2N6718 Search Results

2N6718

Abstract: 2n6717 2N6716 NPN Transistor 1A 100V 2n6718 equivalent npn transistor 100v min NPN Transistor VCEO 80V 100V hfe 100 100v 1a transistor VCE 100V transistor transistor 2n6718
Contextual Info: 2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   TO-92 High Voltage：VCEO = 100V Gain of 20 @ IC = 0.5A G H Emitter

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications.  FEATURES * High Power: 850mW * High Current: 1A

2N6718

Abstract: IC350 2N6718L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD. 2N6718 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES 1 *High Power: 850mW *High Current: 1A

2N6718

Contextual Info: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N6718 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6718 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC

Contextual Info: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR

2N6716

Abstract: 2N6718
Contextual Info: 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94_ FEATURES * 100 Volt V,CEO G ain o f 20 at lc = 0.5 A m p Ptot=1 W att E E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. SYM BO L PARAM ETER Collector-Base Voltage

2N6718

Abstract: 2N6716 2N6717 ic-250mA DSA003749
Contextual Info: 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6716 Collector-Base Voltage VCBO

2N6718 NATIONAL SEMICONDUCTOR

Abstract: T0-237 NSDU07 bc640 to237 2N6717 T0237 2N6730 2N6718 mpsa06 2N3019
Contextual Info: bflE J> m fc,SD113D ODBTSIS STT • NSC5 NATL SEHICOND D I S C R E T E Devices V C£0(su*l> 100 PUP NPN 2N6553 2N6718 80 2N6730 mA (MHz) Min IDA NF (dB) Max P d (Amb) Package (mW) Max Min Max 1000 80 250 50 75 100 T0-202(55) 1333 1000 50 250 250 50 200

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-237 Plastic Package 2N6718 NPN SILICON PLANAR EPITAXIAL TRANSISTOR Designed for General Purpose Medium Power Amplifier and Switching Circuits.

ztx614

Abstract: 2n6718 2N6714 2N6715 2N6716 2N6717 2N6724 2N6725 2N6726 2N6727
Contextual Info: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N6724 2N6725 2N6716 2N6717 2N 6731 2N6718 V cbo 2N6726 2N6727 — — 2N6728 2N6729 2N6732 2N6730 •c V CEO Max. V CEIsat at •c m 'c mA V V A A V 40 50 50 60 60 80

2N6715

Abstract: 2N6716 2N6717 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735 CIL2229
Contextual Info: TO-237 Plastic Package Transistors NPN Max mum Rating s Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Type ^CBO No. ^CE ^EBO (V) Min (V) Min (V) Min @Tc=25 c 50 40 5 0.75 2N6715 2N6716 2N6717 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735

Contextual Info: 2N6718 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)250m

3 phase IGBT inverter design by ir2130

Abstract: IR2130 INVERTER SCHEMATIC 3 phase inverter ir2130 IR2130 APPLICATION NOTE 3 phase brushless dc control ir2130 3 phase inverter schematic diagram ir2130 schematic diagram 110v dc motor speed controller 2n6718 equivalent ML4425 DC 74HC04
Contextual Info: June 1996 Application Note 43 Using the ML4425/ML4426 BLDC Motor Controllers by John DeFiore INTRODUCTION THEORY OF OPERATION The purpose of this document is to explain the theory and application of Micro Linear’s ML4425 and ML4426 brushless DC motor controller IC’s, with speed control. It

1500 rpm 24V BLDC motor

Abstract: ML4425 Micro Linear Application Note ML4425 ML4425C Sensorless BLDC Motor Controller ML4425
Contextual Info: May 1997 ML4425/ML4426 Sensorless BLDC PWM Motor Controller GENERAL DESCRIPTION FEATURES The ML4425/ML4426 PWM motor controllers provide all of the functions necessary for starting and controlling the speed of delta or wye wound Brushless DC Motors BLDC without

BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Contextual Info: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99

MJE2955

Abstract: 2N3645 bc557 BC307 BC212
Contextual Info: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer

2N6730

Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6718 2N6726 2N6727 2N6728
Contextual Info: Power Transistors TO-237 Case Ò Z TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (mA) MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250

IK2118

Abstract: 3-phase bldc motor single chip 500V direct drive bldc motor dip 28 IR2118 ML4426 3 phase motor control with phase changer SIMPLE motor dc 6v micro linear application note 35 ML4425 motor controller
Contextual Info: April 1997 PRELIMINARY ML4428* Sensorless Smart-Start BLDC PWM Motor Controller GENERAL DESCRIPTION FEATURES The ML4428 motor controller provides all of the functions necessary for starting and controlling the speed of delta or wye-wound Brushless DC BLDC Motors without the need

CENW64

Abstract: 2N6714 2N6730 2N6715 2N6716 2N6717 2N6718 2N6719 2N6726 2N6727
Contextual Info: Pow er T ran sistors TO-237 Case Z Ò TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic i VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (V) (mA) MAX (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50

2N6718

Abstract: 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722
Contextual Info: Power Transistors TO-237 Case TYPE NO. IC PD BVCBO V MIN BVCEO *BVCES (V) MIN (A) MAX (W) hFE @ IC VCE(SAT) @ IC MIN MAX fT (mA) (V) MAX (mA) (MHz) MIN 250 1,000 0.5 1,000 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 80 50 250 250 0.35 250 50 100 100

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2A 5A10

Abstract: NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 2N5321 D40D10 D40D11 D40D13
Contextual Info: NATL SEMICÔND DISCRETE 2SE D- • bSG113Q GQ377âS 1 ■ 7"^/ NPN Medium Power Transistors by Ascending Vceo (Continued) H fe @ lc /V Ce Vce (sat) (V) ’ Vceo (V) Min Max (mA/V) NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 10/1 150/1 200/10 0.9 0.25