2SB631
Abstract: 2SB631K
Contextual Info: JMnic Product Specification 2SB631 2SB631K Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD600/K ・High breakdown voltage VCEO:-100/-120V ・High current: -1A ・Low saturation voltage,excellent hFE linearity
|
Original
|
2SB631
2SB631K
O-126
2SD600/K
-100/-120V
2SB631
-50mA
2SB631K
|
PDF
|
2SD600
Abstract: 2SD600K 2sd_600 to126 2sd600k
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION •With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier
|
Original
|
2SD600
2SD600K
O-126
2SB631/631K
VCEO100/120V
2SD600
500mA
2SD600K
2sd_600
to126 2sd600k
|
PDF
|
2sb631
Abstract: 2sb631k
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION •With TO-126 package ·Complement to type 2SD600/K ·High breakdown voltage VCEO:-100/-120V ·High current: -1A ·Low saturation voltage,excellent hFE linearity
|
Original
|
2SB631
2SB631K
O-126
2SD600/K
-100/-120V
2SB631
-50mA
2sb631k
|
PDF
|
2sb631 transistor
Abstract: 2sd600* transistor 2SB631 2SD600 high gain low voltage PNP transistor transistor 2sb631 transistor PNP 10A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB631 DESCRIPTION •High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD600
|
Original
|
2SB631
-100V
2SD600
-50mA
-500mA
2sb631 transistor
2sd600* transistor
2SB631
2SD600
high gain low voltage PNP transistor
transistor 2sb631
transistor PNP 10A
|
PDF
|
2SB631
Abstract: 2SB631K
Contextual Info: Inchange Semiconductor Product Specification 2SB631 2SB631K Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD600/K ・High breakdown voltage VCEO:-100/-120V ・High current: -1A ・Low saturation voltage,excellent hFE linearity
|
Original
|
2SB631
2SB631K
O-126
2SD600/K
-100/-120V
2SB631
-500mA
-50mA
2SB631K
|
PDF
|
2SD600
Abstract: 2sd600* transistor hFE is transistor 2sd600 transistor 2SB631 2sb631 transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD600 DESCRIPTION •High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage: V BR CEO= 100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB631
|
Original
|
2SD600
2SB631
500mA
2SD600
2sd600* transistor
hFE is transistor
2sd600 transistor
2SB631
2sb631 transistor
|
PDF
|
2SD600
Abstract: 2sd600k
Contextual Info: Inchange Semiconductor Product Specification 2SD600 2SD600K Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier
|
Original
|
2SD600
2SD600K
O-126
2SB631/631K
VCEO100/120V
2SD600
500mA
2sd600k
|
PDF
|
2SB631K
Abstract: D 600K
Contextual Info: Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
|
Original
|
ENN346G
2SB631,
631K/
2SD600,
00V/120V,
100/120V,
2009B
631K/2SD600,
O-126
2SB631K
D 600K
|
PDF
|
transistor D600k
Abstract: transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor 2SB631 transistor B631K k b631k
Contextual Info: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
|
Original
|
ENN346G
2SB631
631K/2SD600
00V/120V,
100/120V,
2009B
2SB631,
631K/2SD600,
O-126
transistor D600k
transistor d600
D600K
D600k transistor
transistor b631
b631k
b631 transistor
transistor B631K
k b631k
|
PDF
|
2sb631 transistor
Abstract: transistor b631 transistor D600k 2sb631 2sd600
Contextual Info: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
|
Original
|
ENN346G
2SB631
631K/2SD600
00V/120V,
100/120V,
2009B
2SB631,
631K/2SD600,
O-126
2sb631 transistor
transistor b631
transistor D600k
2sd600
|
PDF
|
transistor D600k
Abstract: transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K 2SB631 D600
Contextual Info: Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
|
Original
|
2SB631
631K/2SD600
00V/120V,
100/120V,
2009B
2SB631,
631K/2SD600,
O-126
transistor D600k
transistor d600
transistor b631
D600k transistor
transistor B631K
D600K
b631 transistor
B631K
D600
|
PDF
|
D600K
Abstract: B631k b631 k b631k D600K to 126 2SB631 TO-126 D600 d600 2SB6 2Sd600
Contextual Info: Ordering num ber: EN346G 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors SANYO 100V/120V, 1A Low-Frequency Power Amp Applications i F e a tu re s • High breakdown voltage V ceo 100/120V, High current 1A. •Low saturation voltage, excellent hpE linearity.
|
OCR Scan
|
EN346G
2SB631
631K/2SD600
00V/120V,
100/120V,
2SB631,
2SB631K,
D600K
2SD60
D600K
B631k
b631
k b631k
D600K to 126
TO-126 D600
d600
2SB6
2Sd600
|
PDF
|
D600K
Abstract: B631K PNP 2SD 2SB631 631k D600K to 126
Contextual Info: Ordering number:EN34SG 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amp Applications F e a tu re s • High breakdown voltage Vceo 100/120V, High current 1A. • Low saturation voltage, excellent hpE linearity.
|
OCR Scan
|
EN34SG
2SB631
631K/2SD600
00V/120V,
100/120V,
2SB631,
2SB631K,
D600K
B631K,
D600K
B631K
PNP 2SD
631k
D600K to 126
|
PDF
|
2SB612K
Abstract: 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417
Contextual Info: smvo MICALESS T0-126ML TRANSISTORS F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting * Plastic-covered heat sink facilitating high-density mounting * Increased collector dissipation when a transistor alone is operated [T0-126ML:1. 3-1.51(18=25^)]
|
OCR Scan
|
T0-126ML)
T0-126ML
O-126
2SD826
2SB559
2SD439
2SB632K
2SB612K
2SB986
2SD1348
2SA1380
2SC3503
2sc4675
transistor TO-126 Outline Dimensions
2SA1249
2sa1507 Sanyo Semiconductor
2sc3417
|
PDF
|
|
|
transistor 2SB1142
Abstract: sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788
Contextual Info: SA0YO M IC A LE SS T 0-126M L T R A N SIST O R S F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting ♦ Plastic-covered heat sink facilitating high-density mounting ♦ Increased collector dissipation when a transistor alone is operated
|
OCR Scan
|
0-126M
T0-126ML)
T0-126ML
O-126
MT950123TR
transistor 2SB1142
sanyo transistor tt series
2SB612K
2SB1143
2SA1750
2sc3788
|
PDF
|
RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
|
OCR Scan
|
2SB1186
2SB1186A
2SA1304
2SA1306
2SA1305
2SB1274
2SB1015
2SB1133
2SB1287
2SB1185
RTIP144C
RTIN141C
RTIN141S
2SD947 equivalent
2SD612K
equivalent of transistor 2SA1115
RTIN241C
rtip241
2sd880 equivalent
RTIN140C
|
PDF
|
2SB630
Abstract: 2SB710 2SB628 2SB631 2SB632 2SB709 2SD597 63A50
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
|
OCR Scan
|
Tc-25
2SB630
2SB710
2SB628
2SB631
2SB632
2SB709
2SD597
63A50
|
PDF
|
2SA1392
Abstract: 2SA1450 2SA1683 2SB631 2SB632 2SB632K 2SC3383 2SC3708 2SC4414 2SD600
Contextual Info: General-application Transistors Absolut« maximum ratings Type No. Package typ Applications VCBO 00 Veto Electrical characteristics Ta = 25 t ICBOmax @VCB te PC (V) VEDO 00 (A) (W ) leso max (? ) UA) tra ve t 1C hFE® VCE- 1C VCB CO hFE VCE 00 VCE (V)
|
OCR Scan
|
2SA1683
2SC4414
2SA1392
2SA1450
2SC3383
2SC3708
FC140
2SC4452
2SA1416
2SAI417
2SB631
2SB632
2SB632K
2SD600
|
PDF
|
2SD675
Abstract: 2sd676 2SD674 2SD673 2SB631 2SD600 2SD612 2SD613 2SD638 2SD639
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
|
OCR Scan
|
2SD669
7c-25-C)
2SD673
2SD674
2SD675
2SD676
2SD675
2SD673
2SB631
2SD600
2SD612
2SD613
2SD638
2SD639
|
PDF
|
AUDIO AMPLIFIER
Abstract: audio amplifier POWER TRANSISTORS 2SA1766 2SC3650 2SC3651 2SC4390 2SC4705 2SK304 2SK404 2SK546
Contextual Info: Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 "C Icbo max @ VCB Applications VCBO (V) Vceo (V) VEBO (V) lc (A) PC (W ) Tj (C ) hFE (£• Vce - lc Icbo max (|iA) VCB (V) hFE 0.1/0.1 20/40 fT @ Vce - lc VcE (V) lc (mA) fr
|
OCR Scan
|
FC150
2SC3651
2SC3650
2SA1766
2SC4705
2SC4390
2SK596
2SK546
2SA1813/2SC4413)
2SK304
AUDIO AMPLIFIER
audio amplifier POWER TRANSISTORS
2SK404
|
PDF
|
2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
|
OCR Scan
|
4000HÂ
2SB415
2SB 710
2sc1061
2sd524
2sb504
HD68P01
2sb507
2sa762
2sc827
2SC1362
|
PDF
|
650nm laser diode 200mw
Abstract: DL-6147-040 laser diode DVD 100mw DL-3148-037 DL-3146-151 DL-3147-060 DL-3148-025 DL-7147-201 DL-3148-023 CIRCUIT iso 14001 sanyo
Contextual Info: SANYO Laser Diodes support advanced information society. SANYO has a wide range of laser diodes from 405nm to 830nm in the line-up. SANYO laser diodes are characterized by high power models for DVD±R/RW/-RAM and CD-R. There are also 635nm models for industrial applications such as laser display, bar-code scanners,
|
Original
|
405nm
830nm
635nm
808nm
650nm laser diode 200mw
DL-6147-040
laser diode DVD 100mw
DL-3148-037
DL-3146-151
DL-3147-060
DL-3148-025
DL-7147-201
DL-3148-023 CIRCUIT
iso 14001 sanyo
|
PDF
|
DL-3147-060
Abstract: 405nm 5mW laser diode DL-7147-201 new focus photodiode 1514 Diode Laser Red 650nm 6mm 5V 5mW DL-5146-251 DL-3148-023 CIRCUIT 650NM laser diode 5mw DL-3147-260 650nm 5mw module 6mm 5v
Contextual Info: LASER DIODE '05-03 Tottori SANYO Electric Co., Ltd Photonics Business Unit Laser sales Section 1-1-10 Ueno, Taito-ku, Tokyo, 110-8534, JAPAN Tel : +81-3-3837-6272 Fax : +81-3-3837-6390 Photonics Business Unit 5-318, Tachikawa-cho, Tottori-city, Tottori, 680-8634 JAPAN
|
Original
|
405nm
980nm
DL-3147-060
405nm 5mW laser diode
DL-7147-201
new focus photodiode 1514
Diode Laser Red 650nm 6mm 5V 5mW
DL-5146-251
DL-3148-023 CIRCUIT
650NM laser diode 5mw
DL-3147-260
650nm 5mw module 6mm 5v
|
PDF
|
DK53
Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240
|
Original
|
2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
DK53
dk52
BU724AS
mje2055
2n3055 replacement
BUX98PI
BD263
BD699
BD292
2N5037
|
PDF
|
