2SA209 Search Results

Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)

2SA2098

Abstract: 2sc5887 IC 7495 datasheet TA-372 2SA2098-2SC5887 ic 7495 2SA20 7495 ic
Contextual Info: Ordering number : ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Current Switching Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features • 3.2

2sa2099

Abstract: 2SC5888 equivalent transistor 2sc5888 ENN7331 2SA20 D2502
Contextual Info: Ordering number : ENN7331 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features • 3.2

2SA2092

Contextual Info: 1A / 60V Bipolar transistor 2SA2092 Features 1 High speed switching. tf : Typ. : 30ns at IC = 1A) 2) Low saturation voltage. (Typ. : 200mV at IC = 500mA, IB = 50mA) 3) Strong discharge resistance for inductive load and capacitance load.

2SA2092

Abstract: 1A60V
Contextual Info: 1A / 60V Bipolar transistor 2SA2092 Dimensions Unit : mm Features 1) High speed switching. (tf : Typ. : 30ns at IC = 1A) 2) Low saturation voltage. (Typ. : 200mV at IC = 500mA, IB = 50mA) 3) Strong discharge resistance for inductive load and

2SA2099

Abstract: 2SC5888 equivalent transistor 2sc5888 D2502 TA-3711 2SC588
Contextual Info: 2SA2099 / 2SC5888 Ordering number : EN7331A SANYO Semiconductors DATA SHEET 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • •

Contextual Info: 2SC5866 Datasheet NPN 2A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 2A TSMT3 Collector Base Emitter 2SC5866 SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2094 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

4075 datasheet

Abstract: 7116 2SA2094
Contextual Info: SPICE PARAMETER 2SA2094 by ROHM TR Div. * 2SA2094 PNP BJT model * Date: 2006/11/14 .MODEL 2SA2094 PNP + IS=1.0000E-12 + BF=237.46 + VAF=100 + IKF=3.7116 + ISE=1.0000E-12 + NE=1.4875 + BR=3.4075 + VAR=100 + IKR=.23214 + ISC=19.134E-12 + NC=1.7098 + NK=.86947

2SA2092

Abstract: Q2SA2092 9840 diode
Contextual Info: SPICE PARAMETER 2SA2092 by ROHM TR Div. * 2SA2092 PNP BJT model * Date: 2006/11/13 .MODEL 2SA2092 PNP + IS=220.00E-15 + BF=230.87 + VAF=100 + IKF=1.9840 + ISE=220.00E-15 + NE=1.5839 + BR=5.9620 + VAR=100 + IKR=7.7929 + ISC=1.4096E-12 + NC=1.2180 + NK=.78563

transistor A2097

Abstract: 2SA2097 A2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

A2097

Abstract: 2SA2097
Contextual Info: 2SA2097 東芝トランジスタ シリコンPNPエピタキシャル形 2SA2097 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = −0.27 V (最大)

Contextual Info: 2SA2096 Transistors Power transistor −60V, −5A 2SA2096 !External dimensions (Unit : mm) 0.75 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 1.0 0.5 !Features

Contextual Info: Medium power transistor 60V, 2A 2SA2094 Dimensions (Unit : mm) TSMT3 0.4 (1) (3) 1.9 Applications Low frequency amplifier High speed switching 0.6 1.0MAX 0.85 0.7 0.1 0.3 (1) Base (2) Emitter (3) Collector 0.16 (2) 0.95 0.95 2.8 1.6 2.9 Features

2SA2094

Abstract: 2SC5866
Contextual Info: 2SA2094 Transistors Medium power transistor −60V, −2A 2SA2094 !External dimensions (Unit : mm) TSMT3 2.9 0.4 (1) (3) 1.9 0.3 1.0MAX 0.7 0.6 0.1 (1) Base (2) Emitter (3) Collector 0.85 (2) 0.95 0.95 2.8 1.6 0.16 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A)

transistor A2097

Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

Contextual Info: Power transistor 60V, 2A 2SC5880 Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093

A2093

Abstract: 2SA2093 2SC5880
Contextual Info: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A)

A2096

Abstract: 2SA2096 2SC5881
Contextual Info: 2SA2096 Transistors Power transistor −60V, −5A 2SA2096 zExternal dimensions (Unit : mm) 0.75 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 1.0 0.5 zFeatures

2SA2097

Abstract: transistor pnp a110
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

2SA2090

Abstract: 2SC5868
Contextual Info: 2SA2090 Transistors Medium power transistor −60V, −0.5A 2SA2090 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 500mA) 2) Low saturation voltage, typically. (Typ. : −150mV at IC = −100mA, IB = −10mA) 3) Strong discharge power for inductive load and

transistor A2097

Abstract: A2097 2SA2097 2SA20 transistor 2SA2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

2SA2092

Abstract: 2SA20
Contextual Info: 2SA2092 Transistors -1A / -60V Bipolar transistor 2SA2092 zExternal dimensions Unit : mm zApplications High-speed switching, low frequency amplification TSMT3 zFeature 1) High speed switching. (tf : Typ. : 30ns at IC = -1A) 2) Low saturation voltage. (Typ. : −200mV at IC = −500mA, IB = −50mA)

Contextual Info: 2SA2099 / 2SC5888 Ordering number : EN7331A SANYO Semiconductors DATA SHEET 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • •

transistor A2097

Abstract: A2097 2SA2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)