2SA648 TRANSISTOR Search Results

2sa648 transistor

Abstract: 2SA648
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA648 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio power amplifier applications.

2SA648

Contextual Info: SavantIC Semiconductor Product Specification 2SA648 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For low frequency and large power switching applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

Contextual Info: t One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA648 DESCRIPTION • Collector-Emitter Breakdown Voltage:V ( BR)CEO=-120V(Min.) • Wide Area of Safe Operation

2SA648

Contextual Info: AOK AOK Semiconductor Product Specification 2SA648 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Wide area of safe operation APPLICATIONS • For low frequency and large power s w itc h in g a p p lic a tio n s PINNING see Fig.2 PIN

2sc897 hitachi

Abstract: nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE «T ON) Min (Hz) r ICBO Max (A) (CE)sat Max (s) Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .

STC5610

Abstract: B0536 2n3408 2SA614 2SA616 BD272 BD436A STP60S STC5204 D634
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

D634 transistor

Abstract: 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2SA614

Abstract: 2SA616 2sc113 STC5204
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2sa648 transistor

Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

BU108

Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS

BU108

Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A

transistor 3569

Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —

transistor MJ2501

Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc

automotive ignition tip162

Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —

Motorola case 77

Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc

2SA1046

Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

2SC124

Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS

electronic ballast with MJE13003

Abstract: BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS The BUD43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light

2N5037

Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi

c 3421 transistor

Abstract: BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Horizontal Deflection Transistor . . . designed for use in televisions. • • • • Collector–Emitter Voltages VCES 1500 Volts Fast Switching — 400 ns Typical Fall Time Low Thermal Resistance 1_C/W Increased Reliability

MJ15003 300 watts amplifier

Abstract: ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High Voltage Power Transistors MJD340* PNP MJD350* Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *Motorola Preferred Device DPAK For Surface Mount Applications

TIP35C transistor replacement

Abstract: TIP35C replacement 2N3055 equivalent BU108 D45H11 equivalent replacement BDX54 2n3772 EQUIVALENT BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V

D72F5T2 NPN

Abstract: silicon npn 2SD716 transistor BD4202 bd139 3v BU108 2N5978 NPN pin configuration NPN transistor tip41c 724 motorola NPN Transistor with heat pad MJE15029 audio output TRANSISTOR PNP 2SB686
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE15028* MJE15030* PNP MJE15029* MJE15031* Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hFE = 40 Min @ IC = 3.0 Adc

BU108

Abstract: D45C electronic ballast with MJE13003 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 40 WATTS The BUL43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light