2N520 Search Results

2SC1815GR

Abstract: 2SC1815BL 2N3693 2SC1815-GR 2SC1815-BL 2N5209 2N5210 2N5232 2N5232A 2SC1815
Contextual Info: TO-92 PLASTIC PACKAGE TRANSISTORS NPN Typ* No. 2N5209 VC80 VCE0 VEBO (V) Mn (V) Min (V) Min 50 50 5 'cso (UA) Max 0.050 VC8 (V) hFE Min 35 50 50 5 0.050 35 9 Max Cob 'c & VCE VCE(SH| ®^BE (Sal) ® •c Ices 0 vce (mA) (uA) (V) (mA) (V) (V) (V) (Pf) Min Max

Contextual Info: DIGITRON SEMICONDUCTORS 2N681-2N692, 2N5204-2N5207 SILICON CONTROLLED RECTIFIER Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

2N5210

Abstract: transistor 2N5210 2N5209
Contextual Info: MOTOROLA Order this document by 2N5209/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5209 2N5210 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage

SCR C38

Abstract: 2N6881 C38H c38d C3SA 2N682 2N683 c231 C35U C38F
Contextual Info: - C230-2 C231-3 - C228-9 C35 C38 - C137 2N 681 -92 * - _ 2N 3870-3 2N 3896-9 - - - 2N5204-7 - 100-600 M 600 25-700 2b 500 35 22.5 •' B °C 35 20 @ 73 C 35 22.3 @ 35° C 35 22.5 & 70 C 35 22.3 @ 40° C 150 150 300 GE TYPE JEDIEC ELEC TRIC AL SPECIFICATIONS

k 3878

Abstract: 2N3879 2N650A 2n5202 2N3879A
Contextual Info: P o w e r Tran sistors File Num ber 766 2N3878, 2N3879, 2N5202, 2N6500 HARRIS SEMICOND SECTOR 27E D • 4302E71 OOnflBl 0 * H A S ~ r - 3 3 - i / High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors F o r H ig h -S p e e d S w itc h in g and L in e a r-A m p lifie r A p p lic a tio n s

2SA564A-P

Abstract: 2SA640 2SA564 TO-92B 2SC537 2SC644 2SA876H 2N5138 2SA1715 2SC372
Contextual Info: TYPE NO. H M A X IM U M R A TIN G S CASE Pd mW 'c Im A) V CEO (V) min FE V CE(SAT) max •c lm A | V CE (V) max (V) 'c Im A I fT min (MHz) Cob N.F. max max (pF) (dB) _ 2N5138 2N 5172 2N5209 2N5210 2N5219 P IM N N N TO -IO 6 TO-92B T O -92A TO-92A TO -92A

2N1724A

Abstract: TO61 2N3442 2N1724 2N1725 2N3773 2N3878 2N3879 2N3446 2N5326
Contextual Info: _1 4 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE

2N6881

Abstract: CA37P GE C228 C137PB 2N682 2N683 C35F C35U C38F C38U
Contextual Info: - C230-2 C231-3 - C228-9 C35 C 38 - C137 2N 681-92* - _ 2N3870-3 2N 3896-9 - - - 2N5204-7 - 100-600 M 600 25-700 2b 500 35 22.5 •' B ° C 35 20 @ 73 C 35 22.3 @ 35° C 35 22.5 & 70 C 35 22.3 @ 40° C 150 150 300 GE TYPE JEDIEC E LEC TR IC A L SPECIFICATIONS

2n3878

Abstract: TA7285 2N3879 2N5202
Contextual Info: File N u m b e r 2N3878, 2N3879, 2N5202 766.1 High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors For H ig h -S p ee d S w itchin g and L in ea r-A m p lifie r A p p licatio n s Features: • ■ ■ M a x im u m -a re a -o f-o p e ra tio n c u rv e s l o r d c a n d p u ls e o p e r a tio n

DC4066

Abstract: MIL-PRF-19500 544 electrical 2N5206 2N683 2N692A 2N682 2N685 2N686 2N692 2N685 JANTX
Contextual Info: INCH-POUND MIL-PRF-19500/108K 4 December 2006 SUPERSEDING MIL-PRF-19500/108J 14 March 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, THYRISTORS CONTROLLED RECTIFIERS , SILICON, TYPES 2N682, 2N683, 2N685 THROUGH 2N692, 2N692A, 2N5206, JAN AND JANTX

Contextual Info: 2N5208 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)140õ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.

