2SB1030 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423, 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423A • Features  Package  Optimum for high-density mounting  Allowing supply with the radial taping

2SB1030A

Abstract: 2SD1423 2SD1423A 2sB103
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030A • Package  Optimum for high-density mounting  Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423 Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030 • Package  Optimum for high-density mounting  Allowing supply with the radial taping

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 3.0±0.2 4.0±0.2 • Features Parameter Ta=25˚C Symbol Collector to 2SB1030 base voltage 2SB1030A Collector to

2SB1030

Abstract: 2SD1423
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423 • Package  Optimum for high-density mounting  Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030A • Package  Optimum for high-density mounting  Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423A • Package M Di ain sc te on na tin nc ue e/ d  Features  Code NS-B1  Absolute Maximum Ratings Ta = 25°C

2SB1030A

Abstract: 2SD1423 2SD1423A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030A • Package  Optimum for high-density mounting  Allowing supply with the radial taping

2SD1423

Abstract: 2SB1030 2SB1030A 2SD1423A
Contextual Info: Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 3.0±0.2 4.0±0.2 • Features Parameter Ta=25˚C Symbol Collector to 2SD1423 base voltage 2SD1423A Collector to

2SB1030

Abstract: 2SD1423
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423 Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030 • Package  Optimum for high-density mounting  Allowing supply with the radial taping

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.0±0.2 0.8 3.0±0.2 • Absolute Maximum Ratings Parameter Collector to 2SD1423 base voltage 2SD1423A Collector to

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 0.8 3.0±0.2 2.0±0.2 0.75 max. Optimum for high-density mounting. Allowing supply with the radial taping.

2SB1039

Abstract: 2SB1045 2SB1038 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035
Contextual Info: - 72 - w. T a = 2 5 sC 1* E P Í Í T c = 2 T O m 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035 2SB1036 2SB1037 2SB1038 2SB1039 2SB1045 2SB1046 2SB1048 2SB1050 2SB Î052 2SB1054 2SB1055 2SB1056 2SB1057 2SB1058 2SB1059 2SB1061 2SB1062 2SB1063

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A transistor 2SB1030
Contextual Info: Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 3.0±0.2 4.0±0.2 • Features Parameter Ta=25˚C Symbol Collector to 2SB1030 base voltage 2SB1030A Collector to

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistors 2SD1423, 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5 • Optimum for high-density mounting

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistors 2SB1030, 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5 • Optimum for high-density mounting

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 3.0±0.2 4.0±0.2 • Features Parameter Ta=25˚C Symbol Collector to 2SD1423 base voltage 2SD1423A Collector to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030A • Features  Package  Optimum for high-density mounting  Allowing supply with the radial taping

Contextual Info: Transistors 2SB1030, 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 (0.8) M Di ain sc te on na tin nc ue e/ d 0.75 max. 15.6±0.5 • Optimum for high-density mounting

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030, 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2

2SA952L

Abstract: 2SA952K diode GP 30M 2SA666 2N330A HA7815 sot89 diode bm LOW-POWER SILICON PNP 2SA952-L G20b
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 >= 2N6009 BC328•16 BC328BP 2SA952L 2SB810H 2SB811H 2SBll19S 2SBl121S BC178BP BC178PBK 20 2SA950 2SA950 2SA950 2SB811F 2SB1030 BC178C BC258C KSA542 ~~~~~B 25 30 2SA952K 2SB810E BC328·25 BC328CP KSB564A 2SB811E

2SB1030

Abstract: 2SB1030A 2SD1423A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423A • Package  Optimum for high-density mounting  Allowing supply with the radial taping

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the