2SC480 Search Results

2SC4806

Contextual Info: 2SC4806 SILICON NPN TRIPLE DIFFUSED MESA TYPE H O R IZO N T AL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. U n it in mm HIGH SPEED SW ITCH IN G PO W ER SUPPLY OUTPUT APPLICATIONS. 1 5 .5 1 0 .5 High Voltage : VcBO = l?OOV Max. High Speed : tf=0.15/js (Typ.)

2SC4804

Abstract: ITO-220
Contextual Info: Inchange Semiconductor Product Specification 2SC4804 Silicon NPN Power Transistors DESCRIPTION ・With ITO-220 package ・High breakdown voltage APPLICATIONS ・Switching regulator and high voltage switching applications ・High speed DC-DC converter applications

4946

Abstract: me 4946 4947 2SC5020 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
Contextual Info: - m % a « T y p e No. Manuf. = æ SANYO 2SC 4930 2SC 4931 z 2SC 4932 S 2SC 4933 2SC 4934 ^ 2SC 4935 3L 23C 4336 — 2SC 4940 — f 2 :v- NEC ÏZ. HITACHI s ± il FUJITSU ta t M ATSUS H I T A 2SC4838 ZdLOUUO 2SC4808 2SC4805 2SD2228 2SD1820 2SC3440 2SC4211

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4809J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit : mm 0.80±0.05 For high-frequency amplification/oscillation/mixing 0.12+0.03 –0.01 0 to 0.02

Contextual Info: Transistors 2SC4808 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit Collector-base voltage Emitter open VCBO 15 V Collector-emitter voltage (Base open)

hitachi ha 1374

Contextual Info: 2SC4807 Silicon N PN Epitaxial HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pep = 24 dBm Typ at V CF = 5V , Ic = 100 mA , f = 900 MHz Outline

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4808G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For UHF band low-noise amplification • Package • Low noise figure NF • High forward transfer gain S21e2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SC4808J

Abstract: SC-89
Contextual Info: Transistors 2SC4808J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit Collector-base voltage Emitter open VCBO 15 V Collector-emitter voltage (Base open) VCEO 10 V Emitter-base voltage (Collector open) VEBO 2 V Collector current

2SC4809J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4809J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit : mm 0.80±0.05 For high-frequency amplification/oscillation/mixing 0.12+0.03 –0.01 0 to 0.02

1122a

Abstract: 2SC4807 DSA003637
Contextual Info: 2SC4807 Silicon NPN Epitaxial ADE-208-1122A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , I C = 100 mA , f = 900 MHz

Contextual Info: HITACHI 2SC4807-Silicon NPN Bipolar Transistor Application UPAK VHF & UHF wide band amplifier Features 1 • High gain bandwidth product f-j- = 4.4 GHz typ • High output power 1 dB Power compression point, Pep = 24 dBm typ at VCE = 5V , I c = 100 mA , f = 900 MHz

2SC4809J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4809J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 Unit : mm 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 For high-frequency amplification/oscillation/mixing

2SC4809G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4809G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common emitter) Crb

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4808G Silicon NPN epitaxial planar type For UHF band low-noise amplification • Package • Low noise figure NF • High forward transfer gain S21e2 • High transition frequency fT

2SC4809

Abstract: SC-75
Contextual Info: Transistors 2SC4809 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C 0.4 2 (0.3) 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 Unit Collector-base voltage (Emitter open)

2SC4809

Abstract: matsushita Transistor hFE CLASSIFICATION Marking
Contextual Info: Transistor 2SC4809 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.2+0.1 –0.05 • Features 1˚ 2 0.75±0.15 5˚ Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SC4807

Abstract: 2SC4807ERTR-E
Contextual Info: 2SC4807 Silicon NPN Epitaxial REJ03G0731-0300 Previous ADE-208-1122A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz

2SC4809

Abstract: SC-75
Contextual Info: Transistors 2SC4809 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit Collector-base voltage Emitter open VCBO 15 V Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4808G Silicon NPN epitaxial planar type For UHF band low-noise amplification • Features ■ Package • Low noise figure NF • High forward transfer gain S21e2 • High transition frequency fT

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4809G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Features ■ Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common emitter) Crb