2SC255 Search Results

1c01

Abstract: 2SC25
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC2552 INDUSTRIAL APPLICATIONS Unit in mm SW IT C H IN G REGULATOR AND HIGH VOLTAGE SW IT C H IN G A P P L IC A T I O N S 0 3 .6 ± < 1 2 1 0 .3 MAX. HIGH SPEED D C -D C CONVERTER A P P L IC A T I O N FEATURES : m . Excellent Switching Times

2SC2553

Abstract: 400V INDUSTRIAL voltage regulator 555D AC75 JCI07555 ha010
Contextual Info: TOSHIBA {DISCRETE/OPTO} 909 725 0 TO SHI BA Tt> < 0 I S C R E T E /O P T O DE | T E H T E S D □□□75S3 7 0 T '- J S'öC u 7 5 5 3 2SC2553 ff S IL IC O N NPN T R IP L E D IF F U S E D TYPE INDUSTRIAL APPLICATIONS Unit in mm S W I T C H I N G R E G U L A T O R AND H IG H VO LT A G E

2SC2552

Abstract: NPN Transistor 1A 400V npn transistors 400V 1A DC DC converter 1A 400V 400V voltage regulator high voltage fast switching npn transistor npn transistors 400V 0.1A transistor Ic 1A datasheet NPN DC DC converter 400V HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2552 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 400V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications.

2SA1091

Abstract: 2SC2551 SC43
Contextual Info: 2SC2551 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC2551 ○ 高電圧制御用 ○ プラズマディスプレイ, ニクシー管駆動用 ○ ブラウン管輝度調整用 単位: mm • 高耐圧です。 : VCBO = 300 V, VCEO = 300 V

2SC2556

Abstract: 2SC2556A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2556 2SC2556A Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High VCBO ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·Audio frequency output amplifier PINNING

2SC2553

Abstract: DC DC converter 5v to 200V ic npn transistors 400V 1A npn transistors 400V 3A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2553 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High collector breakdown voltage : VCEO=400V Min ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max.@IC=4A APPLICATIONS ·Switching regulator and high voltage

2sc2555

Contextual Info: TOSHIBA 2SC2555 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC2555 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS. • • Excellent Switching Times : tr = l.O^s Max. , tf= 1.0//s (Max.) at I^ = 4A

Contextual Info: 2SC2551 TO SHIBA 2SC2551 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGHT VOLTAGE CONTROL APPLICATIONS PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS . 5.1 M AX.

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9 09 72 50 TO SHI BA Sb DI SCR ETE/OPTO DE | ^ C H 7 2 S 0 S'ÓC U7553 2SC2553 SIL IC O N NPN T R IP L E D IF F U S E D TYPE INDUSTRIAL S W IT C H IN G S W IT C H IN G R E G U L A T O R AND H IG H VO LT A G E A P P L IC A T IO N S .

2sC2335

Abstract: 2sc1009 2SC2534 TOSHIBA 2803 2sc2805 2SC1817A 2sc2555 2SC3151 2SC2895 2sc3153
Contextual Info: m s tt Manuf. T y p e No. ÍSS tc 2SC 2788 2SC 2789 « — « ^ $ S^NYO 2SC3040 2SC2555 2SC3277 2SC2650 X 2 X SE X ^ 2SC3151 2 SC 2794 Ä 2 2SD1682 2SC 2796 - ft 2SC 2790A 2SC 2792 2SC 2793 jf 2SC 2797 TOSHIBA 2SC3153 2SD794A & T MATSUS H I T A h m MITSUBISHI

2SC4542

Abstract: 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555
Contextual Info: - 192 - SU £ Type No. tt £ Manuf. □— A 2SC 4506 H # SANYO M £ TOSHIBA B a NEC 2SC3789 2SC2551 2SC3209 2SC 4507 ✓ 2SC4106 2SC2553 2SC2518 B HITACHI Ai Ä dr ii FUJITSU fâ T MATSUSHITA 2SC 4508 * 2SC4107 2SC3626 2SC4423 2SC3306 2SC 4510 2SC4424 2SD1313

