D1223 Search Results

D1223

Abstract: 2SD1223 a4503 2SB908
Contextual Info: D1223 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ D1223 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)

D1223

Abstract: 2SB908 2SD1223
Contextual Info: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

Contextual Info: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

ma6351

Abstract: LE-24T ZO 607MA A82496 290446 EM 5135 diode 522110 jp 486TM 241429 dm4021
Contextual Info: INTEL CORP -CUP/PRPHLSJ S7E D • 4 fl2 bl 7 5 01522147 t»23 ■ in te l Pentium Processor User's Manual Volume 2: 82496 Cache Controller and 82491 Cache SRAM Data Book NOTE: The Pentium™ Processor User's Manual consists of three books: Pentium™ Processor Data Book, Order Number 241428; the

Contextual Info: SIEMENS CGY 180 GaAs MMIC • • • • • Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V Overall power added efficiency 35 % Input matched to 50 £1, simple output match ESD: Electrostatic discharge sensitive device,

D1223

Contextual Info: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

Contextual Info: VSC6134 Datasheet Features ● ● ● ● ● ● ● ● ● ● Two ITU-T G.709-compliant processors GR253-compliant STS192 section and line processor OTU synchronous and asynchronous mapping 10 GbE transport with RMON MIB per IEEE 802.3 ITU-T G.975 Reed Solomon encoder and decoder

Contextual Info: 1 111111111111111 1111111 1 111111111111111 1 111111111111111 1 111111111111111 1 1 123456789ABCDEF61EEE1FA11111111 1 11111111 1 11111 1 1 BEB12AA 123314567891A758BCD814E1F3D167D1F1C5A36 E1A12AC1 7!! "C#$%&'1 7!!1 29*1)1+1#$B1EBEE

Contextual Info: 3 GHz Variable Gain LNA with Integrated ½ W Driver Amplifier ADL5246 Data Sheet FEATURES GENERAL DESCRIPTION RF output frequency range: 0.6 GHz to 3 GHz Output IP3: 37 dBm at 2.2 GHz Output P1dB: 28 dBm at 2.2 GHz Noise figure of input amplifier: 1 dB at 2.2 GHz

Contextual Info: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

DVP-40EH

Abstract: DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3
Contextual Info: DVP-PLC Application Manual Programming Industrial Automation Headquarters Delta Electronics, Inc. Taoyuan Technology Center No.18, Xinglong Rd., Taoyuan City, Taoyuan County 33068, Taiwan TEL: 886-3-362-6301 / FAX: 886-3-371-6301 Asia Delta Electronics (Jiangsu) Ltd.

Contextual Info: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

d1223

Abstract: 2SB908 2SD1223
Contextual Info: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

BY236

Abstract: BY235 d25n12 PBY285 KD202A D237A D223B diode drr204 Diode D25N4 PBY267
Contextual Info: a m a t e u m Lars Grallert Diodenvergleichsliste p e U ie 247 electrónica •Band 247 LA R S G R A L L E R T Diodenvergleichsliste M ILITÄ R V E R L A G D ER D EU TSCH EN D EM OKRATISCH EN R EP U B L IK G r a lle r t, L . : D io d e n v e rg le ic h s liste . B e r lin : M ilitä rv e rla g d e r D D R V E B , 1 9 9 0 . 112 S ., 127 B ild e r - ( e le c tr ó n ic a 2 4 7 )

Contextual Info: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

equivalent transistor D1555

Abstract: transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557
Contextual Info: PLC PLC DVP-PLC Application Manual 【Programming】 Table of Contents Chapter 1 Basic Principles of PLC Ladder Diagram Foreword: Background and Functions of PLC . 1-1 1.1 The Working Principles of Ladder Diagram . 1-1

DVP-10SX

Abstract: DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX
Contextual Info: PLC www.delta.com.tw/industrialautomation PLC ASIA Delta Electronics, Inc. Taoyuan1 31-1, Xingbang Road, Guishan Industrial Zone, Taoyuan County 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886-3-362-7267 Delta Electronics Jiang Su Ltd. Wujiang Plant3

d1223

Abstract: 2SD1223 2SB908
Contextual Info: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

D1223

Abstract: a4503 2SB908 2SD1223
Contextual Info: D1223 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ D1223 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)

D1223

Abstract: A4503 2SD1223 2SB908
Contextual Info: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)