2SA473 O Search Results

2SA473

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA473 POWER AMPLIFIER APPLICATIONS. CAR ''^1? AMD CAR STEREO OUTPUT STAGE APPLICATIONS FEATURES : . Good Linearity of tvpj?. . Complementary to 2SC1173- MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage SYMBOL RATING

transistor 2sa473

Abstract: transistor 2sc1173 2SA473 2sc1173 2SA473 transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA473 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -30V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1173 APPLICATIONS ·Power amplifier applications.

2SA473

Abstract: 2SA473 equivalent 2sc1173 ic 10w power amplifier 2SA473 O
Contextual Info: Inchange Semiconductor Product Specification 2SA473 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1173 ·Collector current :IC=-3A ·Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ·Low frequency power amplifier

2SC1173

Abstract: 2SA473
Contextual Info: Product Specification www.jmnic.com 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier ・Power regulator

Contextual Info: JMnic Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier ・Power regulator

2sc1173

Abstract: 2SA473
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC1173 U n i t 10.3 MAX. POWER AMPLIFIER APPLICATIONS, i tí m m 0 3 .6 ± 0 .2 CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpE• Complementary to 2SA473 and 5 Watts Output Applications.

2sc1173

Abstract: 2sc1173 equivalent 2sc1173 equivalent Silicon NPN Power Transistors 2SA473 ic 10w power amplifier
Contextual Info: Inchange Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier

2sa473

Abstract: 2SA473 O 2SC1173 2SA473 0
Contextual Info: SavantIC Semiconductor Product Specification 2SA473 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1173 ·Collector current :IC=-3A ·Collector dissipation:PC=10W@TC=25 APPLICATIONS ·Low frequency power amplifier ·Power regulator

2SC1173

Abstract: 2sc1173 equivalent Silicon NPN Power Transistors 2SA473 2sc1173 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA473 ·Collector current :IC=3A ·Collector dissipation:PC=10W@TC=25? APPLICATIONS ·Low frequency power amplifier ·Power regulator

Contextual Info: 2SC1173 SILICO N NPN E P IT A X IA L TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpE* • Complementary to 2SA473 and 5 Watts Output 1.5MAX. 07 6 Applications.

2SA554

Abstract: 2sa584 2SA553 2SA564 2SA429GTM 2sa525 2SA552 2SA639S 2SC519A 2SC520A
Contextual Info: 1A m % fö <Ta=25^,*EPiäTc=25t; m 2 SA 119 2SA429GTM 2SA473 2SA503 2SA504 2SA510 2SA512 2SA524 2SA553 2SA554 2SA558 2SA559 2SA559A 2SA562TM 2SA564 2SA564A 2SA580 2SA594 2SA6QSKNP 2SA608NP 2SA608SPA 2SA625 2SA638S 2SA639S 2SA656A 2SA657A 2SA658A 2SA6Î3 2SA673A

2SA473

Abstract: 2SC1173 2SA473 O
Contextual Info: AOK AOK Semiconductor Product Specification 2SA473 S ilicon PNP Power Transistors DESCRIPTION • W ith T 0 2 2 0 package • C om plem ent to type 2SC1173 • C ollector current :IC=-3A • C ollector dissipation:Pc =10W @ Tc=25‘C APPLICATIONS • Low frequency pow er am plifier

2SC4793

Abstract: 2SA1869 2SC3498 2SA1306A 2sa1306 2SC4935 2sc2238 2SC4793 2sa1837 2SC2238 2SA968 2SC36I2
Contextual Info: •MAINTENANCE TYPE LIST T h e fo llo w in g D evices a re p la n n e d fo r p h a se o u t as o f J u n e 1994, an d are a v ailab le o n ly as m ain ten an ce p a rts. F o r in s ta lla tio n s , please use later device a lten ativ es as in d ic a te d .

2SB415

Abstract: sanyo 2sb509 NEC B 536 2sb631 hitachi 2SA1284 2sa966 2SB631 2SB557 TOSHIBA 2SA934 2SB661
Contextual Info: - 46 - S € Type No. tt V - - 2SB 521 „ 2SB 522 a € Maniif. , SANYO T O SHIBA a NEC a b HITACHI * ± a F U J ITSU fâ T MATSUSHITA □ MITSUBISHI — A ROHM 2SB507 2SB596 2SB856 2SB1291 2SB508 2SB596 LB 2SB856 2SB1291 2SA1069 2 SB 523 , = S 2SB632 2SB596

2SD525

Contextual Info: -3 7 TO-22QAB P A CK A G E S E R IE S O 1X1 TO-220AB X M OD 3> r*n W M ! H ri ' Application IC Type No. NPN T V Chroma Out O W *MAX. X v CE0 h'Ft; PC v C B 0 TcpS B ’C PNP <A) (V) 2SC1569 (W) f-pTYP. v CE(sat) M A X . V CE >c (V) (AJ •c •b <V) (A)

2SC789

Abstract: 2sc1060 2SC1061 250314 2SD331 2SA473 2SA489 2SA490 2SA670 2SA671
Contextual Info: TYPE NO. P O L A R IT Y Pow er Transistors CASE M A X IM U M r a t in g s 'c pd IW A) V CEO (V) V C E (S A T ) h fe min max 'c (A) VCE (V) max 'c (V) (A) fT min COM PLE­ (M Hz) TYPE 2SC789 2SC790 2SC1060 2SC1061 2 S C 1 17 3 2SC1626 N N N N N N T O -22 0

2SA473

Abstract: 2SC1173 A003 AC75 B1030 230AB 2sa47 354 OPTO
Contextual Info: TOSHIBA -CDISCRETE/0PT03- 9097250 TOSHIBA ~Sb D F | cìOc]7aSD D0D7MM0 S 56C <D I S C R E T E / O P T O > 074^0 S IL IC O N NPN E P IT A X IA L TYPE PCT P ROCESS POWER AMPLIFIER APPLICATIONS. CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES:

2s8698

Abstract: 2SA634A 2sa1015 2sB1064 2SA715 2SA836 2SA970 2SA854 2S8834 2SA1039
Contextual Info: 10 - s « Type No. *t * 2SA 635 * 2SA 636 * 2SA 636A < s a a a a * 2SA 637 «5 T 2SA 638 B 2SA 638S nr 03 2SA a « * 2 SA 633 * 2SA 634 ^ 2SA 639S £ H Manuf. a a a a a 2SA 640 ^ 0 a * 2SA 641 .✓ * 2SA 642 - * 2 SA 643 - 0 « a a s a * 2SA 644 M TO S H I B A

2SC1173

Abstract: Transistor 2sC1173 2SC 1173 2SC1173-0 IC0003 2SA473 AC75 Produced by Perfect Crystal Device Technology 2SC1173-Y
Contextual Info: ^ 2 s c 1173 i/U D > N P N X ^ á F 2 /? ;U h ^ > 5 ;^ P C T S a : ^ I L IC O N NPN EPITAXIAL o « * « « « o P o w e r Ampl i f i e r A p p l i cations o Output Stage Application of Car Radio and Stereo TRANSISTOR 2 B A 4 73 <n =. V -7 V ^ y 9 V X-

2SA473

Abstract: LEA-5A 2sa473-0 transistor 2sa473 2SA amplifier lineal 2SC1173 Produced by Perfect Crystal Device Technology transistor 2SA
Contextual Info: 473 2SA * zj'j3ypNPT£9*ì;j>}bB^= ?yvz5> pcTm ^SILIC ON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) mm o * O ii- 7 * o o Power A m p l if i e r A p p l i c a t i o n s O u tp u t S t a g e A p p l i c a t i o n o f C ar R a d io an d C ar S t e r e o Z SC 1173

2SB512P

Abstract: tip318 TIP31N TIP308 MH0870 TIP298 2sb435 2sc1060 MH8106 MH8500
Contextual Info: TYPE NO. P O L A R ITY Power Transistors M A X IM U M R A TIN G S Pd 'c W A) V C E(SA T) h fe V CEO (V) 'c min max (A) V CE (V) 1 0.5 0.2 0.2 1 1 max 'c fT min (V) (A) 2 2 2 2 2 2 0.8 0.8 0.5 0.5 1.2 0.8 2 2 0.5 0.5 3 2 5 30 50 50 5 5 (MHz) COMPLE­ M ENTARY

KT835A

Abstract: b0330 MJ032 MJ-03 b0362 2SA699A matsua 2N3171 KT83 kt835 M0810
Contextual Info: POWER SILICON PNP Item Number Part Number 10 15 20 25 30 >= 1 A, SK3624 2N6421 MJ3584 BUX66A BUX66A 2N6211 MJ3585 2N6422 MJ4240 MJ4240 2 2 BUX66B BUX66B BUX66C BUX66C 2N6212 2SA1009M SPT6145 2SA1009K 2SA1009J 2 2N6213 2N6214 2SA1009AM 2SA1009AL 2SA1009AK 2SA1412Z

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

2SC1124

Abstract: 2SC1177 2SC1137 2SC1145 2SC1116A 2SC1130 2sc1127 2SC1147 2sc1186 2SC1111
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC1101 1100 5 1A 50W(Tc=25ºC) 150 60 15 500 2SC1102 300 7 100 11W(Tc=25ºC) 150