2N5210

Abstract: 2n5209
Contextual Info: MOTOROLA Order this document by 2N5209/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2 N 52 09 2 N 5 2 10 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r Voltage VCEO 50 Vdc C o lle c to r-B a s e Voltage

ta8932

Abstract: 2N3879 TA7285 P602I 2N5202 2N3878 2N6500 2N3679 RCA Solid State Power Transistor PT3535
Contextual Info: "üï »F|3fl7SGfll D0171QS 7 01E 17105 171Q_ _01E D High-Speed Power l 1u ° u 7^_ L— 3875081 G E SOLID STATE 2N3878, 2N3879, 2N5202, 2N6500 File N u m b e r

TK1120

Abstract: TCA 700 y BTW48-1200 TK140 BTW48-800 YJ 1100 6 TK1120V 2N5205 TCA 700 TK160V
Contextual Info: THYRISTORS , thyristors * Valeurs limites Caractéristiques électriques Absolute max. ratings Electrical charactéristics 'o A 35 A eff (rms) 2N5204 2N5205 2N5206 2N5207 35 A eff (rms) TS TS TS TS TS TS TS cecee xy xy xy :C? / 22.5 22.5 22.5 22.5 22.5 22.5

BTA12-700SW

Abstract: TLC226B BTA40-700B BTA12-700BW TLC336B BTB06-700BW BTB06-700SW btb04 600c BTA06-400GP BTA26-700B
Contextual Info: ALPHANUMERICAL INDEX Type Number AVS08-CB AVS08-CBI AVS10CB AVS10CBI AVS12CB 2N682 2N683 2N685 2N688 2N690 2N692 2N1771 2N1772 2N1774 2N1777 2N2619 2N3650 2N3651 2N3653 2N3655 2N3656 2N3658 2N5204 2N5205 2N5206 2N5207 BTA04-400A BTA04-400D BTA04-400S BTA04-400T

transistors 1U

Abstract: 2N3879 2N3878
Contextual Info: 01 » E ^ 3 f l ? S D a i 0017105 " 0 1 E 171Q5 _ 0 1E 1 7 11u0 5 High-Speed Power Transistors-— D 3875081 G E SOLID 7 STATE 2N3878, 2N3879, 2N5202, 2N6500 D u Tz. L — U File Number

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2N5172 25 25 5 0.4 2N5209 50 50 5 0.625 0.05 0.05 Po *c (W) (A) @Tc=25“c *CBO ^CB 'c e s

2N3919c

Abstract: 2N3445
Contextual Info: COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No C ase 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 TO-66 TO 1 U /I TO111/1 TO lii A TO111/1 2N5346 2N5348 2N5349 VCBO Volts V cEO «“ s Volts VEBO Volts Min Max VCE ic Vc e (sat) Vb e (sat) 1b •QjC "C/W ft

Contextual Info: 2N520 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)15 I(C) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain. h(FE) Max. Current gain.

2N5200

Contextual Info: 2N5200 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition)

LS 5087

Abstract: a5t5086
Contextual Info: TYPES 2N5086. 2N5087, A5T5086, A5T5087 P-N P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 2 Î. M A R C H 1973 SILECTt TRANSISTORS* FOR LOW-LEVEL, LOW-NOISE AUDIO AMPLIFIER APPLICATIONS • For Complementary Use with N-P-N Types 2N5209, 2N5210, A5T5209, A5T5210

Contextual Info: 2N5209 • 2N5210 NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS 1 CASE TO-92A THE 2N5209, 2N5210 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP LOW NOISE PREAMPLIFIERS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N5086, 2N5087- '0 EBC ABSOLUTE MAXIMUM RATINGS

2n3879

Abstract: 2n5202 101075A 2N3679 P602I TA7285 rdf1
Contextual Info: File Number 766.1 2N3878, 2N3879, 2N5202 HARRIS S E m C O N D SECTOR ShE D M302E71 QQMDMMl 147 • HAS ■ High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors For High-Speed Switching and Linear-Amplifier Applications Features: ■ M axim um -area-of-operatlon curves fo r d c and pulse operation

2N5239

Abstract: 2N5157 2N5202 2N5218 2N5237 2N5238 2N5240 2N5241 2N5250 2N5251
Contextual Info: • PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN hf: E V OLTAGE S NPN SAT . V O LT A GES M 3X. CASE V CE VCE V CB V EB •c (V) (A) M in. Max. (A) •b (A) V CE (V) V BE (V) 2N5157 TO-3 700 500 6 5 1 30 90 1 0.7 2.5 2 2N5202 TO-66 100 50