2SB1252 Search Results

2SB1252

Abstract: 2SD1895
Contextual Info: P o w er T ra n s is to rs 2SD1895 2SD1895 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB1252 U nit ! mm 5.2max. 1 5 .5 m a x . • Features <z> • O ptim u m for 90W hi-fi o u tp u t

Contextual Info: Power Transistors 2SD1895 2SD1895 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB1252 U n it ! mm • Features • • • • Optimum for 90W hi-fi output High DC current gain hi.E : 5000~30000

DIL 1AM

Abstract: unl darlington 100X2 2SB1252 2SD1892
Contextual Info: Pow er Tnansistors 2SD1892 2S D 1892 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Pow er Amplifier Com plem entary Pair with 2SB1252 Unit * mm 4.4max. 10.2max. 5.7max. • Features 2.9max.H • O ptim um fo r 3 5 W h i-fi o u tp u t

Contextual Info: Power Transistors 2SB1252 Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification 16.7±0.3 4.2±0.2 φ 3.1±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage Emitter open VCBO

2SB1252

Abstract: 2SD1892
Contextual Info: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage

2SB1252

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1252 Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 4.2±0.2 5.5±0.2 M Di ain sc te on na tin nc ue e/ d 2.7±0.2 Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1252 Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 4.2±0.2 5.5±0.2 M Di ain sc te on na tin nc ue e/ d 2.7±0.2 Symbol Rating Unit Collector-base voltage (Emitter open)

2SB1252

Abstract: 2SD1892
Contextual Info: Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SD1892 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 14.0±0.5 • Optimum for 35 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000

Contextual Info: Power Transistors 2SB1252 2SB1252 Silicon PNP Epitaxial Planar Darlington Type • Package Dimensions U n i t : mm Power Amplifier Complementary Pair with 2SD1872 ■Features 4 .4 m a x . 1 0 .2 m a x . 5 .7 m a x . 2 .9 m a x • O p tim u m fo r 35W hi-fi o u tp u t

2SB1252

Contextual Info: Power Transistors 2SB1252 Silicon PNP epitaxial planar type darlington Unit: mm Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −120 V Collector-emitter voltage (Base open) VCEO −100 V Emitter-base voltage (Collector open) VEBO

Contextual Info: Power T ransistors 2SD1892 2SD1892 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1252 U n it * mm 4.4m ax. 10.2m ax. • Features 5.7m ax. 2 .9 m a x > • Optimum for 35W hi-fi output • High DC c u rre n t gain

2SB1252

Abstract: 2SD1892
Contextual Info: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm 4.2±0.2 ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit 120 V 100 V 5 V 8 A 5 A Collector to base voltage

2SB1252

Abstract: 2SD1892 High frequency transistors
Contextual Info: Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington ● ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –100 V Emitter to base voltage VEBO –5 V

2SB1252

Abstract: 2SD1892 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD1892 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2SB1252 APPLICATIONS ·Power amplification ·Optimum for 35W high-fidelity output

Contextual Info: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage

2SB1252

Abstract: 2SD1892
Contextual Info: Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SD1892 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 14.0±0.5 • Optimum for 35 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000

2SB1252

Abstract: 2SD1892
Contextual Info: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SB1547

Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Contextual Info: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100

2SB1232

Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004

2SD1915

Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
Contextual Info: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for