2SC3671 Search Results

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 ST0R0B0 FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. Unit in ram . High DC Current Gain and Excellent hFE Linearity : hFE(l)=140~450 (VCE=2V, : h F E(2)=70(Min.) Ic =0.5A) (VC E=2V, IC=4A) . Low Saturation Voltage

2sc3714

Abstract: 2SC3691 2SC3702 2SC3676 2SC3692 2SC3671 2SC3672 2SC3673 G1508 2SC3678
Contextual Info: - 168 - S Ta=25cC, *EPfäTc=25°C} a s m. % 2SC3671 2SC3672 2SC3673 2SC3675 2SC3676 2SC3678 2SC3679 2SC3680 2SC3685 2SC3686 2SC3687 2SC3688 2SC3689 2SC3691 2SC3692 2SC3693 2SC3694 2SC370Q 2SC3701 2SC3702 2SC3704 2SC3705 2SC3707 2SC3708 2SC3709 2SC3710 2SC3714

2-7D101A

Abstract: 2SC3671
Contextual Info: TOSHIBA 2SC3671 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 STOROBE FLASH APPLICATIONS U nit in mm MEDIUM PO W ER AM PLIFIER APPLICATIONS 7.1 M AX. • High DC Current Gain and Excellent h p g Linearity : hpE (i) = 140~450 : h F E ( 2) = 70 (Min.)

C3671

Contextual Info: 2SC3671 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)

2-7D101A

Abstract: 2SC3671
Contextual Info: TOSHIBA 2SC3671 2SC3671 TO SHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • 7.1 MAX. High DC Current Gain and Excellent hpg Linearity : ^FE (1) —140—450 : hFE(2) = 70 (Min.)

2-7D101A

Abstract: 2SC3671
Contextual Info: 2SC3671 TO SH IBA TOSHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • • 7.1 MAX High DC Current Gain and Excellent hpE Linearity hjrE (1) —140—450 hFE(2) = 70 (Min.)

C3671

Abstract: 2-7D101A 2SC3671
Contextual Info: 2SC3671 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3671 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。: hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (最小) (VCE = 2 V, IC = 4 A)

C3671

Abstract: 2-7D101A 2SC3671
Contextual Info: 2SC3671 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3671 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。: hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (最小) (VCE = 2 V, IC = 4 A)

C3671

Abstract: 2-7D101A 2SC3671
Contextual Info: 2SC3671 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)

C3671

Abstract: 2-7D101A 2SC3671
Contextual Info: 2SC3671 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)

2SD2334

Abstract: 2SD2333 2SD1298 2s02333 2SD1431 2SC3054 2sc3211 2SD2335 2S01876 2SC3535
Contextual Info: - ft m € T y p e No. £ Manuf. = -M SANYO 3£ 2 TOSHIBA a * NEC B ÍL HITACHI ^ it il FUJITSU & T MATSUSHITA fâ T 2SC4480 tö T 2SC4644 2SD 2 2 6 2 □ —A 2SC4480 2SC 3673 2 SD 2 2 6 3 2SD 2 2 6 4 n— A 2SC4482 2SC3671 2 SD 2 2 6 7 3£ 2SD 2 2 6 8 X

2122L

Abstract: 2SD1878 2109 2sd1033 2sd1417 m 2120 2SC4547 2SD1273 2SD1275A 2SD1586
Contextual Info: - *t € Manuf. ID □— A * 2 = n s □ □ $ — A h O— A = ÏZ n tV B ÎL s ir ÍL ÎL m NEC tL HITACHI 2SD1830 2SD1878 2SD1913 2SD880 2SC3671 2SD1825 2SD1830 2SD1829 2SC3746 2SD1830 cn 2SD1829 2SD1828 2SD1829 2SD1828 2SC3661 2SC4135 -E ;# = m □— A

Contextual Info: 2SC3671 TOSHIBA 2SC3671 TOSHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS • • 7.1 MAX. High DC Current Gain and Excellent hjrg Linearity : hjp;E (i) = 140~450 : hFE(2) = 70 (Min.)

2-7D101A

Abstract: 2SC3671
Contextual Info: TO SH IBA 2SC3671 2SC3671 TO SHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm M ED IU M PO W ER A M PLIFIER APPLICATIONS 7.1 MAX. • • High DC Current Gain and Excellent hpE Linearity hjrE (1) —140—450

Contextual Info: TOSHIBA 2SC3671 TOSHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • 7.1 M AX. High DC Current Gain and Excellent hjrg Linearity : ^FE (1) = 140—450 : Î1F E (2 )-’70 (Min-)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

2SB600 NEC

Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
Contextual Info: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *