2SC192 Search Results

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

tl 271

Abstract: 2SC1815 2SC2926 2SC290B 2SC1923 2sc1959 2SC1907 288a 2SC266B 2SC828
Contextual Info: ft §y £ Type No. € = Manuf. SANTO m Ä 2 TOSHIBA m. NEC B HITACHI tL * ± a FU JITSU fé T MATSUSHITA m h MITSUBISHI □ — A ROHM * 2SC 251A n 2SC941TM 2SC1215 * 2SC1923 2SC1215 2SC2926 2SC1923 2SC1215 2SC2926 2SC 252 ^ a m * 2SC 253 * 2SC 260 ✓

2sc1923

Abstract: 10ID
Contextual Info: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be

2SC1275

Abstract: 2sc1927
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION in millimeters consists of two chips equivalent to the 2SC1275, and is designed for 5.0 MIN.

2SC1275

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1927 is an NPN silicon epitaxial dual transistor that in millimeters

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1927 is an NPN silicon epitaxial dual transistor that

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC1923 TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

2sc1275

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC1927 is an NPN silicon epitaxial dual transistor that

Contextual Info: 2SC1928 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)315m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)200n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC1923-O

Contextual Info: 2SC1923 SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR H IG H FR EQUENCY A M P LIF IE R A PP LIC A T IO N S . FM , RF, M IX , IF A M P LIF IE R A P P LIC A T IO N S . • Small Reverse Transfer Capacitance : Cre = 0.7pF Typ. • Low Noise Figure : NF = 2.5dB (Typ.) (f= 100MHz)

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

2SC1922

Contextual Info: Inchange Semiconductor Product Specification 2SC1922 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage ・High speed switching APPLICATIONS ・For TV horizontal output applications PINNING See Fig.2 PIN DESCRIPTION

2SC1929

Contextual Info: Inchange Semiconductor Product Specification 2SC1929 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High VCEO ·Large PC APPLICATIONS ·AF output for direct main operation TV PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1926 is an NPN silicon epitaxial dual transistor that

2SC1922

Contextual Info: SavantIC Semiconductor Product Specification 2SC1922 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·For TV horizontal output applications PINNING See Fig.2 PIN DESCRIPTION 1 Base

2SC1921

Abstract: Hitachi DSA00333
Contextual Info: 2SC1921 Silicon NPN Triple Diffused Application • High frequency high voltage amplifier • Video output Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC1921 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage

2SC1921

Abstract: 2SC1921TZ-E PRSS0003DC-A
Contextual Info: 2SC1921 Silicon NPN Triple Diffused REJ03G0695-0200 Previous ADE-208-1060 Rev.2.00 Aug.10.2005 Application • High frequency high voltage amplifier • Video output Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector

2sc1921

Contextual Info: 2SC1921 Silicon NPN Triple Diffused HITACHI Application • High frequency high voltage amplifier • Video output Outline TO-92MOD 11 1. Emitter 2. Collector 3. Base 369 2SC1921 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage

Contextual Info: 2SC1921 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)250 I(C) Max. (A)50m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2sC1923 transistor

Abstract: vqb 27 Toshiba 2SC1923 2sc1923 10ID
Contextual Info: TOSHIBA 2SC1923 TOSHIBA TRANSISTOR 2SC1923 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. FM, RF, MIX, IF AM PLIFIER APPLICATIONS. • Small Reverse Transfer Capacitance : Cre = 0.7pF (Typ.) Low Noise Figure

2SC1921

Abstract: Hitachi DSA002754
Contextual Info: 2SC1921 Silicon NPN Triple Diffused Application • High frequency high voltage amplifier • Video output Outline 2SC1921 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 250 V Collector to emitter voltage VCEO

IY TRANSISTOR

Abstract: 2sc1923 2sC1923 transistor 10ID
Contextual Info: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be

2sC1923 transistor

Abstract: 2sc1923 common base amplifier circuit common emitter amplifier IY TRANSISTOR The 2002 is a COMMON BASE transistor 10ID FEI 30
Contextual Info: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be

2SC1929

Contextual Info: Power Transistors 2SC1929 2SC1929 Silicon NPN Planar Type Package Dimensions A F Output for Direct Main Operation T V U nit ! mm • Features • High collector-em itter voltage 1 0 .5 ± 0 .5 V c e o E Oui (Oh 'i T • Large collector pow er dissipation (Pc)