2N6476 CASE Search Results

2N6476

Abstract: 2N6475
Contextual Info: Inchange Semiconductor Product Specification 2N6475 2N6476 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·General-purpose medium power for switching and amplifier applications

2N6476

Abstract: 2N6476 case 2N6475
Contextual Info: SavantIC Semiconductor Product Specification 2N6475 2N6476 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·General-purpose medium power for switching and amplifier applications

rca 17417

Abstract: TA8445 TA8723 TA8722 2N6476 2N6109 equivalent TA8210 2N6474 2N6106-2N6111 TA7743
Contextual Info: ÏÏÏ 3875081 G E SOLID DE | 3 ñ 7 S G ñ l STATE 01E 17415 DD1741S O D_ r T 3 _ _ General-Purpose Power Transistors - File N um ber 676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 Epitaxial-Base, Silicon

2n6a

Abstract: 2N6474 2N6476 2N6A73 2N6473 2N6475 2N647A
Contextual Info: ♦I 2N6A73 2N647A NPN 2N6475 2N6476 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS JEDEC T0-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6473 Series types are complementary silicon power transistors manufactured by the epitaxial base process designed for general purpose amplifier and

2N8107

Abstract: rca 17417 TA8232 2N6109 equivalent 2N6476 2N6474 equivalent transistors 2N6473 2N6476 rca DG17417 2N6111 RCA
Contextual Info: ÏÏÏ 387 5081 G E SOLID STATE DE |3fl7SQfll DD1741S D " 01E 17415 t T y T .3 Y Z // Power Transistors - File Num ber 676 r - 3 6 - i ? 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476

TA7741

Abstract: 2N6106-2N6111 2N6476
Contextual Info: File Number 676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 HARRIS SEMICOND SECTOR SbE D 43D2571 DÜ4DS03 21M • H A S TERMINAL DESIGNATIONS, 7 = 3 3 - < 2 / Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors General-Purpose Medium-Power Types for

2N6474

Contextual Info: 2N6473 2N6474 2N6475 2N6476 NPN PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6473, 2N6475 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed

TA8723

Abstract: TLE 6289 647s TA8210 TA7783 TA7741 TA8232 h ta7782 TA7742
Contextual Info: 676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors TERMINAL DESIGNATIONS o G en eral-P u rp o se M e d iu m -P o w e r Typ es for Sw itchin g and A m p lifie r A p plications : t Features: • Low saturation voltages

Contextual Info: 4 AMP NPN Sorted by IC, then VCEO Ratings based on 25˚C case temperature unless otherwise specified PT max IC max A VCEO max (V) hFE min hFE max @Ic (A) VCE(sat) max (V) @ IC (A) fT min (MHz) 2N5296 4 40 30 120 Note 1 1 Note 1 Note 1 36 TO-257 2N6121 4

Contextual Info: Power Transistors TO-220 Case TYPE NO. NPN PNP >C PD A (W) MAX @ 1C hFE BVCBO BVCEO (A) (V) 00 MIN MIN MIN MAX VCE(SAT) @ 1C (V) (A) MAX fT (MHz) MIN 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80 60

2N5494

Abstract: 2N6134 2N6133 2N6131 2N6476 2N6040 2N6041 2N6042 2N6109 2N6124
Contextual Info: Standard Optional Power Transistors TO-220 Case TO-220 TYPE NO. IC PD A MAX (W) 2N5294 4.0 2N5296 4.0 2N5298 BVCBO BVCEO hFE @ IC VCE(SAT) @ IC (V) MIN (V) MIN MIN MAX 36 80 70 30 36 60 40 30 4.0 36 80 60 2N5490 7.0 50 60 2N5492 7.0 50 75 2N5494 7.0 50 2N5496

2N6476

Abstract: 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6099 2N6101
Contextual Info: O Power Transistors TO-220 Case TYPE NO. NPN PNP >C PD A (W) MAX @ ic hFE BVCBO BVCEO (A) (V) 00 MIN MIN MIN MAX VCE(SAT) @ IC (V) (A) fT (MHz) MIN MAX 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80

2N6041

Abstract: 2N6133 2N6134 2N6040 2N6042 2N6109 2N6111 2N6124 2N6125 2N6126
Contextual Info: TO-220 Power Transistors TO-220 Case TO-220FP Full Pak • Fully Isolated Standard TYPE NO. IC PD A MAX (W) 2N5294 4.0 2N5296 2N5298 BVCBO BVCEO hFE @ IC VCE(SAT) @ IC (V) MIN (V) MIN MIN MAX 36 80 70 30 4.0 36 60 40 4.0 36 80 60 2N5490 7.0 50 60 2N5492

