2SA1036 Search Results

IMT17

Abstract: 2SA1036K T110
Contextual Info: IMT17 Transistors General purpose transistor isolated dual transistors IMT17 zExternal dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (5) (4) (6) +0.2 1.6 −0.1 (4) 2.8±0.2 zFeatures 1) Two 2SA1036K chips in an SMT package.

Contextual Info: MCC TM Micro Commercial Components 2SA1036-P 2SA1036-Q 2SA1036-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • PNP Silicon Epitaxial Transistors Large IC. ICMax.= -0.5 A

IMT17

Contextual Info: IMT17 Transistors General purpose transistor isolated dual transistors IMT17 zExternal dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (5) (4) (6) +0.2 1.6 −0.1 (4) 2.8±0.2 zFeatures 1) Two 2SA1036K chips in an SMT package.

SOT-23 HP

Abstract: 2SA1036
Contextual Info: 2SA1036 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

Contextual Info: MCC TM Micro Commercial Components 2SA1036-P 2SA1036-Q 2SA1036-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • PNP Silicon Epitaxial Transistors Large IC. ICMax.= -0.5 A

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES z Power dissipation: PCM=200mW z High ICM MAX. ,I CM(MAX.)=0.5mA. z Low VCE(sat). z Complements the 2SA1036. Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor

transistor b11

Abstract: IMT17 "General Purpose Transistor" 2SA1036K Transistors General
Contextual Info: Transistors General purpose transistor isolated dual transistors IMT17 FFeatures 1) Two 2SA1036K chips in an SMT package. 2) Same size as SMT3 package, so same mounting machine can be used for both. 3) Transistor elements are independent, eliminating interference.

2SA1036K L T146

Contextual Info: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S •External dimensions (Units: mm) 2SA1577 2SA1036K 1 1+0.2 ; -0;1 [0.&SQ.95] 0 .8 ± 0 .1 U (ß 1.3±0.1 f 1 0.65 0 65 y fa +J i! (3)01 _ •Structure Epitaxial planar type PNP silicon transistor

transistor bf 194

Abstract: BF 194 transistor datasheet 7430 7430 7439 bf 194 BF 194 TRANSISTORS data sheet 7430 2SA1036K Q2SA1036K
Contextual Info: SPICE PARAMETER 2SA1036K by ROHM TR Div. * 2SA1036K PNP BJT model * Date: 2006/12/05 .MODEL 2SA1036K PNP + IS=60.000E-15 + BF=194.09 + VAF=31.854 + IKF=1.9855 + ISE=60.000E-15 + NE=1.4487 + BR=8.8685 + VAR=100 + IKR=59.046E-3 + ISC=60.100E-12 + NC=1.7430

2SA1036K

Abstract: transistor surface mount to 2SA1577 2SC2411K 2SC4097 T106 T146 transistor PNP
Contextual Info: 2SA1036K 2SA1577 Transistor, PNP Features Dimensions U n its: mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1036K and 2SA1577; H-*, where ★ is hFE code • • • large collector current: ^C(max) = —500 mA

TRANSISTOR 246

Abstract: 2SC1741S 2SC4097 "Power transistor" 2SC24 NPN Silicon Epitaxial Planar Transistor 2SA1036K 2SA1577 2SA854S 2SC2411K
Contextual Info: Transistors Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S FFeatures 1) High Ic(Max.) IC(Max.) = 0.5A 2) Low VCE(sat). Ideal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S. FExternal dimensions (Units: mm) FStructure

Contextual Info: Is 7 > v X $ /T ra n sisto rs • m&m-um f^Tp * J^nofi— M H/M aintenance-Discontinued Types Lists • — St3 1 / M aintenance Types List Type Replacem ent Type Replacement Type tt1 fp ap Replacement 2SA1036 2SA1036K 2SC3722 2SC3722K DTA144WM DTA144WK 2SA1037

2SC2411K

Contextual Info: 2SC2411K SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Complement to 2SA1036K Package:SOT-23 Collector Current :Ic= 500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃

2sa10

Abstract: 2SA1015L 2SC1815L 2sc2562 SA1011 2SA1012 2SA1013 2SA1015 2SA1035 2SA1016K
Contextual Info: - 20 - m n Ta=25t , *En(àTc=25t;) m 2SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1016K 2SA1018 2SA1020 2SA1022 2SA1025 2SA1029 2SA1030 2SA1031 2SA1032 2SA1034 2SA1035 2SA1036K 2SA1037K 2SA1037KLN 2SA1038 2SA1039 2SA1040 2SA1041 2SA1042 2SA1043 2SA1044

2SA1036

Abstract: 0503K
Contextual Info: 2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 IC Max.= -500 mA Low VCE sat . Ideal for low-voltage operation. A L 3 3 C B Top View

Contextual Info: WILLAS FM120-M+ 2SA1036KxLT1 THRU Medium Power Transistor *32V, *0.5A FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

a144* transistor

Abstract: a124* transistor C144* transistor C124* transistor a114* transistor transistor a41 C124E Transistors General TRANSISTORS C144E transistor
Contextual Info: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors General purpose transistor (isolated dual transistors) IMT17 FFeatures 1) Two 2SA1036K chips in an SMT

2SA1036KGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SA1036KGP SURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 * Low saturation voltage V CE(sat)=-0.4V(max.)(I C=-100mA)

c102 TRANSISTOR

Abstract: 2N3904 A41 transistor c102 c101 TRANSISTOR TRANSISTOR 246 transistor c101 2n2222+331+transistors 2SC4043 TRANSISTOR 618 609 transistor
Contextual Info: Transistors Medium Power Transistor *32V, *0.5A 2SA1036K / 2SA1577 / 2SA854S FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FExternal dimensions (Units: mm) FStructure

2SA1036K

Abstract: 2SA1577 QR 2SA1577 2SA854S 2SC1741S SC-72
Contextual Info: 2SC1741S Transistors Medium Power Transistor 32V, 0.5A 2SC1741S zExternal dimensions (Units : mm) 2SC1741S 2±0.2 3Min. 3±0.2 4±0.2 (15Min.) zFeatures 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S.

2SA1036

Contextual Info: 2SA1036 PNP Silicon General Purpose Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 3 Collector 3 1 FEATURES 2 1 A Base L . Large IC, IC MAX.=-500mA 2 3 . Low VCE Sat , Ideal for low-voltage operation B S Top View

smd transistor marking HR

Abstract: transistor smd marking hq smd transistor "marking HR" 2SA1036K transistor smd hq smd transistor H-R
Contextual Info: Transistors SMD Type Medium Power Transistor 2SA1036K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Low VCE sat . Ideal for low-voltage operation. 0.4 3 Large IC. ICMax. = -500mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 Absolute Maximum Ratings Ta = 25

Contextual Info: Transistors General Purpose Transistor Isolated Dual Transistors IMT17 •Features 1) Two 2SA1036K chips in a SMT package. 2) Mounting possible with SMT3 au­ tomatic mounting machine. 3) Transistor elements are indepen­ dent, eliminating interference.

Contextual Info: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S •F e a tu re s IcMax. = - 5 0 0 m A 2) • E x t e r n a l d im e n s io n s (U nits: m m ) L a rg e lc. 2SA1577 2SA1036K L o w VcE(sat). O p tim a l f o r lo w - v o lt'¿±0.1