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2SB1015A Datasheets (4)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SB1015A		Toshiba	PNP transistor	Original	PDF	168.47KB	4
2SB1015(A)		Unknown	Silicon PNP Transistor	Scan	PDF	150.63KB	3
2SB1015A		Toshiba	Silicon PNP triple diffused type transistor for audio frequency amplifier applications	Scan	PDF	150.62KB	3
2SB1015A		Toshiba	TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE	Scan	PDF	150.62KB	3

2SB1015A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
B1015A Abstract: B1015 2SB1015A Contextual Info: 2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm • Low collector saturation voltage: VCE sat = −1.7 V (max) (IC = −3 A, IB = −0.3 A) • Collector power dissipation: PC = 25 W (Tc = 25°C)	Original	2sb1015a b1015a b1015	PDF
9y transistor Contextual Info: TOSHIBA 2SB1015A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 0 1 5A AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS U nit in mm 10 ± 0.3 M m? T,nw r i n ll p n tn r Si» t u r a fi n n V n l t n erp ' \jlli = _ 1- m 7' V’ Í M 9 Y Ì' ^3.2 ± Q.2	OCR Scan	2sb1015a 9y transistor	PDF
B1015A Abstract: 2SB1015A B1015 Contextual Info: 2SB1015A 東芝トランジスタシリコンPNP三重拡散形 2SB1015A ○ 低周波電力増幅用単位: mm • 飽和電圧が低い。 • コレクタ損失が大きい。 : PC = 25 W Tc = 25°C : VCE (sat) = −1.7 V (最大) (IC = −3 A, IB = −0.3 A)	Original	2sb1015a sc-67 2-10r1a b1015a +1b1015	PDF
2SB1015A Contextual Info: 2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm • Low collector saturation voltage: VCE sat = −1.7 V (max) (IC = −3 A, IB = −0.3 A) · Collector power dissipation: PC = 25 W (Tc = 25°C)	Original	2sb1015a	PDF
2SB1015A Contextual Info: T O S H IB A 2SB1015A T O SH IBA TRANSISTO R SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 0 1 5A Unit in mm A U D IO FREQUENCY PO W ER AM PLIFIER APPLICATIO NS • • Low Collector Saturation Voltage : v CE sat = -1 .7 V (Max.) dC = - 3 A, IB = -0 .3 A) : pc = 25 W (Tc = 25°C)	OCR Scan	2sb1015a	PDF
Contextual Info: TOSHIBA 2SB1015A T O SH IBA TRA NSISTO R SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 0 1 5A Unit in mm A U D IO FREQUENCY P O W ER A M PLIFIER APPLICATIO NS • • 10 ± 0 .3 Low Collector Saturation Voltage : VcE sat = -1 .7 V (Max.) dC = - 3 A, IB = -0 .3 A)	OCR Scan	2sb1015a	PDF
B1015A Abstract: 2SB1015A Contextual Info: 2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm • Low collector saturation voltage: VCE sat = −1.7 V (max) (IC = −3 A, IB = −0.3 A) • Collector power dissipation: PC = 25 W (Tc = 25°C)	Original	2sb1015a b1015a	PDF
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	bce0016f 2sa1941 amp circuit 2sc3303 2sd880 +7to3p package 2sa114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 toshiba bipolar power transistor amplifier design tta1943	PDF
2SC2625 Abstract: power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600 Contextual Info: STI Type: 2C5000 Industry Type: 2C5000 V CEO: ICBO ICEX: h FE: IC: V CE: Case Style: STI Type: 2N2453DIE Industry Type: 2C2453 V CEO: 30 ICBO ICEX: h FE: 150 IC: 1.0m V CE: Case Style: STI Type: 2N3807DIE Industry Type: 2C3807 V CEO: 60 ICBO ICEX: h FE: 300	Original	2c5000 2n2453die 2c2453 2n3807die +152c3807 2n6287die 2c6287 2n6295die 2c6295 2sc2625 power transistor 2sc2625 datasheet 2sc5000 2sa793 2sc2335 2sc2625 equivalent 2sc1116a 2sc2306 2sc2829 2sb600	PDF