2SA1015 0 Search Results

2SA1015

Abstract: 2sa1015gr 2SA1015 GR 2SA1015-Y A1015 y
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Capable of 0.4Watts of Power Dissipation.

2sa1015

Abstract: 2SA1015-Y 2SA1015 GR 2SA1015 Y 2SA1015GR transistor 2sa1015y 2SA1015Y
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 0.4Watts of Power Dissipation.

A1015 gr

Abstract: 2sa1015 a1015 transistor 2SA1015 GR transistor 2sa1015y 2SA1015-Y 2SA1015 G 2SA1015 Y 2SA1015GR A1015 TO92
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A

2SA1015

Abstract: 2SA1015 GR 2SA1015GR A1015
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 0.4Watts of Power Dissipation.

2SA1015

Abstract: transistor A1015 GR 2SA1015-Y 2SA1015 G 2SA1015 GR 2SA1015 Y 2SA1015GR
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A

Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Capable of 0.4Watts of Power Dissipation. Collector-current: -0.15A

transistor 2sa1015y

Abstract: 2SA1015Y transistor A1015 2sa1015 transistor a1015 transistor A1015 A1015 gr 2sa1015 2sa1015 datasheet PNP 2SA1015GR
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A

2SA1015

Abstract: 2SA1015 GR 2SA1015GR 2sa1015y
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Capable of 0.4Watts of Power Dissipation.

2SA1015

Abstract: 2SA1015 GR 2SA1015GR transistor 2sa1015y transistor 2SA1015
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • • Capable of 0.4Watts of Power Dissipation.

A1015

Abstract: 2SA1015 2SA1015 GR 2SA1015GR transistor A1015
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Capable of 0.4Watts of Power Dissipation.

2sa1015

Abstract: 2SA603 2SA1255 2SA638 2SA673 2SA778 2SA821 2SA838 2SA921 2SA952
Contextual Info: - M £ Type No. tt « Manuf. H i# SANYO K 2Ê TOSHIBA * 2 SA 37 \0s ^ ' * * 2SA 38 ^ * * 2SA 39 ii M. 2SA 45 ¡K s 2SA1015 * 2SA 49 ï s 2SA1015 * T 2SA 50 t«^-' 2SA 51 * 2SA 52 ♦ 2SA 53 ♦ 2SA 119 drii ♦ 2SA 120 *±a * 2SA 304 ^ NEC B 1L HITACHI

2SC1815

Abstract: 2SA1015L 2SA1015
Contextual Info: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA

RN2226

Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Contextual Info: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package

2SA1015

Abstract: 2SA1015L 2sa1015 datasheet 2SC1815 2SA1015 0
Contextual Info: 2SA1015 L 東芝トランジスタ シリコンPNPエピタキシャル (PCT方式) 2SA1015(L) ○ 低周波増幅用 ○ 励振段増幅用 • • • • • 単位: mm 高耐圧でしかも電流容量が大きい。 : VCEO = −50 V (最小), IC = −150 mA (最大)

2sa10

Abstract: 2SA1015L 2SC1815L 2sc2562 SA1011 2SA1012 2SA1013 2SA1015 2SA1035 2SA1016K
Contextual Info: - 20 - m n Ta=25t , *En(àTc=25t;) m 2SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1016K 2SA1018 2SA1020 2SA1022 2SA1025 2SA1029 2SA1030 2SA1031 2SA1032 2SA1034 2SA1035 2SA1036K 2SA1037K 2SA1037KLN 2SA1038 2SA1039 2SA1040 2SA1041 2SA1042 2SA1043 2SA1044

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015 1

2SC1815

Abstract: transistor 2SC1815 2s*1815 transistor 2SC1815L 2SA1015 2sc1815 transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR „ FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR  FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015

2SC1815 NPN SOT-23

Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
Contextual Info: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213

Contextual Info: Transistors IC SMDType DIP Type PNP Transistor 2SA1015 TO-92 Unit: mm +0.25 4.58 –0.15 • Features 4.58 ±0.20 ● Collector Current to Continuous :IC=-150mA ● Power Dissipation :PD=400mW 1.27TYP [1.27 ±0.20] 14.47 ±0.40 0.46 ±0.10 1 2 3 +0.10 1.27TYP

2SC1815

Abstract: transistor 2sa1015 2SA1015 2sa1015a
Contextual Info: 2SA1015 TOSHIBA 2 S A 1 015 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS • High Voltage and High Current. : v CEO - - 50V (Min.), Iç; = - 150mA (Max.)

Contextual Info: 2SA1015 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

2sa1015 equivalent

Abstract: 2SA1015 2SC1815 st 2sc1815
Contextual Info: ST 2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor ST 2SC1815 is recommended.