2SC3598 Search Results

Contextual Info: 2SC3598 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)200m Absolute Max. Power Diss. (W)10 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)

2SC4633

Contextual Info: Ultrahigh-resolution Display Video Output Transistors FBET Absoluto maximum ratings Type No. Packag* Ha* Bad iteli characteristics (Ta •25 TC) ICBO mut VCB Applications VCBO Veto VEBO 1C cw (V) (V) (mA) PC (W) db ICBOmax O.A) bFESVCE ■1C Vca (V) hFE

2SC2320

Abstract: 2SC2495 2SD2227S 2SC3405 2SC3535 2SC3607 2SD1010 2SC3536 2SC3170 2SC4204
Contextual Info: 168 - - ü « tt T y p e N o. 2SC 3611 T * 2SC 3613 2SC 361 4 2SC 361 5 L VS2 *2 04 ✓h a 0 s m. 0 a fâ 2SC 3612 2SC 3 616 M a n u f. / OUI! 2SC 3 618 r-t a 2SC 3 619 / € H SAN YO 1C T O S H IB A 2 m b NEC ±L H IT A C H I s ± il FU JIT S U & t M A T S U S H IT A

SA1386

Abstract: 2SA1381 2SA1369 2SA1371 2SC3566 2SA1386 2SC338 2SC3444 2SA1363 2SA1364
Contextual Info: - 32 - Ta=25‘ C,*£fl(äTc=25T; m z ít ffl & & Ü VcBO VcEO ic (D O Pc Pc* ICBO (V) (V) (A) (W) (W) (max) (U A} M ft 1ífe 03=25*0 hF £ VcB (V) unin) (max) Vc e (V) ïc / i E (A) [*EPfätypffi VcE(sat ^jnax ) (V) (V) le (A) Ib (A) 2SA1363 PD -20 -16

2N5715

Abstract: 2SC1255 nec RF package SOT89 2N4262 diode GG 14 S02369A 2n4073 BF844 MRF-604 2SC3601E
Contextual Info: RF POWER SILICON NPN Item Number I C 5 10 15 20 30 2SC2954 BLU98 BLV90/SL BLV99 BF391Wl 2N4924 2N4925 2SC4165(Al gg~~~ 35 40 BCY66 MM3000 SM2285 ST3000 2SC3071 MM3001 RXT3904 RXT3904 ~rc~~g~ 45 50 2SC4046 BSV52R (A) BSV52R (A) SOR2369 (A) 2SC3953 2SC3782

2SC4566

Abstract: 2sa1752 2SA1852 2SC3781 2SA1474
Contextual Info: SA0YO T r a n s i s t o r s for Ver y Hi gh-Def ini t i on C R T D i s p l a y V i d e o Output Use Our transistors for CRT display use are fabricated using our original process technology. They are designed to meet the characteristic requirements for CRT use.