2SA699 Q Search Results

2SC1226

Abstract: C1226 2SA699 226A 2SA699A 2SC1226A 2SA699 H
Contextual Info: Power Transistors 2SC1226, 2SCI 226A 2 S C 1 2 2 6 , 2 S C 1 2 2 6 A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W output in com plem entary pair with 2SA699, 2SA699A

2SA699

Abstract: 2SC1226 2SC1226A 2SA699A 335Panasonic sc1226
Contextual Info: 3ower T ransistors 2SC1226, 2SC1226A 2SC1226, 2SC1226A ¡Silicon NPN Epitaxial Planar Type tedium Power Amplifier Complementary Pair with 2SA699, 2SA699A Feature jf5W output in complementary pair with 2SA699, 2SA699A [•'Absolute Maximum Ratings Ta=25°C

2SC1226

Abstract: 2SA699 2SA699A 2SC1226A
Contextual Info: Power Transistors 2SA699, 2SA699A 2SA699, 2SA699A Silicon PNP Epitaxial Planar Type Package Dimensions Pow er Amplifier Com plem entary Pair with 2 S C 1 2 2 6 , 2 S C 1 2 2 6 A • Feature • 5W output in com plem entary pair with 2SC1226, 2SC1226A Absolute Maxim um Ratings T a = 2 5 °C

2SC1226

Abstract: 2SC1226A 699a 2SC1226 P 2SC1226 R
Contextual Info: SavantIC Semiconductor Product Specification 2SC1226 2SC1226A Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SC1226

Abstract: 2SC1226A 699A 2sc12
Contextual Info: Inchange Semiconductor Product Specification 2SC1226 2SC1226A Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SA699

Abstract: 2SA699A TRANSISTOR+2Sa+699
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA699 2SA699A DESCRIPTION •With TO-202 package ·Complement to type 2SC1226/1226A APPLICATIONS ·Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector

2SA699

Abstract: 2SA699A
Contextual Info: Inchange Semiconductor Product Specification 2SA699 2SA699A Silicon PNP Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SC1226/1226A APPLICATIONS ·Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector

2SA699

Abstract: 2SA699A 2SA699 Q
Contextual Info: JMnic Product Specification 2SA699 2SA699A Silicon PNP Power Transistors DESCRIPTION ・With TO-202 package ・Complement to type 2SC1226/1226A APPLICATIONS ・Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA699 Silicon PNP Transistors 99MAX + Features i ,3.20 ±0.2 DWith TO-202 package DComplement to type:2SC1226 • Absolute Maximum Ratings Tc=25

transistors 1U

Abstract: 2SA699 2SA699A
Contextual Info: AOK AOK Semiconductor P ro d u ct S pecification 2SA699 2S A 699A Silicon PNP Pow er Transistors DESCRIPTION • With T 0 2 0 2 package • Complement to type 2SC1226/1226A APPLICATIONS • Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1

2SC1226

Abstract: 335Panasonic 2SA699 2SA699A 2SC1226A 2SA699 H
Contextual Info: Power Transistors 2SC1226, 2SC1226A 2SC1226, 2SC1226A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S A 699, 2SA 699A

2SA699

Abstract: 2SA699A 2SC1226A 2SA699 H 2SC1226 2SA699 Q
Contextual Info: Power Transistors 2SA 699, 2S A 699A 2SA699, 2SA699A Silicon PNP Epitaxial Planar Type Package Dim ensions P ow er Am plifier C om plem entary Pair with 2 S C 1 2 2 6 , 2 S C 1 2 2 6 A U n it 10.0 mm 0 .5 ± 0 .0 5 • Feature • 5W output in complementary pair with 2SC1226, 2SC1226A

2SA699

Abstract: 2SA699A 2SB1599 2SD2457
Contextual Info: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 4.5±0.1 1.6±0.2 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 * 0.4±0.04 Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage

2SC1211

Abstract: 2SA640 2SA712 2SA697 TRANSISTOR 2Sa640 138B 2SA673 2SA699 2SA743 2SA640 M
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

mje340 equivalent

Abstract: 2SC7 BD801 transistor bd 242 CASE 221A-04 BD8015 rca3055 equivalent BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 Plastic High Power Silicon NPN Transistor 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 1.0 Adc

BU108

Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

BUS48AP

Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40

BU108

Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS

BU108

Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A

transistor 3569

Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —

transistor MJ2501

Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc

automotive ignition tip162

Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —

BU108

Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc