2SC50 Search Results

Contextual Info: 2SC5096 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r Unit in mm V H F — UHF B A N D L O W N O ISE A M P L IF IE R A PPLICA TIO N S. • • Low Noise Figure, High Gain. N F = 1.8dB, |S2le |2= 7.5dB f=2GHz M A X IM U M R A T IN G S (Ta = 25°C)

2SC5092

Contextual Info: 2SC5092 SILIC0N NPN EPITAXIAL PLANAR T Y P E TRANSISTOR TENTATIVE DATA U nit in mm V H F - U H F BAN D L O W NOISE A M PLIFIER APPLICATIONS. • • Low Noise Figure, High Gain. N F ^ l.ld B , |S2iel2 —13dB f=lG H z + Q2 2.9- Q 3 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: SILICON PNP EPITAXIAL TY PE PCT PRO CESS HIGH CURRENT SW ITCH IN G APPLICATIONS. U n it in mm Low Collector Saturation Voltage : VCE (sat)= -0.4V (Max.) (Ic = -3 A , I b = - 0.15A) High Speed Switching Time : tgtg=1.0/iS (Typ.) Complementary to 2SC5076 in nr

LT 7706

Abstract: LT 7207
Contextual Info: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S 2 1 e|2= 10dB f=2GHz -H M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 2SC5086 SILICQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r V H F -U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • U n it in mm Low N oise F ig u re , H igh G ain . 1.« ±0.2 N F = l . l d B , |S 2 le P = l l d B f = l G H z 0 8 ±0.1

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • Complementary to 2SC5052. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT VCBO -1 2 0 V Collector-Emitter Voltage VCEO

C5001 transistor

Abstract: transistor C5001 2SC5001 transistor marking C5001
Contextual Info: 2SC5001 Datasheet NPN 10A 20V Middle Power Transistor lOutline Parameter Value VCEO IC 20V 10A Collector CPT3 Base Emitter 2SC5001 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1834 3) Low VCE(sat) VCE(sat)= 0.25V(Max.)

2SC5065

Abstract: 150-1 MARKING toshiba 133
Contextual Info: 2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

2SA1907

Abstract: 2SC5099
Contextual Info: AOK Product Specification AOK Semiconductor Silicon PNP Power Transistors 2SA1907 DESCRIPTION • With TO-3PML package • Complement to type 2SC5099 APPLICATIONS • Audio and general purpose P IN N IN G PIN D E S C R IP TIO N 1 E m itter 2 C o lle cto r

2SA1907

Abstract: 2SC509 2SC5099
Contextual Info: Inchange Semiconductor Product Specification 2SA1907 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SC5099 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline TO-3PML and symbol

V1525

Abstract: 2SC5042
Contextual Info: Inchange Semiconductor Product Specification 2SC5042 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High breakdown voltage, high reliability. ・High speed APPLICATIONS ・Ultrahigh-definition CRT display ・Horizontal deflection output applications

2SC5071

Contextual Info: Inchange Semiconductor Product Specification 2SC5071 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1

ET 2314

Contextual Info: 2SC5065 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR Unit in mm V H F - U H F B A N D L O W NO ISE A M P L IF IE R A PPLIC A TIO N S. • • Low Noise Figure, High Gain. NF = l.ld B , | S 2 l e l 2 = 12dB f=lG H z ÖO + COI Ö M A X IM U M R A T IN G S (Ta = 25°C)

2A marking

Abstract: 2SC5026 Silicon NPN Epitaxial Planar Type smd transistor MARKING 2A npn
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SC5026 Features Low collector-emitter saturation voltage VCE sat . High collector-emitter voltage (Base open) VCEO Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

CBC 328

Abstract: 2SC5086FT bf 478
Contextual Info: 2SC5086FT SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC5086F 1 2 3 CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LC 6 1 CC 1 3 CBC 1 2 Q1 6 5 4 + AREA= 1 .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5053 Features Low saturation voltage, typically VCE sat = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40x40×0.7mm ceramic board). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

2SC5084

Contextual Info: TOSHIBA 2SC5084 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5084 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , Unit in mm + 0.5 2 .5 - 0.3 |S2 lel 2—lld B f= 1GHz MAXIMUM RATINGS (Ta = 25°C)

2SA1907

Abstract: 2SC5099
Contextual Info: SavantIC Semiconductor Product Specification 2SA1907 Silicon PNP Power Transistors DESCRIPTION •With TO-3PML package ·Complement to type 2SC5099 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline TO-3PML and symbol

2SC5022

Abstract: TO220FM Hitachi DSA00108
Contextual Info: 2SC5022 Silicon NPN Triple difused Application TO–220FM High voltage amplifier Features • High brakedown voltage V BR CEO = 1500 V Min 1 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ———————————————————————————————————————————

2SC4926

Abstract: 2SC5051 Hitachi transistor DSA003638
Contextual Info: 2SC5051 Silicon NPN Epitaxial ADE-208-1131A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline

Contextual Info: T O SH IB A 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : v CE(sat) = °-5V (Max.) • High Collector Power Dissipation : P q = 1.3W (Ta = 25°C)

Contextual Info: 2SC5024 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 300 MHz typ • High breakdown voltage and low output capacitance V CE0 = 200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SC5026G • Package ■ Features • Code MiniP3-F2

Contextual Info: T O SH IB A 2SC5065 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC506 5 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 1 el2= 12dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC