2SC3676 Search Results

High-Voltage Amplifiers

Abstract: 2SC3676 SC46 T0220AB
Contextual Info: Ordering num ber:EN 1801E 2SC3676 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Applications • High-voltage amplifiers. •High-voltage switching applications. • Dynamic focus applications. Features

DAS05

Contextual Info: Ordering n u m b e r:EN 1801E _ 2SC3676 NPN Triple Diffused Planar Silicon Transistor SA iYO i 900V/300mA High-Voltage Amp, High-Voltage Switching Applications A pplications • High-voltage amplifiers. - High-voltage switching applications. •Dynamic focus applications.

2SC3676

Abstract: SC46
Contextual Info: Ordering number:EN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.

2sc3676

Contextual Info: Ordering number:ENN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.

Contextual Info: 2SC3676 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)900 V(BR)CBO (V)1.5k I(C) Max. (A)300m Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

STI3009

Abstract: ESM3004 STIP8006 ESM3002 2SA1227AP STIP-8006 TRS-500 STI-3005 ESM3001 2SC3676
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) (V) Po Max h re *T ON) Min (Hz) r ICBO (CE)sat Max Max (A) (8) Max (Ohms) T Op«r Package Style Max (°C) D vices 20 Watts or More, (Cont'd) 5 10 HSE830 BUW49 BUW49 SS2007

2SC3997

Abstract: HPA150R 2SC4636 2SC3676 2SC4450 TR 2SC3997 2SC3894 2SC3895 DD52RC DD54RC
Contextual Info: b3 E D • 7 cl t17Q7b DG12M3D QTM » T S A J _ m_ ^ S A f t Y O Transistors for Very High-Definition CRT Display H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 2 & Horizontal Output Use with High-speed Damper Diode (Adoption of MBIT Process)(Ta=25t)

Contextual Info: Electrical characteristics Ta = 25 Absolute maximum ratings Package type Device Applications VCBO (V VCEO (V) Vebo (V) ic (mA) PC <W) Icbo max @ Vcb A Icbo max (HA) Vcb (V) C) hFE @ VCE ' Ic h FE »T @ VcE * Ic fr VcE (V) ic (mA) (MHZ) VcE (V) Ic (mA) 2SC3954

electron gun CRT

Abstract: dyna image 2SC3676 TRANSISTOR T0220 CRT electron gun 2SC3675 2SC4256 2SC4257 2SC471 2SC4451
Contextual Info: Transistors for Very High-Definition CRT Display H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 ale D yr'ia.m i cs F o o u s UseNo picture ever out of focus with better focus characteristics High reliability and high breakdown voltage (HVP technology) make it possible to make the grid voltage higher and

2sk3436

Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。

horizontal section in crt television

Abstract: Electron Tubes crt DEPLETION electron gun CRT
Contextual Info: ^ 5 1?' 1* 5 1 ° .- J È 1 ° 7i -Q 33-C& ° w 30^ ¥ . • V No p ic Ì & ^ ^ g ig vb |ii.’Qf fo c u s ,';! arriicFocus Transistor M § fe 3 i ; Dynamic focuè' transistor^chip "1; transistors, with Very high withstand, voltage, by HVP process " - . •’

2SC4633

Contextual Info: Ultrahigh-resolution Display Video Output Transistors FBET Absoluto maximum ratings Type No. Packag* Ha* Bad iteli characteristics (Ta •25 TC) ICBO mut VCB Applications VCBO Veto VEBO 1C cw (V) (V) (mA) PC (W) db ICBOmax O.A) bFESVCE ■1C Vca (V) hFE

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

TT2140

Abstract: transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140
Contextual Info: Ordering number: EP106A Discrete Devices for Video Equipment '04-08 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage