2SC1226
Abstract: C1226 2SA699 226A 2SA699A 2SC1226A 2SA699 H
Contextual Info: Power Transistors 2SC1226, 2SCI 226A 2 S C 1 2 2 6 , 2 S C 1 2 2 6 A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W output in com plem entary pair with 2SA699, 2SA699A
|
OCR Scan
|
2sc12262sc1226a2sa6992sa699a+3c1226226a2sa699 h
|
PDF
|
2SA699
Abstract: 2SC1226 2SC1226A 2SA699A 335Panasonic sc1226
Contextual Info: 3ower T ransistors 2SC1226, 2SC1226A 2SC1226, 2SC1226A ¡Silicon NPN Epitaxial Planar Type tedium Power Amplifier Complementary Pair with 2SA699, 2SA699A Feature jf5W output in complementary pair with 2SA699, 2SA699A [•'Absolute Maximum Ratings Ta=25°C
|
OCR Scan
|
2sc12262sc1226a2sa6992sa699a+2335panasonicsc1226
|
PDF
|
2SA699
Abstract: 2SA699A 2SC1226 2SC1226A 100 HFK 2SA699 H
Contextual Info: PANASONIC INDL/ELEKiSEMI> 75C D | L ^ E f l S H 0DDfl734 b | -f-3 ^ 2SA699, 2SA699A 2SA699, 2 S A 6 9 9 A '> ij u > PN P x ^r'> t S i PNP Epitaxial Planar J \/ ~ f i s — ¿ - f i t / ifllijittim ffl/M edium Power Amplifier 2SC1226, 2SC1226A V i [ /Complementary Pair
|
OCR Scan
|
2sa6992sa699a2sc12262sc1226a+2100 hfk2sa699 h
|
PDF
|
2SC1226
Abstract: 2SA699 2SA699A 2SC1226A
Contextual Info: Power Transistors 2SA699, 2SA699A 2SA699, 2SA699A Silicon PNP Epitaxial Planar Type Package Dimensions Pow er Amplifier Com plem entary Pair with 2 S C 1 2 2 6 , 2 S C 1 2 2 6 A • Feature • 5W output in com plem entary pair with 2SC1226, 2SC1226A Absolute Maxim um Ratings T a = 2 5 °C
|
OCR Scan
|
2sa6992sa699a2sc12262sc1226a |
PDF
|
2SC1226
Abstract: 2SC1226A 699a 2SC1226 P 2SC1226 R
Contextual Info: SavantIC Semiconductor Product Specification 2SC1226 2SC1226A Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base
|
Original
|
2sc12262sc1226ao-2022sa699/699a+3699a2sc1226 p2sc1226 r
|
PDF
|
2SC1226
Abstract: 2SC1226A 699A 2sc12
Contextual Info: Inchange Semiconductor Product Specification 2SC1226 2SC1226A Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base
|
Original
|
2sc12262sc1226ao-2022sa699/699a+2699a2sc12
|
PDF
|
2SA699
Abstract: 2SA699A TRANSISTOR+2Sa+699
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA699 2SA699A DESCRIPTION •With TO-202 package ·Complement to type 2SC1226/1226A APPLICATIONS ·Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector
|
Original
|
2sa6992sa699ao-2022sc1226/1226a+1transistor+2sa+699
|
PDF
|
2SA699
Abstract: 2SA699A
Contextual Info: Inchange Semiconductor Product Specification 2SA699 2SA699A Silicon PNP Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SC1226/1226A APPLICATIONS ·Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector
|
Original
|
2sa6992sa699ao-2022sc1226/1226a |
PDF
|
2SA699
Abstract: 2SA699A 2SA699 Q
Contextual Info: JMnic Product Specification 2SA699 2SA699A Silicon PNP Power Transistors DESCRIPTION ・With TO-202 package ・Complement to type 2SC1226/1226A APPLICATIONS ・Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol
|
Original
|
2sa6992sa699ao-2022sc1226/1226a+12sa699 q
|
PDF
|
|
Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA699 Silicon PNP Transistors 99MAX + Features i ,3.20 ±0.2 DWith TO-202 package DComplement to type:2SC1226 • Absolute Maximum Ratings Tc=25
|
Original
|
2sa69999maxo-2022sc1226 |
PDF
|
transistors 1U
Abstract: 2SA699 2SA699A
Contextual Info: AOK AOK Semiconductor P ro d u ct S pecification 2SA699 2S A 699A Silicon PNP Pow er Transistors DESCRIPTION • With T 0 2 0 2 package • Complement to type 2SC1226/1226A APPLICATIONS • Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1
|
OCR Scan
|
2sa6992sa699ao-2022sc1226/1226a+1transistors 1u
|
PDF
|
2SC1226
Abstract: 335Panasonic 2SA699 2SA699A 2SC1226A 2SA699 H
Contextual Info: Power Transistors 2SC1226, 2SC1226A 2SC1226, 2SC1226A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S A 699, 2SA 699A
|
OCR Scan
|
2sc12262sc1226a2sa6992sa699a+2335panasonic2sa699 h
|
PDF
|
2SA699
Abstract: 2SA699A 2SC1226A 2SA699 H 2SC1226 2SA699 Q
Contextual Info: Power Transistors 2SA 699, 2S A 699A 2SA699, 2SA699A Silicon PNP Epitaxial Planar Type Package Dim ensions P ow er Am plifier C om plem entary Pair with 2 S C 1 2 2 6 , 2 S C 1 2 2 6 A U n it 10.0 mm 0 .5 ± 0 .0 5 • Feature • 5W output in complementary pair with 2SC1226, 2SC1226A
|
OCR Scan
|
2sa6992sa699a2sc12262sc1226a+22sa699 h2sa699 q
|
PDF
|
2SB1599
Abstract: 2SA699 2SA699A 2SD2457 2SA699 H
Contextual Info: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment
|
Original
|
2sb15992sd24572sa699a50mhz+22sa6992sa699 h
|
PDF
|
|
|
2SC1211
Abstract: 2SA640 2SA712 2SA697 TRANSISTOR 2Sa640 138B 2SA673 2SA699 2SA743 2SA640 M
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English
|
OCR Scan
|
27mhz770mhz2sc12112sa640+82sa7122sa697transistor 2sa640138b2sa6732sa6992sa7432sa640 m
|
PDF
|
2SA699
Abstract: 2SA699A 2SB1599 2SD2457 2SA699 H
Contextual Info: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment
|
Original
|
2sb15992sd24572sa6992sa699a+12sa699 h
|
PDF
|
BD179-10 equivalent
Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
|
Original
|
bd179bd180bd179-10tip73b+14tip74tip74atip74btip75tip75abd179-10 equivalentbu1082sa10462sc7bdx54bux98abu326bu100bul1
|
PDF
|
pin configuration transistor bd140
Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139
|
Original
|
bd136bd138bd140bd140-10+16tip73btip74tip74atip74btip75tip75apin configuration transistor bd1402sd669 equivalentbuv44bd140 equivalent transistormje15020bd140 equivalentbd250c equivalentrca1222n6045 npn power darlingtontransistor bd 136
|
PDF
|
2N5037
Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi
|
Original
|
bd808bd810tip73btip74+16tip74atip74btip75tip75atip75btip75c2n50372sc19032sc2159mje15033 replacementbd7782mje2050sdt76052sa835bd279svt6251
|
PDF
|
mje340 equivalent
Abstract: 2SC7 BD801 transistor bd 242 CASE 221A-04 BD8015 rca3055 equivalent BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 Plastic High Power Silicon NPN Transistor 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 1.0 Adc
|
Original
|
bd801tip73btip74tip74a+14tip74btip75tip75atip75btip75cmje340 equivalent2sc7transistor bd 242case 221a-04bd8015rca3055 equivalentbu326bu108bu100
|
PDF
|
BU108
Abstract: 2SC7 BD 148 transistor Bd 458 2SC1419 BU326 BU100 2SC101
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD165 BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
|
Original
|
bd165bd169tip73btip74+14tip74atip74btip75tip75atip75btip75cbu1082sc7bd 148transistor bd 4582sc1419bu326bu1002sc101
|
PDF
|
BU108
Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
|
Original
|
bd180bd179tip73btip74+13tip74atip74btip75tip75atip75bbu1082sd1816bdx54motorola mj3000mjd42c equivalentbu326bu1002n5631
|
PDF
|
BUS48AP
Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
|
Original
|
bd166bd165tip73btip74+15tip74atip74btip75tip75atip75bbus48ap2sc1381mje15033 replacement2sa698bd477bd139.162n3072sc12242sd549bd139.10
|
PDF
|
Circuit details of BD237 equivalent
Abstract: BD237-10 BD237 similar BU108 bd237 equivalent 2SC7 bd237 pin assignment 2SD424 2SC495 BUX98A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD237 Plastic Medium Power Silicon NPN Transistor 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
|
Original
|
bd237tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488circuit details of bd237 equivalentbd237-10bd237 similarbu108bd237 equivalent2sc7bd237 pin assignment2sd4242sc495bux98a
|
PDF
|