2SB1321 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features

2SB1321A

Abstract: 2SD1992A
Contextual Info: Transistor 2SB1321A Silicon PNP epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 0.15 ● Allowing supply with the radial taping. Large collector power dissipation PC. 600mW 1.0 ●

2SB1321A

Abstract: 2SD1992A
Contextual Info: Transistors 2SB1321A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 1.45 ±0.05 0.8 1.0 • Features 3.5±0.1 For general amplification Complementary to 2SD1992A 0.85 14.5±0.5 0.65 max. • Large collector power dissipation PC (600 mW)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1992A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1321A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SD1992

Abstract: 2SB1321 2SB1321A 2SD1992A
Contextual Info: Panasonic 2SB1321, 2SB1321A P N P ifc 'î'= if'> y ;u 7 ’i x - ^ - » 2SD1992, 2SD1992A ¿ =1 >7°'J ^ • # M • 2SD1992, 2SD1992A fc’n y~?' * > 9 ' ) - ^ T , • 7 ' J 7 Ì V - T — tf > ÿ'MiïSffîüfMo • 3 1 - M Í 1 * C0iâÂ?* S 600mW) ■

2SB1321A

Abstract: 2SD1992A 2sb1321
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) ue pl d in

2SB1321A

Abstract: 2SD1992A
Contextual Info: Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features (0.8) (1.0) 3.5±0.1 (0.7) 0.65 max. 14.5±0.5 (0.85) • Allowing supply with the radial taping

2SB1335A

Abstract: 2SB1333 2SB1365 2SD2021 2SB1320A 2SB1353 2sb1355 2SB1335 2SB1342 2sb1357
Contextual Info: - 86 - Ta=250C, *EPÍÍTc=25T; m 2SB1320A 2SB1321A 2SB1322A 2SB1323 2SB1324 2SB1325 2SB1326 2SB1333 2SB1334 2SB1334A î± % fôT fòT & T H# Hi* H # a—A a —A D— A a —A ¿0 010 03 D— A 2SB1335A 2SB1339 2SB1340 2SB1341 2SB1342 2SB1343 2SB1344 2SB1346

2SB1321A

Abstract: 2SD1992A DSA003720 DSA00372081
Contextual Info: Transistors 2SD1992A Silicon NPN epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 1.45 ±0.05 0.8 1.0 • Features 3.5±0.1 For general amplification Complementary to 2SB1321A 0.85 14.5±0.5 0.65 max. • Low collector to emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1992A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1321A Unit: mm • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features

2SB1321A

Abstract: 2SD1992A
Contextual Info: Transistors 2SB1321A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 1.45 ±0.05 0.8 1.0 • Features 3.5±0.1 For general amplification Complementary to 2SD1992A 0.85 14.5±0.5 0.65 max. • Large collector power dissipation PC (600 mW)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1992A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1321A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SB1321A

Abstract: 2SD1992A
Contextual Info: Transistors 2SD1992A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1321A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

2SB1321A

Abstract: 2SD1992A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1992A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1321A Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 (4.0) 2.5±0.1

2SB1321A

Abstract: 2SD1992A
Contextual Info: Transistor 2SD1992A Silicon NPN epitaxial planer type For low-frequency power strengthening and drive Complementary to 2SB1321A Unit: mm 0.15 ● Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping. 1.0 ● 0.8 • Features

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463