A1015 GR Search Results

A1015 transistor

Abstract: transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015
Contextual Info: TO-92 Plastic-Encapsulate Transistors PNP A1015 A1015 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range

transistor A1015 GR

Abstract: br a1015 transistor A1015 a1015 transistor A1015 A1015 gr A1015 Y Transistor TO-92 A1015 A1015 equivalent A1015 PNP TRANSISTOR
Contextual Info: A1015 A1015 TRANSISTOR PNP TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃

A1015 gr

Abstract: transistor A1015 GR A1015 transistor A1015 a1015 transistor Transistor TO-92 A1015 A1015 y A1015 PNP TRANSISTOR A1015 TO92 equivalent transistor A1015
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO 3.BASE Value Units

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR（ PNP ） TO—92 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W（Tamb=25℃） Collector current ICM : -0.15 A Collector-base voltage

Contextual Info: TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage

a1015 transistor

Abstract: transistor A1015 GR transistor A1015 A1015 PNP TRANSISTOR a1015 A1015 gr Transistor TO-92 A1015 transistor pnp a1015 a1015 TRANSISTOR pnp br a1015
Contextual Info: A1015 Transistor PNP TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage

Contextual Info: A1015 0.4 W, -150 mA, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 FEATURES 1.27 Typ. Power Dissipation 1: Emitter 2: Collector 3: Base 1.25±0.2 14.3±0.2

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units

A1015 sot-23

Contextual Info: WILLAS FM120-M A1015 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers TRANSISTOR• Batch

a1015 transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO

sa1015

Abstract: A1015 gr A1015 GSA1015 GSC1815
Contextual Info: CORPORATION G S A1015 ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B P NP E PITAX I AL P L ANAR TANSI STOR Description The GSA1015 is designed for use in driver stage of AF amplifier and general purpose applications. Features *Collector-Base Voltage: VCBO =-50V

A1015 gr

Abstract: A1015 y transistor A1015 A1015 A1015 TO92 A1015 equivalent br a1015 A1015 DATASHEET A1015 gr W A1015-pnp
Contextual Info: A1015 PNP General Purpose Transistors TO-92 P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage

A1015

Abstract: A1015 gr A1015 Y transistor A1015 GR transistor a1015 br a1015 a1015 transistor A1015 PNP TRANSISTOR A1015 TO92
Contextual Info: Hcmam TO-92 Piasti A1015 Encapsulate Transistors TO-92 TRANSISTOR P N P FEATURES Power dissipation 1,EMITTER P CM • 0,4 Collecto cu ent W (Tamb=25’’C> 2.COLLECTOR lCM : -0.15 A Collecto -base voltage 3.BASE 1 2 3 • -50 V Ope ating and storage junction temperature range

A1015

Abstract: A1015 equivalent transistor A1015 GR transistor A1015 A1015 y A1015 y equivalent a1015 transistor A1015 PNP TRANSISTOR pnp transistor a1015 A1015 GR
Contextual Info: A1015 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURES Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :-0.15 A Collector-base voltage V (BR)CBO :-50 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C

A1015 gr 331

Abstract: IR3Y26 LA7605 LA7642N LA7605-LCD s1815 LA7605N 27k 3kv tl1451 A1015 gr
Contextual Info: 2 3 +12 152 R76 4.7K 4.7K R79 4.3V 1U E23 E29 273 NC KRF FOF 4.43M IDF 4.0F R-Y 470U/25V Vin 3 Vout GND 102 E42 220U/16V 220U/16V SPK C32 104 R110 CHROMA 472 101 R63 3 103 221 C46 1U R29 SP1 E53 2 EOU VCC NC 19 20 18 VI 17 KILL 16 4.43 SYS 15 SAND 1 CON2 AUDIO

A1015

Abstract: transistor A1015 diagram WJA1015 JESD22-A114 WJA1000 WJA1015-PCB 3016 sot
Contextual Info: WJA1015 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • Cascadable gain block 50 – 2300 MHz 15 dB Gain +17 dBm P1dB +37 dBm OIP3 @ 900MHz Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package

Contextual Info: KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Marking Package Packing Method KSA1015GRTA

Contextual Info: WJA1015 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • Cascadable gain block 50 – 2300 MHz 15 dB Gain +17 dBm P1dB +37 dBm OIP3 @ 900MHz Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package

Contextual Info: WJA1015 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • Cascadable gain block 50 – 2300 MHz 15 dB Gain +17 dBm P1dB +37 dBm OIP3 @ 900MHz Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package

A1015 gr

Abstract: Transistor TO-92 A1015 A1015 A1015 TO92 A10153 pnp transistor a1015 transistor A1015 A1015 equivalent A1015 gr W datasheet A1015 gr W
Contextual Info: Spec. No. : C306A3-T Issued Date : 2003.08.26 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1015A3 Description • The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification.

74LS688

Abstract: s1d13502 isa bus 74LS00 DATA AB-019
Contextual Info: S5U13502 Dot Matrix Graphics LCD Controller ISA Bus Interface Considerations Document Number: X16-AN-003-06 Copyright 1995, 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in

transistor cross reference

Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
Contextual Info: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER

BTS 3900

Abstract: A1015 transistor A1015 diagram JESD22-A114 WJA1015 WJA1015-PCB mmic amplifier marking code 414 bts 2140
Contextual Info: WJA1015 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • 50 – 4000 MHz 14 dB Gain +19.5 dBm P1dB +35.5 dBm OIP3 +5V Single Voltage Supply Internal Active Bias Supply Internally matched to 50 Ω Lead-free / RoHS-compliant /

28C17

Contextual Info: SGS-THOMSON M28C17 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST ACCESS TIME: 90ns ■ SINGLE 5 V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page Write Operation - Byte or Page Write Cycle: 3ms Max