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    2SC2837 TRANSISTOR Search Results

    2SC2837 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC2837 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2837

    Abstract: 2SA1186 2SC2837 2sa1186
    Text: SavantIC Semiconductor Product Specification 2SC2837 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SA1186 APPLICATIONS ·For audio and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    PDF 2SC2837 2SA1186 2SC2837 2SA1186 2SC2837 2sa1186

    2SA1186

    Abstract: 2SA1186 2SC2837 2SC2837
    Text: SavantIC Semiconductor Product Specification 2SA1186 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·High current capability ·Complement to type 2SC2837 APPLICATIONS ·Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base


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    PDF 2SA1186 2SC2837 2SA1186 2SA1186 2SC2837 2SC2837

    2sa1186

    Abstract: 2SC2837 2SA1186 2SC2837
    Text: JMnic Product Specification 2SA1186 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High current capability ・Complement to type 2SC2837 APPLICATIONS ・Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    PDF 2SA1186 2SC2837 2sa1186 2SC2837 2SA1186 2SC2837

    2SC2837

    Abstract: 2SA1186 2SC2837 2SA1186
    Text: Inchange Semiconductor Product Specification 2SC2837 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1186 APPLICATIONS ・For audio and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    PDF 2SC2837 2SA1186 2SC2837 2SA1186 2SC2837 2SA1186

    2sA1186 transistor

    Abstract: transistor p100 2SA1186 Y130 Y-140 2SC2837 Y140 Y160 5060 transistor 2sc2837 transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications


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    PDF 2SA1186 -150V 2SC2837 2sA1186 transistor transistor p100 2SA1186 Y130 Y-140 2SC2837 Y140 Y160 5060 transistor 2sc2837 transistor

    2SA1186

    Abstract: transistor p100 2SC2837 2sA1186 transistor transistor p90 y130 2sc2837 transistor transistor pnp VCEO 12V Ic 1A Y140 Y160
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications


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    PDF 2SA1186 -150V 2SC2837 2SA1186 transistor p100 2SC2837 2sA1186 transistor transistor p90 y130 2sc2837 transistor transistor pnp VCEO 12V Ic 1A Y140 Y160

    2SA1186

    Abstract: 2sa1186 transistor IE1A 2SC2837 transistor 1564
    Text: 2SA1186 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC2837 ICBO VCB=–150V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –150min V VEBO –5 V V(BR)CEO IC –10 A hFE VCE=–4V, IC=–3A IB –2 A VCE(sat) IC=–5A, IB=–0.5A


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    PDF 2SA1186 2SC2837) MT-100 100max 150min 50min 60typ 110typ 2SA1186 2sa1186 transistor IE1A 2SC2837 transistor 1564

    2SC3852

    Abstract: 2SC5287 2SA1215 2sc4024 2SC4706 2SC4300 2SA1386 Humidifier 2SC3519 2SC3852A
    Text: 2-1 Transistors Absolute Maximum Ratings Part Number Applications VCBO VCEO Ic Pc V (V) (A) (W) 150 150 10 100 ICBO Conditions VCB (µA) (V) 100 150 hFE min 50 Conditions VCE Ic (V) (A) max 2SC2837 Audio, general-purpose 2SC2921 Audio, general-purpose 160


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    PDF 2SC2837 2SC2921 2SC2922 2SC3263 2SC3264 2SC3284 O-220S 95MAX 2SC3852 2SC5287 2SA1215 2sc4024 2SC4706 2SC4300 2SA1386 Humidifier 2SC3519 2SC3852A

    2SA2223

    Abstract: 2SC2922
    Text: 2-1 Transistors Absolute Maximum Ratings Part Number Applications VCBO VCEO Ic Pc V (V) (A) (W) ICBO Conditions VCB (µA) (V) hFE min Conditions VCE Ic (V) (A) max 2SC2837 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3 2SC2921 Audio, general-purpose


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    PDF 2SC2837 2SC2921 2SC2922 2SC3263 2SC3264 2SC3284 2SC3519 2SC3519A 2SC3835 2SC3851 2SA2223

    2SA2223

    Abstract: 2SA2151 2sc4138
    Text: 2-1 Transistors Absolute Maximum Ratings Part Number Applications VCBO VCEO Ic Pc V (V) (A) (W) ICBO Conditions VCB (µA) (V) hFE min Conditions VCE Ic (V) (A) max 2SC2837 Audio, general-purpose 150 150 10 100 100 150 50 180 4 2SC2921 Audio, general-purpose


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    PDF 2SC2837 2SC2921 2SC2922 2SC3263 2SC3264 2SC3284 2SC3519 2SC3519A 2SC3835 2SC3851 2SA2223 2SA2151 2sc4138

    034T

    Abstract: 2sc6011
    Text: 2-1 Transistors Absolute Maximum Ratings Part Number Applications VCBO VCEO Ic Pc V (V) (A) (W) ICBO Conditions VCB (µA) (V) hFE min Conditions Ic VCE (V) (A) max 2SC2837 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3 2SC2921 Audio, general-purpose


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    PDF 2SC2837 2SC2921 2SC2922 2SC3179 2SC3263 2SC3264 2SC3284 2SC3519 2SC3519A 2SC3835 034T 2sc6011

    2SA1186

    Abstract: 2SC2837 DSA0016502
    Text: 2SA1186 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC2837 ICBO VCB=–150V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –150min V VEBO –5 V V(BR)CEO IC –10 A hFE VCE=–4V, IC=–3A IB –2 A VCE(sat) IC=–5A, IB=–0.5A


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    PDF 2SA1186 2SC2837) MT-100 100max 150min 50min 60typ 110typ 2SA1186 2SC2837 DSA0016502

    2sc2837

    Abstract: 2SA1186
    Text: 2SC2837 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1186 VCB=150V 100max µA V IEBO VEB=5V 100max µA IC=25mA 150min V hFE 50min∗ VCE=4V, IC=3V A VCE(sat) IC=5A, IB=0.5A 2.0max V 100(Tc=25°C) W fT VCE=12V, IE=–1A 70typ MHz Tj 150 °C


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    PDF 2SC2837 2SA1186) MT-100 100max 150min 50min 70typ 60typ 2sc2837 2SA1186

    2SC2837

    Abstract: 2SA1186 cin60 2SA1186 2SC2837 DSA0016506
    Text: 2SC2837 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1186 VCB=150V 100max µA V IEBO VEB=5V 100max µA IC=25mA 150min V hFE VCE=4V, IC=3V 50min∗ V 2 A VCE(sat) IC=5A, IB=0.5A PC 100(Tc=25°C) W fT VCE=12V, IE=–1A 70typ MHz Tj 150 °C


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    PDF 2SC2837 2SA1186) MT-100 100max 150min 50min 70typ 60typ 2SC2837 2SA1186 cin60 2SA1186 2SC2837 DSA0016506

    SAP16

    Abstract: 2Sc4495 2SD2562 2SD2401 2SC3858 2SA1494 SAP16N 2SB1686 2sa1216 2sc2837 SAP09n to 3p
    Text: Power Transistors 2-1 2-1-1 Transistors for Audio Amplifiers •Complementary Transistors for Output Pc Ic VCEO W (A) (V) 30 50 60 75 80 85 100 125 130 150 200 6 80 6 110 Chip Single Transistor General 2SA1725 Package Darlington LAPT 2SC4511 2SA1726 TO-220F


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    PDF 2SA1725 2SA1726 2SA1693 2SA1907 2SC4511 2SB1686 2SC4512 2SB1659 2SC4466 2SC5099 SAP16 2Sc4495 2SD2562 2SD2401 2SC3858 2SA1494 SAP16N 2sa1216 2sc2837 SAP09n to 3p

    2SA1295 2SC3264

    Abstract: 2SA1694 2SC4467 2SA1186 2SC2837 MT100 2sa1492 2sc3856 T03PF transistor 2sa1494 2SB1560 2SD2493 transistor 2sb1624 2sd2493
    Text: 2-1. Power Transistors Transistors for Audio Amplifier Single emitter Type No. PC W 2SA1725/2SC4511 30 2SA1726/2SC4512 50 VCEO (V) IC (A) hFE (min) fT (MH Z) Package FM20 (T0220F) MT-25 (T0220) 80 6 2SA1693/2SC4466 MT-100 (T03P) 60 2SA1907/2SC5099 FM100 (T03PF)


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    PDF 2SA1725/2SC4511 2SA1726/2SC4512 2SA1693/2SC4466 2SA1907/2SC5099 FM100 T03PF) 2SA1908/2SC5100 2SA1694/2SC4467 2SA1909/2SC5101 2SA1673/2SC4388 2SA1295 2SC3264 2SA1694 2SC4467 2SA1186 2SC2837 MT100 2sa1492 2sc3856 T03PF transistor 2sa1494 2SB1560 2SD2493 transistor 2sb1624 2sd2493

    Untitled

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1186 Silicon PNP Power Transistor i^ DESCRIPTION • High Collector-Emitter Breakdown VoltageV(BR)CEO=-150V(Min) • Good Linearity of hFE


