2N6715 Search Results

2N6716

Abstract: 2N6714 2N6715 2n6715 datasheet 6716
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer 2N6714 2N6715 2N6716 TO-237 Plastic Package Boca Semiconductor Corp. BSC http://www.bocasemi.com NPN SILICON PLANAR EPITAXIAL TRANSISTORS

2n6700

Abstract: 2N6718 2N6714 2N6729 2n6717 2N6715 2N6716 2N6724 2N6725 2N6726
Contextual Info: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N 6724 2N6725 2N6716 2 N 67 1 7 2N6731 2 N 6 7 18 V cbo 2 N 6 72 6 2 N 6 72 7 — — 2 N 67 2 8 2 N 67 2 9 2 N 67 3 2 2N6730 •c V CEO M ax. V CEIsat at •c m 'c mA

2N6715

Contextual Info: 2N6715/PN6715/MPS6715 Z W A H ü National Semiconductor 2N6715 M / PN6715 T0" 257 J u B„ C MPS6715 ify T0" 92 B Z *C T L /Q /1 0 1 0 0 -8 TO• 226AE UU Bc T l/G /1 0 1 0 0 -1 T L /G /1 0 1 0 0 -4 N P N G e n e r a l P u r p o s e A m p lifie r E l e c t r ic a l C h a r a c t e r i s t i c s ta = 25°c unless otherwise noted

Contextual Info: Not Recommended for New Design Please Use ZTX449 / ZTX651 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6714 2N6715 ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

Contextual Info: Power Transistors TO-237 Case O Z TYPE ic PD BVCBO BVCEO @ Ic hFE VCE SAT @ IC fT * bv Ce s (A) NPN PNP (W) MAX (mA) (V) (V) MIN MIN MIN MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250 1,000

2sc1175

Abstract: 2SC875 2N6728 2SA606 2N6714 2SA532 2SA532 complementary 2sa708 2N6428 2N6715
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY CASE Pd IC mW (A) VCE(sat) HFE MAXIMUM RATINGS IC VCEO VCE (V) min max (mA) (V) . fT Cob COMPLE­ min max MENTARY (V) (A) (MHz) (PF> TYPE max 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237

Contextual Info: m 2N6715 \ \ SILICON NPN TRANSISTOR P A C K A G E S T Y L E T O -2 3 7 9.020 0.508 TYP. NOM. 0.108 D E S C R IP T IO N : 0.205-0.195 J (5.207-4.953) 0.185 0.175 u Mr ^ The 2 N 6 7 1 5 is Designed for General Purpose Amplifier, and Switching Applications.

2n6717

Abstract: 2N6715 2N6716 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735 CIL2229
Contextual Info: I ^ m mHK• mmmm ■ m m mamm M axim um R a tin g s Type No. 2N6715 2N6716 ^œo V Min 50 60 E le c tric a l C h a ra c te ris tic s (Ta=25°C, U n le s s O th erw ise Specified) ^CM w ^C8 (A) (A) (ma) Max (V) Min (W) @Tc=25°c 'c (V) Min 40 5 0.75 1.5 0.1

ztx614

Abstract: 2n6718 2N6714 2N6715 2N6716 2N6717 2N6724 2N6725 2N6726 2N6727
Contextual Info: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N6724 2N6725 2N6716 2N6717 2N 6731 2N6718 V cbo 2N6726 2N6727 — — 2N6728 2N6729 2N6732 2N6730 •c V CEO Max. V CEIsat at •c m 'c mA V V A A V 40 50 50 60 60 80

2N6715

Abstract: 2N6716 2N6717 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735 CIL2229
Contextual Info: TO-237 Plastic Package Transistors NPN Max mum Rating s Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Type ^CBO No. ^CE ^EBO (V) Min (V) Min (V) Min @Tc=25 c 50 40 5 0.75 2N6715 2N6716 2N6717 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735

2N6714

Abstract: 2N6715 DSA0037489 DSA003748
Contextual Info: 2N6714 2N6715 — NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 1 ISSUE 1- MARCH 94 I FEATURES vcE~ * 40 volt * Gain of 50 at Ic= 1 Amp * PTOt=1 Watt ABSOLUTE MAXIMUM PARAMETER SYMBOL — Collector-Base Voltage Collector-Emitter Emitter-Base ~ RATINGS. ‘CBO

T0-226AE

Abstract: 2N6717
Contextual Info: 2N6715/MPS6715 0 1 National JSfl Semiconductor 2N6717 r M/ U MPS6717 TO-237 T L /G /1 0 1 0 0 -8 ////// T0- 226AE '•f T L /G /1 0 1 0 0 -4 NPN General Purpose Amplifier Electrical Characteristics t a = 25°c unless otherwise noted Symbol Parameter Min Max

CENW64

Abstract: 2n6722
Contextual Info: Power Transistors TO-237 Case O z TYPE ic PD BVCBO ic hFE BVCEO V CE SAT ® IC ft *BVggg (A) (W) MAX (V) (V) (mA) (V) (mA) MAX (MHz) NPN PNP MIN MIN MIN MAX 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 MIN 50 2N6715 2N6727 2.0 2.0 50 40 50 250 1,000

2N6726

Abstract: 2n6727 2n6715
Contextual Info: 2N6714 2N6715 2N6726 2N6727 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6714, 2N6726 series types are complementary silicon plastic power transistors designed for general purpose power

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

ztx450 equivalent

Abstract: transistor equivalent ZTX651 ztx650 equivalent MPS651 equivalent MPS751 equivalent ztx751 equivalent ZTX749 equivalent transistor ztx MPSW92 equivalent ZTX Zetex
Contextual Info: Z E T E X S U P ER E LIN E CROSS R EFER EN C E LIST This Cross-Reference List is intended as a guide to the selection of a direct or near equivalent device from the Zetex Super E-Line Range. Individual device specifications should be checked in detail before

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

ztx456

Contextual Info: E-LINE TRANSISTORS TABLE 5: HIGH PERFORMANCE E-LINE TRANSISTORS Pd =1 Watt The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 A m p w ith pow er dissipation capabilities of 1 W a tt at 25°C am bient tem perature. Typical

BTA08-600C equivalent

Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
Contextual Info: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B

2n6718

Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722 2N6723
Contextual Info: Power Transistors TO-237 Case TYPE NO. IC PD A (W) MAX BVCBO (V) MIN BVCEO *BVCES (V) MIN hFE @ IC VCE(SAT) @ IC MIN MAX fT (A) (V) MAX (A) (MHz) MIN 250 1,000 0.5 1,000 50 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 NPN PNP 2N6714 2N6726 2.0 2.0 40

2N6715

Abstract: 2N6714 2N6726 92GU01
Contextual Info: 92GU01.01A 2N6714.15 NPN POWER TRANSISTORS 30-40 VOLTS 2 AMP, 1.2 WATTS COMPLEMENTARY TO THE 2N6726, 27/92GU51, 51A SERIES Applications: • Class “B ” audio outputs/drivers • General purpose switching and lamp drive in industrial and automotive circuits.

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 2 N 6 7 14 2 N 6 7 15 ISSUE 1 - M ARCH 94_ FEAT U RES * 40 V olt V CE0 * Gain of 50 at lc= 1 A m p * Ptot= 1 Watt / E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y