2SC5880 Search Results

2SA2093

Abstract: 2SC5880
Contextual Info: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)

Contextual Info: Power transistor 60V, 2A 2SC5880 Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093

6008E-12

Abstract: 2SC5880
Contextual Info: SPICE PARAMETER 2SC5880 by ROHM TR Div. * 2SC5880 NPN BJT model * Date: 2006/11/13 .MODEL 2SC5880 NPN + IS=270.00E-15 + BF=230.08 + VAF=100 + IKF=3.6536 + ISE=270.00E-15 + NE=1.4864 + BR=7.8806 + VAR=100 + IKR=.34994 + ISC=7.6008E-12 + NC=1.4061 + NK=.76747

2SA2093

Abstract: 2SC5880 c5880 60V transistor npn 2a switching applications
Contextual Info: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 zDimensions (Unit : mm) zFeatures 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and

c5880

Abstract: 2SA2093 2SC5880 2SA20
Contextual Info: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)

Contextual Info: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)

Contextual Info: Power transistor 60V, 2A 2SC5880 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load.

2SA2160

Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Contextual Info: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series

A2093

Abstract: 2SA2093 2SC5880
Contextual Info: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A)

pioneer mosfet audio amp ic

Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
Contextual Info: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great

2SC6144

Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Contextual Info: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.

A2093

Abstract: 2SA2093 2SC5880
Contextual Info: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A) 3) Strong discharge power for inductive load and

2sc5922

Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
Contextual Info: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability

A2093

Abstract: 2SA2093 2SC5880
Contextual Info: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A)

A2093

Abstract: 2SA2093
Contextual Info: Power transistor 60V, 2A 2SA2093 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 30ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and