2SA699 Q Search Results

2SC1226

Abstract: C1226 2SA699 226A 2SA699A 2SC1226A 2SA699 H
Contextual Info: Power Transistors 2SC1226, 2SCI 226A 2 S C 1 2 2 6 , 2 S C 1 2 2 6 A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W output in com plem entary pair with 2SA699, 2SA699A

2SA699

Abstract: 2SC1226 2SC1226A 2SA699A 335Panasonic sc1226
Contextual Info: 3ower T ransistors 2SC1226, 2SC1226A 2SC1226, 2SC1226A ¡Silicon NPN Epitaxial Planar Type tedium Power Amplifier Complementary Pair with 2SA699, 2SA699A Feature jf5W output in complementary pair with 2SA699, 2SA699A [•'Absolute Maximum Ratings Ta=25°C

2SA699

Abstract: 2SA699A 2SC1226 2SC1226A 100 HFK 2SA699 H
Contextual Info: PANASONIC INDL/ELEKiSEMI> 75C D | L ^ E f l S H 0DDfl734 b | -f-3 ^ 2SA699, 2SA699A 2SA699, 2 S A 6 9 9 A '> ij u > PN P x ^r'> t S i PNP Epitaxial Planar J \/ ~ f i s — ¿ - f i t / ifllijittim ffl/M edium Power Amplifier 2SC1226, 2SC1226A V i [ /Complementary Pair

2SC1226

Abstract: 2SA699 2SA699A 2SC1226A
Contextual Info: Power Transistors 2SA699, 2SA699A 2SA699, 2SA699A Silicon PNP Epitaxial Planar Type Package Dimensions Pow er Amplifier Com plem entary Pair with 2 S C 1 2 2 6 , 2 S C 1 2 2 6 A • Feature • 5W output in com plem entary pair with 2SC1226, 2SC1226A Absolute Maxim um Ratings T a = 2 5 °C

2SC1226

Abstract: 2SC1226A 699a 2SC1226 P 2SC1226 R
Contextual Info: SavantIC Semiconductor Product Specification 2SC1226 2SC1226A Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SC1226

Abstract: 2SC1226A 699A 2sc12
Contextual Info: Inchange Semiconductor Product Specification 2SC1226 2SC1226A Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SA699

Abstract: 2SA699A TRANSISTOR+2Sa+699
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA699 2SA699A DESCRIPTION •With TO-202 package ·Complement to type 2SC1226/1226A APPLICATIONS ·Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector

2SA699

Abstract: 2SA699A
Contextual Info: Inchange Semiconductor Product Specification 2SA699 2SA699A Silicon PNP Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SC1226/1226A APPLICATIONS ·Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector

2SA699

Abstract: 2SA699A 2SA699 Q
Contextual Info: JMnic Product Specification 2SA699 2SA699A Silicon PNP Power Transistors DESCRIPTION ・With TO-202 package ・Complement to type 2SC1226/1226A APPLICATIONS ・Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA699 Silicon PNP Transistors 99MAX + Features i ,3.20 ±0.2 DWith TO-202 package DComplement to type:2SC1226 • Absolute Maximum Ratings Tc=25

transistors 1U

Abstract: 2SA699 2SA699A
Contextual Info: AOK AOK Semiconductor P ro d u ct S pecification 2SA699 2S A 699A Silicon PNP Pow er Transistors DESCRIPTION • With T 0 2 0 2 package • Complement to type 2SC1226/1226A APPLICATIONS • Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1

2SC1226

Abstract: 335Panasonic 2SA699 2SA699A 2SC1226A 2SA699 H
Contextual Info: Power Transistors 2SC1226, 2SC1226A 2SC1226, 2SC1226A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S A 699, 2SA 699A

2SA699

Abstract: 2SA699A 2SC1226A 2SA699 H 2SC1226 2SA699 Q
Contextual Info: Power Transistors 2SA 699, 2S A 699A 2SA699, 2SA699A Silicon PNP Epitaxial Planar Type Package Dim ensions P ow er Am plifier C om plem entary Pair with 2 S C 1 2 2 6 , 2 S C 1 2 2 6 A U n it 10.0 mm 0 .5 ± 0 .0 5 • Feature • 5W output in complementary pair with 2SC1226, 2SC1226A

2SB1599

Abstract: 2SA699 2SA699A 2SD2457 2SA699 H
Contextual Info: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

2SC1211

Abstract: 2SA640 2SA712 2SA697 TRANSISTOR 2Sa640 138B 2SA673 2SA699 2SA743 2SA640 M
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

pin configuration transistor bd140

Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —