2SC244 Search Results

TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED

Abstract: 2sc2440
Contextual Info: 2SC2440 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High voltage,High speed switching High reliability Applications 1 : Base 2 : Collector Switching regulators Ultrasonic generators

2sc2440

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Features ue pl d in an c

npn transistors 400V 3A

Abstract: 2SC2440 high frequency npn transistors 400V 3A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2440 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters

2SB1463J

Abstract: SC-89
Contextual Info: Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) • Absolute Maximum Ratings Ta = 25°C

2SC2412KLN

Abstract: 2SC2494 2SC2431 HF 450 2SC2442 2SC2494-MA 2SC2410S 2SC2411K 2SC2412K 2SC2427
Contextual Info: - 124 - w X Ë fà Ta=25U *EP(áTc=25'G m 2SC2410S 2SC2411K 2SC2412K 2SC2412KLN 2SC2413K 2SC2427 2SC2428 2SC2429 2SC2429A 2SC2430 2SC2431 2SC2432 2SC2433 2SC2434 2SC2437 2SC2438 2SC2440 2SC2442 2SC2443 2SC2458 2SC2458L 2SC2459 2SC2462 2SC2463 2SC2464 2SC2465

2SB1463J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01

2SC2440

Abstract: 2SC244
Contextual Info: Inchange Semiconductor Product Specification 2SC2440 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters

2SC2494

Abstract: 2SC2553 2SC2431 2SC2534 2SC2495 2SC2430 2SC2443 2SC2530 2sc2555 2SC2410S
Contextual Info: - 124 - w X Ë f à m 2SC2410S 2SC2411K 2SC2412K 2SC2412KLN 2SC2413K 2SC2427 2SC2428 2SC2429 2SC2429A 2SC2430 2SC2431 2SC2432 2SC2433 2SC2434 2SC2437 2SC2438 2SC2440 2SC2442 2SC2443 2SC2458 2SC2458L 2SC2459 2SC2462 2SC2463 2SC2464 2SC2465 2SC2466 2SC2467 2SC2468

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO

2sc2440

Contextual Info: 2SC2440 H ± ' < t7 - Y :7 > Ì > Z . 9 N P N = f ii£ t f t ^ U — -f-M TRIPLE DIFFUSED PLANER TYPE *WJ±, * * * f HIGH VOLTAGE, HIGH SPEED SWITCHING • fl-Jfé'ÎîÈ : Outline Drawings 4.5*02 13 Features • ¡iifiiS,iSijSx -f 'y + 's V • S iffS t i

2SC2440

Abstract: npn transistors 400V 3A
Contextual Info: JMnic Product Specification 2SC2440 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Features ■ Package • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO

2SC2440

Abstract: 2sc244 JEDEC 2a
Contextual Info: 2SC2440 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High voltage,High speed switching High reliability Applications 1 : Base 2 : Collector Switching regulators Ultrasonic generators

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

C3182N

Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
Contextual Info: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn

2SC2770

Abstract: 2SC2930 ETN36-030 2SC2443 2SD806 ET125 ET127 ETM36-030 ETN01-055 ETN31-055
Contextual Info: . COLLMER SEMICONDUCTOR INC 2SE D • I S5BÔ7TB OÜD1GTE 5 Hi 7^35-/*5* Ratings and Specifications ■r-,33 -¿f ¡1 0 Large current speed switching transistors • These Ic can handle large current up to 3 0 or 5 0 Amps yet the switching speed is very high.

2SC2930

Abstract: 2SC2770 ET127 ETN01-055 2SC2443 2SD806 ET125 ETM36-030 ETN31-055 ETN36-030
Contextual Info: . COLLMER SEMICONDUCTOR INC 2SE D • I S5BÔ7TB OÜD1GTE 5 Hi 7^35-/*5* Ratings and Specifications ■r-,33 -¿f ¡1 0 Large current speed switching transistors • These Ic can handle large current up to 3 0 or 5 0 Amps yet the switching speed is very high.

2SB1463J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

C2482

Abstract: C3468 2SC2663 2Sc3468 2SC3208 c2981 C2787 M 3211 2sc1510 C1573
Contextual Info: - 15 6 - §ä « Type No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »Hm? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * 2SC 3193 ' 2SC 3194 / ¿ 2SC 3195 2SC 3196 TOSHIBA «am i »am ? 2SC 3199 X S a ts NEC