2SA19 Search Results

2sa1943 toshiba transistor

Contextual Info: 2SA1943 T O S H IB A 2 S A 1 943 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5MAX. • • ^3.3 ±0.2 Complementary to 2SC5200 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.

Contextual Info: 2SA1954 TO SHIBA 2 S A 1 954 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS G ENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION • Low Saturation Voltage • Large Collector Current VCE (sat) d )= —15mV (Typ.) @ Iq = —10mA/ Iß = —0.5mA

2SC5242

Contextual Info: 2SC5242 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 15.9MAX. • • • — High Collector Breakdown Voltage : V c g o = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.

tr 2sc5200

Abstract: power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 tr 2SA1943
Contextual Info: T O SH IB A 2SC5200 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 20.5MAX. • • Unit in mm ^3.3 ±0.2 Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C

2SA1941

Abstract: 2SC5198
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC5198 PO W ER AMPLIFIER APPLICATIONS. • • U n it in mm Complementary to 2SA1941 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage

2SA1909

Abstract: 2SC5101
Contextual Info: Inchange Semiconductor Product Specification 2SA1909 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SC5101 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline TO-3PML and symbol

"medium power Amplifier"

Abstract: 2SA1979UF
Contextual Info: Transistors IC SMD Type Medium Power Amplifier 2SA1979UF Features Large collector current. Suitable for low-Voltage operation because of its low saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

marking aae

Abstract: marking aag smd AAE smd marking AAE 2SA1946 hFE CLASSIFICATION Marking smd ic marking aae
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1946 Features Low collector saturation voltage VCE sat =-0.25V typ High fT: fT=180MHz typ Excellent linearity of DC forward current gain High collector current Icm=-1A Small package for mounting Absolute Maximum Ratings Ta = 25

C5103

Abstract: transistor C5103 C5103 Transistor
Contextual Info: 2SC5103 Datasheet NPN 5A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 5A CPT3 Collector Base Emitter 2SC5103 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low VCE(sat) VCE(sat)=0.3V(Max.) (IC/IB=3A/0.15A)

2SA1986

Abstract: 2SC5358
Contextual Info: JMnic Product Specification 2SA1986 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC5358 APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage

2SC5100

Abstract: 2SA1908
Contextual Info: JMnic Product Specification 2SC5100 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SA1908 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol

2SA1909

Abstract: 2SC5101 027S
Contextual Info: JMnic Product Specification 2SA1909 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SC5101 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline TO-3PML and symbol

2SA1987 2SC5359

Abstract: 2SA1987 100W AUDIO ic AMPLIFIER 2SC5359
Contextual Info: JMnic Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5359 ・High collector voltage APPLICATIONS ・Power amplifier applications ・Recommended for 100W high fidelity audio frequency amplifier output stage

Contextual Info: High-speed Switching Transistor -60V, -5A 2SA1952 Features 1) High speed switching. (tf : Typ. 0.15 s at IC = -3A) 2) Low VCE(sat). (Typ. -0.2V at IC/IB= -3/-0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. Dimensions (Unit : mm)

a1924 transistor

Abstract: A1924 2SA1924
Contextual Info: 2SA1924 TOSHIBA 2 S A 1 924 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SW ITCHING APPLICATIONS. • • High Voltage : V ç;e o = —400V Low Saturation Voltage : V qe sat = —IV (Max.) (IC = _ 100mA, IB = - 10mA) Collector Metal (Fin) is Fully Covered with Mold Resin

E5031

Abstract: 2SA1965
Contextual Info: Ordering number: E^5031 No.5031 //_2 S A 1 9 6 5 // // PNP Epitaxial Planar Silicon Transistor Muting Circuit Applications Features • Very small-sized package permitting 2SA1965-applied sets to be made small and slim. • Small output capacitance.

2SA1939

Abstract: 2SC5196
Contextual Info: 2SA1939 TO SHIBA 2 S A 1 939 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 M A X . • • Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. 0 3 .2 ± 0 .2 %

A1972

Abstract: 2SA1972
Contextual Info: 2SA1972 T O S H IB A 2 S A 1 972 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 5.1 M AX. • High Voltage : V ç;e = —400V 9 M A X IM U M RATINGS Ta = 25°C SYMBOL v CBO VCEO Ve b o ic ÏCP :B PC Tj

2SA1907

Abstract: 2SC5099
Contextual Info: AOK Product Specification AOK Semiconductor Silicon PNP Power Transistors 2SA1907 DESCRIPTION • With TO-3PML package • Complement to type 2SC5099 APPLICATIONS • Audio and general purpose P IN N IN G PIN D E S C R IP TIO N 1 E m itter 2 C o lle cto r

2SA1937

Contextual Info: 2SA1937 TOSHIBA 2 S A 1 937 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS High Voltage : V^ e O = —600 V MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Colleetor-Emitter Voltage v CEO

Contextual Info: 2SA1932 SILICON P N P EPITAXIAL T Y P E Unit in mm P O W E R A M P L IF IE R A P P L IC A T IO N S . D R IV E R ST A G E A M P L IF IE R A P P L IC A T IO N S. • • High Transition Frequency : f'j' = 70MHz Typ. Complementary to 2SC5174 « 7iT M A X I M U M R A T IN G S (Ta = 25°C

2SA1907

Abstract: 2SC509 2SC5099
Contextual Info: Inchange Semiconductor Product Specification 2SA1907 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SC5099 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline TO-3PML and symbol

MARKING SMD PNP TRANSISTOR

Abstract: SMD IC marking 2SA1981SF hFE-100
Contextual Info: Transistors IC SMD Type PNP Silicon Transistor 2SA1981SF SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Hfe:.hFE=100 to 320 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

2SA1908

Abstract: 2SC5100
Contextual Info: Inchange Semiconductor Product Specification 2SC5100 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SA1908 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol