2SA156 Search Results

12V dc 6A motor driver

Abstract: 2SA1567 2SC4064
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1567 S ilic o n PNP P o w e r T ra n s is to rs DESCRIPTION • With TO-220F package • Complement to type 2SC4064 • Low collector-emitter saturation voltage APPLICATIONS • For DC motor driver .chopper regulator

Contextual Info: Product specification 2SA1566 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Low frequency amplifier. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

12V dc 6A motor driver

Abstract: 2SA1567
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1567 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·DC Current Gain: hFE= 50(Min)@ (VCE= -1V,IC= -6A) ·Low Saturation Voltage: VCE(sat)= -0.35V(Max)@ (IC= -6A, IB -0.6A)

Hitachi DSA002754

Contextual Info: 2SA1566 Silicon PNP Epitaxial Application Low frequency amplifier Outline 2SA1566 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –120 V Emitter to base voltage VEBO

Contextual Info: Power Transistor 2SA1567 Test Conditions VCB = –50V VEB = –6V IC = –25mA VCE = –1V, IC = –6A IC = –6A, IB = –0.3A VCE = –12V, IE = –0.5A VCB = –10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat) fT COB Ratings –100max –100max –50min

Contextual Info: SANKEN E L E C T R I C CO LTD S5E D • 7 ^ 0 7 4 1 000CH7b 711 ■ ISAKJ Silicon NPN Epitaxial Planar ☆Low VcEisat Transistor ☆Complement to type 2SA1567 2SG4064 Application Example : DC M otor Driver and General Purpose • Outline Drawing 4 . . FM20

Contextual Info: 2SA1567 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)12 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2044B

Abstract: 2SA1562 2045B
Contextual Info: Ordering number:EN2261A PNP Epitaxial Planar Silicon Transistors 2SA1562 High-hFE AF Amplifier Applications Applications Package Dimensions unit:mm 2045B • AF amplifier, various drivers. Features [2SA1562] · Adoption of MBIT process. · High DC current gain.

2SA1566

Abstract: 2SA1566JIDTL-E 2SA1566JIETL-E SC-59A
Contextual Info: 2SA1566 Silicon PNP Epitaxial REJ03G0642-0200 Previous ADE-208-1021 Rev.2.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings (Ta = 25°C)

2SC2673

Abstract: 2SC4040 2SA881 2SA1560 2SC26
Contextual Info: 2SA881 /2SA1560 h 7 > y ^ ^ / T ransistors PNP '> • ;= !> 2 S A 8 8 1 Power Amp. Epitaxial Planar PNP Silicon Transistors 2 S A 1 5 6 0 il-J fi-s H iH /D im e n s io n s U nit : mm 1) y J ^ F T R n ' - y ^ - v l C T P c = 6 0 0 m W o 2SA881 2) Low V cE (sat|= — 0-2V(Typ.)at—500mA

2SC2021

Abstract: 2SC403 2SA937A
Contextual Info: h 7 > y 7.$/Transistors 2SA937A/2SA1561A 2SA937A xtf$4ry7^U-^PNP'> U=i> m Epitaxial Planar PNP Silicon Transistors Small Signal Amp. 2SA1 561 A - a S ' M f ^ l i f f l / G e n e r a l • f t* h 1 2SA 937A •7 2SA 1561A 1C Max = - 150mA, P c M ax= 300m W

2SA1566

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial 2SA1566 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Low frequency amplifier. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

2SA1568

Abstract: TRANSISTOR 2SA1568
Contextual Info: Power Transistor 2SA1568 ICBO IEBO V BR CEO hFE VCE (sat) VFEC fT COB Ratings –100max –60max –60min 50min –0.35max –2.5max 40typ 330typ (Ta=25ºC) Unit µA mA V External Dimensions FM20 (full-mold) 10.0 V V MHz pF a b RL (Ω) 4 IC (A) –6 VBB1

