2sc458lg 2sc503 +162sc504 2sc510 2sc512 2sc519 2sc520a 2sc594 sn76131 tlo72cp toshiba 2n3055 m53207p 2n3055 toshiba kia7313ap kia7640ap la5530 m5l8155p tbb1458b	PDF
te 1819 Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331 Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =	OCR Scan	2sd1813 2sd1814 2sd1667 2sd1406 +152sd2107 2sd2105 2sd1267 2sd1445a 2sd1250 2sc4331 te 1819 2sd1878 2sc4211 2sd1649 2sd1856 1815 2sc4723 2sd1707 2sd1929	PDF
b908 Abstract: 2SD1223 2SB908 Contextual Info: 2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB908 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) ·	Original	2sb908 2sd1223 b908	PDF
transistor b908 Abstract: b908 2SB908 2SD1223 10MSA Contextual Info: 2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB908 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2sb908 2sd1223 transistor b908 b908 +110msa	PDF

2SD1223 Search Results

2SD1223 Datasheets (17)

2SD1223 Price and Stock

Toshiba America Electronic Components 2SD1223(TE16L1,NQ)

2SD1223 Datasheets Context Search

D1223

D1223

D1223

2SD1223

2SD1223

2SD1223

d1223

3A 100V npn LOW SATURATION VOLTAGE

D1223

D1223

b908

B908

sn76131

te 1819

b908

transistor b908