Contextual Info: Power Transistors f TO-220 Case TYPE NO. NPN PNP «C PD bvcbo BVCEO A (W) (V) (V) MIN MIN tm MAX MAX • ic (A) VCE(SAT) @ 1C (V) (A) fr (MHz) MIN MAX 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80

2sc1061

Abstract: 2SC1626 2N6108
Contextual Info: Power Transistors TYPE POLA­ CASE NO. RITY U te min max Ic A V ce (V) max (V) fl COMPLE­ min MENTARY lc (A) (MHz) TYPE D45C12 MH0810 MH0816 MH0818 MH0870 P P P P P TO-220 TO-220 TO-220 TO-220 TO-220 30 12 10 10 30 4 3 1 1 4 80 30 60 80 50 20 40 40 40 40

mje13007

Contextual Info: O Power Transistors TO-220 Case TYPE NO. NPN PNP tc PD <A W) MAX BVCBO BVCEO @ ic hFE <V) 00 MIN MIN MIN MAX (A) VCE(SAT) @ 1C CO (A) MAX fr (MHz) MIN 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80

MJE1300

Contextual Info: TO-220 Power Transistors TO-220 Case TO-220FP Full Pak • Fully Isolated Standard TYPE NO. IC PD A MAX (W) 2N5294 4.0 2N5296 2N5298 BVCBO BVCEO hFE @ IC VCE(SAT) @ IC (V) MIN (V) MIN MIN MAX 36 80 70 30 4.0 36 60 40 4.0 36 80 60 2N5490 7.0 50 60 2N5492

*e13007

Abstract: MJE13009 D44C11 Data mje13008 MJE800T equivalent bu406d BU407D bu806 equivalent equivalent mje13005 mje13009 equivalent
Contextual Info: TO-220 Power Transistors TO-220 Case TO-220FP Full Pak • Fully Isolated Standard TYPE NO. IC PD A MAX (W) 2N5294 4.0 2N5296 2N5298 BVCBO BVCEO hFE @ IC VCE(SAT) @ IC (V) MIN (V) MIN MIN MAX 36 80 70 30 4.0 36 60 40 4.0 36 80 60 2N5490 7.0 50 60 2N5492

JE2901

Abstract: 2N6044 JE802T JE802 JE801T JE702 LM3661TL-1.40
Contextual Info: o Power Transistors T Y P E NO. NPN PNP @ ic ic PD B V C BO BVCEO A (W) (V) (V) MIN MIN MIN MAX MAX hFE (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80 60 20 80 1.5

TA8210

Abstract: TA8232 TA8232 h TA8723 2N6108 RCA ta7741 TA7743 TA7742 ta7782 2N6475
Contextual Info: Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors TERMINAL DESIGNATIONS 7=3 3 - £ General-Purpose Medium-Power Types for Switching and Amplifier Applications Features: • Low saturation voltages • Complementary n-p-n and p-n-p types • Maximum safe-area-of-operation curves specified

JE230

Abstract: JE370
Contextual Info: NATL SEI1IC0ND {DISCRETE} NATL SEMICOND, DE tSDllBD □□3S4bO 7 28C 3 5 4 6 0 (D ISCRETE 7 p g; o< « HI -s U< IU JCs : in to »-‘ do in in in in »- • r-' O T-’ o O in in in in *- I Wo t-* o o o in o in r i *-* CV T-’ 03 > i S-« r- ff> c*j O

2N6258

Abstract: 2N5133 2N4901 2N5055 2N5129 2N5143 2N5872 2N6030 2N6132 2N6278
Contextual Info: _ 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82D 0 0 0 4 6 D ~J - o ÔE DEI 0250354 □0D0G4b 4T SILICON ADVANCED SEMICONDUCTOR .T R A N S I S T O R S POLARITY PNP PNP PNP' PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN

45C8

Abstract: n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224
Contextual Info: Power Transistors • D EV IC E ■c Max v CEO Max PO LA RITY A V - hFE M in/M ax ff \ç v CE(sat Max Cd \q A V A »T Min pD(Max) T C =25°C MHz W PACK­ AGE 0.8 15 15 25 117 115 10 10 TO-66 TO-3 TO-3 TO-39 TO-39 5.0 5.0 5.0 5.0 1.0 4.0 4.0 4.0

2N5133

Abstract: 2N6030 2N4922 npn 2N5136 TP220 transistor 2N4918 2N5042 2N5143 2N6276 2N6278
Contextual Info: ADVANCED 02 SEMICONDUCTOR DE POLARITY PNP PNP PNP' PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN NPN PNP PNP PNP NPN PNP PNP PNP NPN NPN NPN NPN PNP PNP NPN NPN NPN NPN NPN PNP PNP NPN NPN PNP PNP PNP PNP NPN