STA508A

Abstract: STA509A 2sd2141 2sd2382 2sc3852 STA463C STA415A fn812 SDC09 smd 18w
Contextual Info: Transistors and MOS FETs Transistors and MOS FETs by Application Application Page Igniters 2SD2141 58 57 Injectors 2SC4153 2SD2382 STA461C STA463C STA508A SDC09 AT Automatic Transmissions 2SA1488 2SA1488A 50 52 Cruise controls 2SA1568 2SC4065 SLA8004 2SA1567

C4048

Abstract: 2SA1564 13KA 2SC404
Contextual Info: O rde rin g n u m b e r: E N 2 3 8 1 2SA1564/2SC4048 PNP/NPN Epitaxial Planar Silicon Transistors S A iY O Switching Applications _ with Bias Resistance i Applications . Switching circuit, inverter circuit, interface circ^lV» dt^iör cÖöuit Features

2SC4064

Contextual Info: 2SC4064 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1567 V(BR)CEO IC 12 A hFE µA VEB=6V 10max µA IC=25mA 50min V VCE=1V, IC=6A 50min IB 3 A VCE(sat) IC=6A, IB=0.3A 0.35max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 40typ MHz 150 °C COB

2SC4040

Abstract: 2SA1560
Contextual Info: 2SC4040 Transistor, NPN Features Dimensions Units : mm • available in FTL TL2 package • large collector power dissipation: Pc = 600 mW • low collector saturation voltage typically VCE(sat) = 0.15 V at lc/lB = 500 mA/50 mA complementary pair with 2SA1560

transistor 390

Abstract: 2sc4038 2SD2191 2sc4040
Contextual Info: Bipolar transistors-2SA series FTL summary Table 1 FTL general use transistors Application pc mW V CEO Ir ' c (m a x ) (V ) (mA) (mA) -50 -150 300 2SC4038 50 150 300 2SA1560 -32 -1000 2SB1277 -32 -2000 2SB1278 -80 2SC4037 Part no. 2SA1561A (Ta = h FE h FE

2SC4064

Abstract: 2SA1567 FM20
Contextual Info: 2SC4064 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1567 IC 12 A hFE VEB=6V 10max µA IC=25mA 50min V VCE=1V, IC=6A 50min IB 3 A VCE(sat) IC=6A, IB=0.3A 0.35max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 40typ MHz 150 °C COB VCB=12V, f=1MHz

2SA881

Abstract: 2sc4040 2sC2673 FEca 2SA1560
Contextual Info: ROHM 40E D CO L T D 7fl20W OGQSMOt 7 B R H M K 7 > V X £ /Transistors 2SA881 /2SA1560 '7 ^ 2 7 - I I if 2 3- V T^U7° U - •?M PNP V 'j U > h 7 > V 7. £ 4, >biH,iiffl/Medium Power Amp. Epitaxial Planar PNP Silicon Transistors 2SÄ881 2SÂ1560 • 4+Jfê\J'$ÈI2i/'Dîmensions U nit : mm

SE135N

Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Contextual Info: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668

ic SE 135

Contextual Info: Power Transistor 2SA1567 Test Conditions VCB = –50V VEB = –6V IC = –25mA VCE = –1V, IC = –6A IC = –6A, IB = –0.3A VCE = –12V, IE = –0.5A VCB = –10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat) fT COB Ratings –100max –100max –50min

12V dc 6A motor driver

Abstract: dc motor for 24v 2SA1567 24V "DC Motor" 24V to 12V REGULATOR IC dc chopper circuit 2SA156
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1567 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·DC Current Gain: hFE= 50(Min)@ (VCE= -1V,IC= -6A) ·Low Saturation Voltage: VCE(sat)= -0.35V(Max)@ (IC= -6A, IB -0.6A)

12V dc 6A motor driver

Abstract: 2SC4064 24V "DC Motor" 2SA1567
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4064 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = 0.35V(Max)@ IC=6A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V (Min) ·Complement to Type 2SA1567 APPLICATIONS