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    PDF 2SA1186 -150V 2SC2837 -25mA -150V;

    transistor 2SA1216

    Abstract: transistor 2SC4467 2sc2837 sap16p
    Text: Power Transistors 2-1 2-1-1 Transistors for Audio Amplifiers •Complementary Transistors for Output Pc Ic VCEO W (A) (V) 30 50 60 75 80 85 100 125 130 150 200 6 80 6 110 Chip Single Transistor General 2SA1725 Package Darlington LAPT 2SC4511 2SA1726 TO-220F


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    PDF 2SA1725 2SA1726 2SA1693 2SA1907 2SC4511 2SB1686 2SC4512 2SB1659 2SC4466 2SC5099 transistor 2SA1216 transistor 2SC4467 2sc2837 sap16p

    2SA1186

    Abstract: 2SC2837 2sA1186 transistor
    Text: ¿Z&MOSPEC HIGH POWER PNP SILICON POWER TRANSISTORS PNP .designed for use in general-purpose amplifier and switching application. 2SA1186 FEATURES: * Recommend for 60 W High Fiderity Audio Frequency Amplifier Output stage * Complementary to 2SC2837 10 AMPERE


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    PDF 2SC2837 2SA1186 2SC2837 2sA1186 transistor

    B205A

    Abstract: 2SA1186 2SC2837
    Text: AOK AOK Semiconductor Product Specification 2 S A 11 8 6 S ilicon PNP P o w er Transistors DESCRIPTION • W ith TO-3PN package • High current capability • Complement to type 2SC2837 APPLICATIONS • A udio and general purpose applications PINNING PIN


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    PDF 2SA1186 2SC2837 B205A 2SA1186

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO LT» SSE D • 7 ^ 0 7 41 GODDTHS 04fl H S A K J as- 3 Silicon N PN Epitaxial Planar 2SC2837 * LA PT ☆ Complement to type 2 S A 1 1 8 6 Application Example : • Outline Drawing 2 . MT-100(T03P Audio and General Purpose Electrical Characteristics


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    PDF 2SC2837 MT-100 100max 150mm 30min FM100 45x01 MT-25

    2SC2837

    Abstract: 2SA1186 2SC2837 2sc2837 transistor 2sa1186
    Text: ¿Z&MOSPEC HIGH POWER NPN SILICON POWER TRANSISTORS .designed for use in general-purpose amplifier and switching application. FEATURES: * Recommend for 60 W High Fiderity Audio Frequency Amplifier Output stage * Complementary to 2SA1186 10 AMPERE POWER TRANASISTOR


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    PDF 2SA1186 2SC2837 2SA1186 2SC2837 2sc2837 transistor 2sa1186

    sanken power transistor 2SA1216

    Abstract: 2SC2922 SANKEN 2SC3855 SANKEN sanken power transistor 2sa1295 SANKEN 2sc3909 2SC3854 sanken 2SC2922 sanken transistor 2Sa1491 SANKEN 2SA1186 SANKEN 2SC4138
    Text: CONTENTS • Transistor Selection SANKEN POWER TRANSISTORS 2SC3854 •83 2SC4512 125 Guide .2 2SA1860 .43 2SA1907 . .4 4 2SC3855 84 2SC4517 126 ■ Reliability. 8 2SA1908 . 45


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    PDF 2SA1186. 2SA1215. 2SA1216. 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386A 2SA1488 2SA1860 sanken power transistor 2SA1216 2SC2922 SANKEN 2SC3855 SANKEN sanken power transistor 2sa1295 SANKEN 2sc3909 2SC3854 sanken 2SC2922 sanken transistor 2Sa1491 SANKEN 2SA1186 SANKEN 2SC4138

    2sa11

    Abstract: 2SA12 2SA17 2SB1560 2SA16 2SD2390 2SD2401 2SA13 2SD2493 2SC3264
    Text: 2-1. Power Transistors • Transistors for Audio Amplifier # Single emitter Type No. Pc W 2SA17 2 5 / 2SC4511 30 2SA17 2 6 / 2SC4512 50 Vceo (V' I- A hFE (min) fT (MHz'! Package FM20ÌT0220F) MT-25(T0220) 80 6 2SA16 9 3 / 2SC4466 MT-100ÌT03P) 60 2SA19 0 7 / 2SC5099


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    PDF 2SA17 2SC4511 2SC4512 2SA16 2SC4466 2SA19 2SC5099 FM100 T03PF) 2sa11 2SA12 2SB1560 2SD2390 2SD2401 2SA13 2SD2493 2SC3264