2N60B Search Results

SCR TL431 Specification

Abstract: LD7578GS
Contextual Info: LD7578 10/08/2008 Green-Mode PWM Controller with HV Start-Up Circuit and OTP Protection Rev.00 Features General Description The LD7578 integrates several functions of protections in z a SOP-8 package. It minimizes the component counts and z the circuit space.

2n60b

Abstract: 2N60A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 TO-220F 1 TO-220F1 FEATURES * RDS ON = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability

LD7575PS

Abstract: 08SP005 ld7575ds LD7575 2n60b ld7575 ps 08sp 1N4007 1206 ltec capacitor LD7575CS
Contextual Info: LD7575 07/28/2005 Green-Mode PWM Controller with High-Voltage Start-Up Circuit Product Spec. Confidential General Description Features The LD7575 is a current-mode PWM controller with z High-Voltage (500V) Startup Circuit excellent power-saving operation.

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

2n60

Abstract: 2n60b 2N60A UTC2N60 2n60 MOSFEt DC 2N60 mosfet 2n60 CHARACTERISTICS DIODE 2n60 2N60 UTC 2N60 TO-252
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

LD7578H

Abstract: LD7578H-DS-00
Contextual Info: LD7578H 2/22/2010 High Voltage Green-Mode PWM Controller with Over Temperature Protection Ver. 00 General Description Features The LD7578H integrated several functions of protections, z High-Voltage 500V Startup Circuit and EMI-improved solution in a SOP-8/or DIP-8 package.

LD7535

Abstract: uc3842 hiccup
Contextual Info: LD7535B 3/10/2008 Green-Mode PWM Controller with Integrated Protections Rev.01a General Description Features The LD7535B is a low cost, low startup current, current z mode PWM controller with green-mode power-saving High-Voltage CMOS Process with Excellent ESD

Contextual Info: LD7578J 03/03/2009 High Voltage Green-Mode PWM Controller with Over Temperature Protection Rev. 00 Features General Description The LD7578J integrates several functions of protections, z High-Voltage 500V Startup Circuit and EMI-improved solution in a SOP-8/or DIP-8 package to

LD7552D

Abstract: LD7552D-DS-00 LD7552DPS UU9.8
Contextual Info: LD7552D 12/19/2007 Green-Mode PWM Controller with Integrated Protections and Adjustable OLP Delay Time REV: 00 General Description Features The LD7552D are specifically designed for the low total z system cost by integrating many functions, protections, and

LD7575BGS

Abstract: ld7575
Contextual Info: LD7575B 5/26/2008 Green-Mode PWM Controller with High-Voltage Start-Up Circuit Rev. 00 General Description Features The LD7575B is a current-mode PWM controller with z High-Voltage 500V Startup Circuit excellent power-saving operation. It features a high-

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

LD7575APS

Contextual Info: LD7575A 11/29/2007 Green-Mode PWM Controller with High-Voltage Start-Up Circuit Rev.00a General Description Features The LD7575A is a current-mode PWM controller with z High-Voltage 500V Startup Circuit excellent power-saving operation. It features a high-

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

LD7575PS

Abstract: ld7575 equivalent EL817B equivalent 2N60B LD7575 LD7575PN 08SP005 data sheet ld7575 ps ld7575s SCR TL431 Specification
Contextual Info: LD7575 6/5/2007 Green-Mode PWM Controller with High-Voltage Start-Up Circuit REV: 04a General Description Features The LD7575 is a current-mode PWM controller with z High-Voltage 500V Startup Circuit excellent power-saving operation. It features a high-

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

8N65

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices

2N60B

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged