2SB70 Search Results

2SB709A

Abstract: marking Bq sot23 hFE CLASSIFICATION Marking MARKING BQ marking BS SOT-23
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB709A Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High forward current transfer ratio hFE. +0.1 1.3-0.1 +0.1 2.4-0.1 automatic insertion through the tape packing and the magazine 0.4 3 Mini type package, allowing downsizing of the equipment and

Contextual Info: Product specification 2SB709A Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High forward current transfer ratio hFE. +0.1 1.3-0.1 +0.1 2.4-0.1 automatic insertion through the tape packing and the magazine 0.4 3 Mini type package, allowing downsizing of the equipment and

2SD568

Abstract: K 4080 2SB707
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB707 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD568 APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed

B703A

Abstract: D743A 2SB703 2SB703A 2SD703A TIC 136 Transistor 2SD743 703A 2SD743A transistor 2SB 1306
Contextual Info: ¿Z&MOSPEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS PNP NPN 2SB703 2SD743 2SD703A 2SD743A .designed for use in audio frequency power amplifier,low speed switching application FEATURES: 4.0 AMPERE COMPLEMENTARY SILICON POWER TRANASISTORS 80-100 VOLTS

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and

transistor MAR 543

Abstract: 2SB709A 2SD0601A 2SD601A 2SB0709A
Contextual Info: Transistor 2SD0601A 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 ñ0.05 • Features 5° 0.4±0.2 2.8+0.2 -0.3 1.50+0.25 -0.05 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage

marking BR

Abstract: 2SB709A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB709A SOT-23 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.2 A ICM: Collector-base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0601A (2SD601A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2

706a

Abstract: 2SB706 2SB706A 2SD746 2SD740A 2SD740 ISP746 MR255 TUMU GB44.706A
Contextual Info: 2SB706, 706A 2S D 746. 746A 2SB 706,706A / 2SD 746,746A P N P N P N = * « « « - > 'J □ > y7 9 P N P N P N SILICO N T R IP L E D IFFU SED T R A N S IS T O R f iJ S iS t W ij lf f lf f l A u d io Frequency P o w e r A m p lifier n m FE A T U R E S • 2 . « « r > * - r . y < , r - i r ’X h l

2SD745

Abstract: 2SB705 2SB705A 2SD745A 705B 745B
Contextual Info: 2SB705.705A,705B 2SI>745.745A,745B 2SB705,705A,705B/2SD745,745A,745B P N P NPN P N P N PN SILICO N T R IP L E D IFFU SED TR A N SIST O R Audio Frequency Pow er Amplifier • tt FEATURES • 2 . 4 8 « t - n . V '* -r 'r — > ~ ? h b . - Mo Id pow er I r a a n s to r m ounted by m o b o lts.

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XP04601 XP4601
Contextual Info: Composite Transistors XP04601 XP4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification 0.65 1 6 2 5 3 4 +0.05 0 to 0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A) 0.12 –0.02 0.9±0.1

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: Transistor 2SD0601A 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm +0.2 2.8 –0.3 Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage

sot 23 transistor

Contextual Info: 2SB709A SOT-23 Transistor PNP 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features — For general amplification — Complementary to 2SD601A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage

2SB0709A

Abstract: 2SB709A 2SC2404 XN04683 XN4683
Contextual Info: Composite Transistors XN04683 XN4683 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 3 2 0.50+0.10 –0.05 • 2SC2404 + 2SB0709A (2SB709A) Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open)

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN05601 XN5601
Contextual Info: Composite Transistors XN05601 XN5601 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter Tr2 1.1+0.2 –0.1 2SB0709A(2SB709A) + 2SD0601A(2SD601A)

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN04601 XN4601
Contextual Info: Composite Transistors XN04601 XN4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter 1.1+0.2 –0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A)

2SB705

Abstract: 120w audio power amplifier 2SD745 705A 2SB705A 2SB705B
Contextual Info: Inchange Semiconductor Product Specification 2SB705/705A/705B Silicon PNP Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SD745/745A/745B APPLICATIONS ・Audio frequency power amplifier ・Suitable for output stages of 60~120W audio

703a

Abstract: 2SD743 2SD743A
Contextual Info: Inchange Semiconductor Product Specification 2SD743 2SD743A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB703/703A APPLICATIONS ・Designed for use in audio frequency power amplifier ,low speed switching applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB709A SOT—23 TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter １．０ Power dissipation PCM : 0.2

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SB709A TRANSISTOR PNP FEATURES Power dissipation PCM: 0.2 1. BASE 2. EMITTER 3. COLLECTOR W (Tamb=25℃) Collector current ICM: -0.1 A Collector-base voltage

d743

Abstract: b703 B-703 703A 2SB703 2SD743
Contextual Info: 2SB703.703A 2SD743.743A 2 S B 7 0 3 ,7 0 3 A /2 S D 7 4 3 ,7 4 3 A P N P / N P N S * i £ * t » '> V □ > h ^ *» » PNP/NPN Silicon Triple Diffused Tronststor Audio Frequency Power Amplifier Low Speed Switching ? * » 0 / P A C K A G E D IM EN SIO N S FEATURES

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm +0.2 2.8 –0.3 1.45 +0.1 +0.2 0.95 0.95 2.9 –0.05 3 2 Collector to base voltage VCBO –45 V Collector to emitter voltage