2SA473 O Search Results

2SA473

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA473 POWER AMPLIFIER APPLICATIONS. CAR ''^1? AMD CAR STEREO OUTPUT STAGE APPLICATIONS FEATURES : . Good Linearity of tvpj?. . Complementary to 2SC1173- MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage SYMBOL RATING

2SA473

Abstract: 2SA473 equivalent 2sc1173 ic 10w power amplifier 2SA473 O
Contextual Info: Inchange Semiconductor Product Specification 2SA473 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1173 ·Collector current :IC=-3A ·Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ·Low frequency power amplifier

2SC1173

Abstract: 2SA473
Contextual Info: Product Specification www.jmnic.com 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier ・Power regulator

Contextual Info: JMnic Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier ・Power regulator

2sc1173

Abstract: 2SA473
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC1173 U n i t 10.3 MAX. POWER AMPLIFIER APPLICATIONS, i tí m m 0 3 .6 ± 0 .2 CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpE• Complementary to 2SA473 and 5 Watts Output Applications.

2sc1173

Abstract: 2sc1173 equivalent 2sc1173 equivalent Silicon NPN Power Transistors 2SA473 ic 10w power amplifier
Contextual Info: Inchange Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier

2sa473

Abstract: 2SA473 O 2SC1173 2SA473 0
Contextual Info: SavantIC Semiconductor Product Specification 2SA473 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1173 ·Collector current :IC=-3A ·Collector dissipation:PC=10W@TC=25 APPLICATIONS ·Low frequency power amplifier ·Power regulator

2SC1173

Abstract: 2sc1173 equivalent Silicon NPN Power Transistors 2SA473 2sc1173 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA473 ·Collector current :IC=3A ·Collector dissipation:PC=10W@TC=25? APPLICATIONS ·Low frequency power amplifier ·Power regulator

2SA554

Abstract: 2sa584 2SA553 2SA564 2SA429GTM 2sa525 2SA552 2SA639S 2SC519A 2SC520A
Contextual Info: 1A m % fö <Ta=25^,*EPiäTc=25t; m 2 SA 119 2SA429GTM 2SA473 2SA503 2SA504 2SA510 2SA512 2SA524 2SA553 2SA554 2SA558 2SA559 2SA559A 2SA562TM 2SA564 2SA564A 2SA580 2SA594 2SA6QSKNP 2SA608NP 2SA608SPA 2SA625 2SA638S 2SA639S 2SA656A 2SA657A 2SA658A 2SA6Î3 2SA673A

2SA473

Abstract: 2SC1173 2SA473 O
Contextual Info: AOK AOK Semiconductor Product Specification 2SA473 S ilicon PNP Power Transistors DESCRIPTION • W ith T 0 2 2 0 package • C om plem ent to type 2SC1173 • C ollector current :IC=-3A • C ollector dissipation:Pc =10W @ Tc=25‘C APPLICATIONS • Low frequency pow er am plifier

2SC4793

Abstract: 2SA1869 2SC3498 2SA1306A 2sa1306 2SC4935 2sc2238 2SC4793 2sa1837 2SC2238 2SA968 2SC36I2
Contextual Info: •MAINTENANCE TYPE LIST T h e fo llo w in g D evices a re p la n n e d fo r p h a se o u t as o f J u n e 1994, an d are a v ailab le o n ly as m ain ten an ce p a rts. F o r in s ta lla tio n s , please use later device a lten ativ es as in d ic a te d .

2SB415

Abstract: sanyo 2sb509 NEC B 536 2sb631 hitachi 2SA1284 2sa966 2SB631 2SB557 TOSHIBA 2SA934 2SB661
Contextual Info: - 46 - S € Type No. tt V - - 2SB 521 „ 2SB 522 a € Maniif. , SANYO T O SHIBA a NEC a b HITACHI * ± a F U J ITSU fâ T MATSUSHITA □ MITSUBISHI — A ROHM 2SB507 2SB596 2SB856 2SB1291 2SB508 2SB596 LB 2SB856 2SB1291 2SA1069 2 SB 523 , = S 2SB632 2SB596

2SD525

Contextual Info: -3 7 TO-22QAB P A CK A G E S E R IE S O 1X1 TO-220AB X M OD 3> r*n W M ! H ri ' Application IC Type No. NPN T V Chroma Out O W *MAX. X v CE0 h'Ft; PC v C B 0 TcpS B ’C PNP <A) (V) 2SC1569 (W) f-pTYP. v CE(sat) M A X . V CE >c (V) (AJ •c •b <V) (A)

2SC789

Abstract: 2sc1060 2SC1061 250314 2SD331 2SA473 2SA489 2SA490 2SA670 2SA671
Contextual Info: TYPE NO. P O L A R IT Y Pow er Transistors CASE M A X IM U M r a t in g s 'c pd IW A) V CEO (V) V C E (S A T ) h fe min max 'c (A) VCE (V) max 'c (V) (A) fT min COM PLE­ (M Hz) TYPE 2SC789 2SC790 2SC1060 2SC1061 2 S C 1 17 3 2SC1626 N N N N N N T O -22 0

2SC1173

Abstract: Transistor 2sC1173 2SC 1173 2SC1173-0 IC0003 2SA473 AC75 Produced by Perfect Crystal Device Technology 2SC1173-Y
Contextual Info: ^ 2 s c 1173 i/U D > N P N X ^ á F 2 /? ;U h ^ > 5 ;^ P C T S a : ^ I L IC O N NPN EPITAXIAL o « * « « « o P o w e r Ampl i f i e r A p p l i cations o Output Stage Application of Car Radio and Stereo TRANSISTOR 2 B A 4 73 <n =. V -7 V ^ y 9 V X-

2SA473

Abstract: LEA-5A 2sa473-0 transistor 2sa473 2SA amplifier lineal 2SC1173 Produced by Perfect Crystal Device Technology transistor 2SA
Contextual Info: 473 2SA * zj'j3ypNPT£9*ì;j>}bB^= ?yvz5> pcTm ^SILIC ON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) mm o * O ii- 7 * o o Power A m p l if i e r A p p l i c a t i o n s O u tp u t S t a g e A p p l i c a t i o n o f C ar R a d io an d C ar S t e r e o Z SC 1173

2SB512P

Abstract: tip318 TIP31N TIP308 MH0870 TIP298 2sb435 2sc1060 MH8106 MH8500
Contextual Info: TYPE NO. P O L A R ITY Power Transistors M A X IM U M R A TIN G S Pd 'c W A) V C E(SA T) h fe V CEO (V) 'c min max (A) V CE (V) 1 0.5 0.2 0.2 1 1 max 'c fT min (V) (A) 2 2 2 2 2 2 0.8 0.8 0.5 0.5 1.2 0.8 2 2 0.5 0.5 3 2 5 30 50 50 5 5 (MHz) COMPLE­ M ENTARY

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

2SC1124

Abstract: 2SC1177 2SC1137 2SC1145 2SC1116A 2SC1130 2sc1127 2SC1147 2sc1186 2SC1111
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC1101 1100 5 1A 50W(Tc=25ºC) 150 60 15 500 2SC1102 300 7 100 11W(Tc=25ºC) 150

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2sd526 equivalent

Contextual Info: 1.1. Maximum ratings of transistors ercised not to exceed any of the absolute m axi­ mum ratings, while taking into account fluctu­ ation of the supply voltage, deviation in prop­ erties of the electrical components, exceeding the maximum ratin g s while adjusting the c ir­

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773