2SC26 Search Results

2SC2640

Abstract: pj 71
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2640 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=28W Min, ( f=175MHz, VCC=12.5V, Pi=4W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=14.5V, Pj=4W, f=175MHz

2SC2641

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2641 U n i t in m m UHF BAND POWER A MPLIFIER APPLICATIONS. FEATURES : . Output Power : P 0=6W Min. ( f = 4 7 0 M H z , V CC=12.6V, Pi=lW) . 1 0 0 % T e s t e d fo r L o a d M i s m a t c h S t r e s s at A l l P h a s e

2SC2665

Abstract: 2sa1135 2SC2665 2sa1135
Contextual Info: JMnic Product Specification 2SA1135 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SC2665 APPLICATIONS ・For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter

2sa1133

Abstract: HIGH VOLTAGE POWER 2SA1133 PNP TRANSISTORS 2SA1133A 2SA113
Contextual Info: JMnic Product Specification 2SA1133 2SA1133A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High breakdown voltage ・High power dissipation ・Complement to type 2SC2660/2660A APPLICATIONS ・For power amplifier and TV vertical deflection output applications

Contextual Info: 2SC2620 Silicon NPN Epitaxial Planar REJ03G0704-0200 Previous ADE-208-1071 Rev.2.00 Aug.10.2005 Application VHF amplifier, Local oscillator Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings

2SC2665

Abstract: 2SA1135
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1135 Silicon PNP P o w er Transistors DESCRIPTION • W ith TO-3PN package • Complement to type 2SC2665 APPLICATIONS • For general purpose applications PINNING PIN DESCRIPTION 1 Base o Collector:conr>ected to

2SC2650

Abstract: oz903
Contextual Info: TOSHIBA - C D I S CR E TE /O P TO J 9097250 TOSHIBA DF|-=m=J7250 <DISC R ET E/ OP TO 2SC2650 ' 56C Ö7 58 i 00D7SÖ1 D T ' - J J V ? S IL IC O N NPN T R IP L E D IF F U SE D TYPE 34.3MAX. 5.3MAX 3X0 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS.

2SC2612

Contextual Info: Inchange Semiconductor Product Specification 2SC2612 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High collector breakdown voltage : VCEO=400V Min APPLICATIONS ・For high voltage ,high speed and high power switching applications PINNING

2SA1133

Abstract: 2SC2660 2SA1133A
Contextual Info: Inchange Semiconductor Product Specification 2SA1133 2SA1133A Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·High breakdown voltage ·High power dissipation ·Complement to type 2SC2660/2660A APPLICATIONS ·For power amplifier and TV vertical

2SC2615

Abstract: 2sc261
Contextual Info: Inchange Semiconductor Product Specification 2SC2615 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-247 package ・High voltage,high speed APPLICATIONS ・For high voltage,high speed and high power switching applications PINNING PIN DESCRIPTION 1

transistor Ic 1A datasheet NPN

Abstract: 2SC2657 2sc265 IC Designs vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor transistor 800V 1A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2657 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications.

Contextual Info: 2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2670 Unit: mm High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications • Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Absolute Maximum Ratings (Ta = 25°C)

2sc2655

Abstract: 1345 NPN
Contextual Info: 2SC2655 NPN General Purpose Transistors P b Lead Pb -Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD ELECTRICAL CHARACTERISTICS（Tamb=25℃ Symbol Parameter Test unless otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO

2SA1123

Abstract: 2SC2631
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 0.7±0.2 • Satisfactory forward current transfer ratio hFE collector current IC

2SC2627

Abstract: IW transistor RF POWER TRANSISTOR NPN
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2627 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC2627 is a silicon NPN epitaxial planar typ e transistor designed fo r RF power am plifiers in V H F band m obile radio applications. Dimensions in mm C 1 .5 M A X

2SC2688

Abstract: K 4080
Contextual Info: SavantIC Semiconductor Product Specification 2SC2688 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High breakdown voltage ·High transition frequency APPLICATIONS ·Designed for use in Color TV chroma output circuits. PINNING PIN DESCRIPTION

2SC2682

Abstract: 2SA1142
Contextual Info: SavantIC Semiconductor Product Specification 2SC2682 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1142 APPLICATIONS ·Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN DESCRIPTION

2sa1133

Abstract: 2SA1133A
Contextual Info: SavantIC Semiconductor Product Specification 2SA1133 2SA1133A Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·High breakdown voltage ·High power dissipation ·Complement to type 2SC2660/2660A APPLICATIONS ·For power amplifier and TV vertical

2SA1141

Abstract: 2sc2681
Contextual Info: SavantIC Semiconductor Product Specification 2SA1141 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SC2681 ·High transition frequency · APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier

2SC2615

Abstract: 2sc261
Contextual Info: SavantIC Semiconductor Product Specification 2SC2615 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·High voltage,high speed APPLICATIONS ·For high voltage,high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base 2

2SC2654

Abstract: 2SA1129
Contextual Info: SavantIC Semiconductor Product Specification 2SC2654 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1129 ·Low collector saturation votage APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications

2SC2613

Abstract: DSA003644
Contextual Info: 2SC2613 Silicon NPN Triple Diffused ADE-208-886 Z 1st. Edition Sep. 2000 Application High voltage, high speed and high power switching Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2sa1133

Abstract: 2SC2660 TV power transistor datasheet
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1133 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -150V (Min) ·Large Collector Power Dissipation ·Complement to Type 2SC2660 APPLICATIONS ·Designed for power amplifier and TV vertical deflection

TV power transistor datasheet

Abstract: 2SA1133A 2SC2660A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1133A DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -180V (Min) ·Large Collector Power Dissipation ·Complement to Type 2SC2660A APPLICATIONS ·Designed for power amplifier and TV vertical deflection