Contextual Info: 2SC2551 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR AND DRIVER APPLICATIONS Package: TO-92 * Complement To 2SA1091 * Collector-Base Voltage VCBO=300v ABSOLUTE MAXIMUM RATINGS #t T u r t l e

Contextual Info: 2SC2553 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm S W ITCHING REGULATOR A N D HIGH VOLTAGE SW ITCHING W1 APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. • • Excellent Switching Times : tr =1.0/^s (Max.), tf=1.0/us (Max.) at Ic= 4 A

2sc2555

Contextual Info: Inchange Semiconductor Product Specification 2SC2555 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・High collector breakdown voltage VCEO=400V(Min) ・Excellent switching times : tr=1.0 s(Max.) tf=1.0μs(Max.)@ IC=4A APPLICATIONS ・Switching regulator and high voltage

2SC2556

Abstract: 2SC2556A
Contextual Info: Inchange Semiconductor Product Specification 2SC2556 2SC2556A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High VCBO ・Low collector saturation voltage ・High transition frequency APPLICATIONS ・Audio frequency output amplifier

2SC2551

Abstract: 2SA1091 2SA109
Contextual Info: 2SC2551 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2551 Industrial Applications Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V

DC DC converter 5v to 200V ic

Abstract: 2sc2555
Contextual Info: TOSHIBA 2SC2555 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC2555 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS. • • Excellent Switching Times : tr=1.0/^s Max. , tf^l.O/^s (Max.) at l0 = 4A

2sc2555

Abstract: DC DC converter 5v to 200V ic
Contextual Info: SavantIC Semiconductor Product Specification 2SC2555 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·High collector breakdown voltage VCEO=400V(Min) ·Excellent switching times : tr=1.0µs(Max.) tf=1.0µs(Max.)@ IC=4A APPLICATIONS ·Switching regulator and high voltage

KA 3264

Abstract: 2SC3136 2SD689 2SC3259 K 3264 2SC2456 2SC2482 2SC3019 2SD1431 2sc2371
Contextual Info: - 158 - s « Type No. tt £ Manuf. 2SC 3259 * S tS t c 2SC 3260 * ífM&TE 2SC 3261 „ « S Æ X SANYO X NEC B ÍL HITACHI ^ 2SC2555 2SC3322 fé T MATSUSHITA ✓ JE 2SC 3266 ✓ S 3£ 2SD1246 2SC 3267 * $ 2SD1246 2SC 3268 3t $ 2SD1295 □- A 2SC2271 □- A

2SC2804

Abstract: 2SC517 2Sd428 2sc1279 2SC503 2SC1515 2SC1923 2sc1907 2SC1047 2SC1809
Contextual Info: m s T y p e No. tt € Manuf. = » SANYO X S TOSHIBA 2SC 778 / = # 2SC51" 2 SC 779 3K 3E 2SC2073 2SC 780A Ä 2 * 2 SC 780AGTM X £ 2SC2551 * 2SC 781 S 9 2SC503 * 2SC 782 X 2SC 782A K S 2SC782 * - » * 2SC 783 , * 2SC 784 * 2SC 785 „ * * * 2 SC 786 * 2SC 787

Nec K 872

Abstract: 2SD887 2sc1162 2SD883 2sc2335 2SD877 2SD756 2sd756 e 2sc3114 2SC3247
Contextual Info: - s € tt « Manuf. T y p e No. H Ä SANYO S T O SHIBA S m NEC ÍI HITACHI S ± iS FUJITSU fâ T MATSUS H I T A 2 S D 860 ✓' ta T 2SC25S2 2SD 860A te T 2SC2552 2SD 860B fâ T 2SC2552 2SD 861 «- te T 2SC2552 2SC3169 2SD 861A te T 2SC2552 2SC3169 2SD 861B

Contextual Info: | e 2SA1091 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AND SWITCHING APPLICATION Package; TO-92 * Complement to 2SC2551 • Collector-Emitter Voltage VCEO=-300V Symbol R ating Unit Collector-Base Voltage

2SC2551

Abstract: nixie tube driver 2SA1091
Contextual Info: 2SC2551 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2551 Industrial Applications Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V

Contextual Info: 2SC2559M Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)35 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)18 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)200u @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V) @I(C) (A) (Test Condition)