BC140 equivalent
Abstract: 2n4036 equivalent BAW66 Bc161 marking 2N929 2N930 BAW63 BAW63A BFS36 BFS36A
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. number* Page Type Device
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bfs362n930bs9365baw63+8bs9302bfs36a2n929baw63abc140 equivalent2n4036 equivalentbaw66bc161 marking
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BZX88C
Abstract: BZX88 BZX88C20 2N3053 equivalent 2N929 2N930 bcy59 equivalent BAW63A BFS36 BS9302
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device
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bfs362n930bs9365baw63+9bs9302bfs36a2n929baw63abzx88cbzx88bzx88c202n3053 equivalentbcy59 equivalent
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BC140 equivalent
Abstract: 2N4427 equivalent 2n4036 equivalent 2N2270 equivalent 2N3866 equivalent 2N929 2N930 BAW63 BAW63A BFS36
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type
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bfs362n930bs9365baw63+9bs9302bfs36a2n929baw63abc140 equivalent2n4427 equivalent2n4036 equivalent2n2270 equivalent2n3866 equivalent
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CA3085
Abstract: IN4001 transistor Stancor TP3 transformer triac specifications AN6157 voltage regulator ca3085a CA3085B IN914 2N2102 2N4036
Contextual Info: CT T ODU CEMEN 7 R P E A 74 T L OLE REP 00-442-7 OBS ENDED 8 M ns 1 l.com COM pplicatio intersi E R @ NO ntral A app cent Ce : l l l i a a C or em No. AN6157.2 Intersil Intelligent Power October 1999 APPLICATIONS OF THE CA3085 SERIES MONOLITHIC IC VOLTAGE REGULATORS
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an6157ca3085ca3085aca3085b+9100ma125ocin4001 transistorstancor tp3 transformertriac specificationsvoltage regulator ca3085ain9142n21022n4036
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schematic diagram ac voltage regulator
Abstract: 2N3904 TRANSISTOR using darlington amplifier 2N2102 transistor schematic diagram line ac voltage regulator ac voltage regulator using SCR circuit diagram CA3085 CA3085 diagram TRANSISTOR SUBSTITUTION DATA BOOK schematic diagram 12v ac regulator scr firing circuit ac regulator
Contextual Info: Harris Semiconductor No. AN6157.1 Harris Intelligent Power April 1994 APPLICATIONS OF THE CA3085 SERIES MONOLITHIC IC VOLTAGE REGULATORS Authors: A.C.N. Sheng and L.R. Avery The Harris CA3085, CA3085A, and CA3085B monolithic IC’s are positive-voltage regulators capable of providing output currents up to 100mA over the temperature range from 55oC to +125oC. They are supplied in 8 lead TO-5 type packages. The following tabulation shows some key characteristics and salient differences between devices in the CA3085
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an6157ca3085ca3085aca3085b+12100ma125ocaccord100maschematic diagram ac voltage regulator2n3904 transistor using darlington amplifier2n2102 transistorschematic diagram line ac voltage regulatorac voltage regulator using scr circuit diagramca3085 diagramtransistor substitution data bookschematic diagram 12v ac regulatorscr firing circuit ac regulator
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CA3085 diagram
Abstract: CA3085 triac specifications CA3059 equivalent 2N2102 transistor schematic diagram 12v ac regulator AN6157 Stancor TP3 transformer ca3085a in4001 rectifier diode
Contextual Info: Semiconductor No. AN6157.1 Harris Intelligent Power April 1994 APPLICATIONS OF THE CA3085 SERIES MONOLITHIC IC VOLTAGE REGULATORS Authors: A.C.N. Sheng and L.R. Avery The Harris CA3085, CA3085A, and CA3085B monolithic IC’s are positive-voltage regulators capable of providing output currents up to 100mA over the temperature range from 55oC to +125oC. They are supplied in 8 lead TO-5 type packages. The following tabulation shows some key characteristics and salient differences between devices in the CA3085
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an6157ca3085ca3085aca3085b+10100ma125ocwi100maca3085 diagramtriac specificationsca3059 equivalent2n2102 transistorschematic diagram 12v ac regulatorstancor tp3 transformerin4001 rectifier diode
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BC140 equivalent
Abstract: 2N3053 equivalent 2n4036 equivalent equivalent to BC177 2N929 2N930 BAW63 BAW63A BFS36 BFS36A
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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bfs362n930bs9365baw63+8bs9302bfs36a2n929baw63abc140 equivalent2n3053 equivalent2n4036 equivalentequivalent to bc177
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BC107 equivalent transistors
Abstract: BC140 equivalent BCY71 BS 2N3053 equivalent marking 1801 2N929 2N930 BAW63 BAW63A BFS36
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. number* Page Type Device
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bfs362n930bs9365baw63+9bs9302bfs36a2n929baw63abc107 equivalent transistorsbc140 equivalentbcy71 bs2n3053 equivalentmarking 1801
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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BC107 equivalent transistors
Abstract: 2N2475 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302 BS9365
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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bfs362n930bs9365baw63+6bs9302bfs36a2n929baw63abc107 equivalent transistors2n2475
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2N3053 equivalent
Abstract: f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5
Contextual Info: BS9000 Small Signal Transistors Absolute Maximum Rating 8 S Type Number 6 S 9360 F001 BS9360 F001 BS9360 F001 BS9360 F002 BS9360 F002 BS9360 F002 B S9360 F003 B S9360 F003 B S9360 F003 BS9360 F004 BS9360 F004 BS9360 F004 BS9360 F005 BS9360 F005 BS9360 F005
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bs9000bs9360bft32bft33+12bft34b593602n3053 equivalentf012transistor t05bc107 pnp equivalent2n4036 equivalentbs9365 f112bs9365f112bc177 equivalentbc108 equivalentbs93g5
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BC107 equivalent transistors
Abstract: 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent bc237 equivalent MPSa06 equivalent equivalent for BC337 bc327 replacement
Contextual Info: Philips Semiconductors Small-signal Transistors DISCONTINUED TYPE Replacement list REASON FOR DELETION REMARKS 2N1613 Discontinued 2N1711 Discontinued 2N1893 Discontinued 2N2219 Discontinued 2N2219A Discontinued 2N2222/A Discontinued 2N2369/A Discontinued
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2n16132n17112n18932n2219+162n2219a2n2222/a2n2369/a2n24842n29052n2905abc107 equivalent transistors2n5401 equivalentbc557 equivalent2n2907 equivalent2n2905 replacementbc327 equivalentbc237 equivalentmpsa06 equivalentequivalent for bc337bc327 replacement
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2N4427 equivalent
Abstract: ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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bfs362n930bs9365baw63+14bs9302bfs36a2n929baw63a2n4427 equivalentzt ferranti2n2369 equivalent2n2708bzx88-c4v3diode baw67f025ic marking z7j 2n2369marking g5
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BSS56
Abstract: f025 ic marking z7 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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bfs362n930bs9365baw63+7bs9302bfs36a2n929baw63abss56f025ic marking z7
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2N3053 equivalent
Abstract: bf258 equivalent 2N2219 2N2905 BC107 equivalent transistors bc109 equivalent BF178 BC107 pnp equivalent BC177 equivalent bc303 f-002
Contextual Info: Metal Can Complementary Pairs Maximum ratin ps BV Case | Device Type Polarity Core Drivers BV BV CBO CEO EBO ICM V V V mA hFE1 Ic mA min. max. Ic mA HFE2 fT min. min. max. MHz VCE sat IC mA V 2N3724A NPN 2N3725A NPN T039 T039 50 80 30 50 6 6 1200 1200 100
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2n3724a2n3725a2n3244bf257+14bs93652n40362n4037bs33652n3053 equivalentbf258 equivalent2n2219 2n2905bc107 equivalent transistorsbc109 equivalentbf178bc107 pnp equivalentbc177 equivalentbc303f-002
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2N4260
Abstract: F012 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
Contextual Info: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV BV BV Case hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75
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bft39bft40bft41bft29+8bft30bft31bfy50bfy51bfy52bft532n4260f012
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2N290
Abstract: bc143 2N3570 2N3571 2N3572 2N4252 2N4253 2N918 BFT79 T018
Contextual Info: Metal Can Device Type 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0-48 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T 072 T 072 T 072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200
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4-95j02n35702n35712n3572+92n9182n42522n4253high59bs93652n290bc143bft79t018
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BC107 equivalent transistors
Abstract: EQUIVALENT TRANSISTOR bc108 bc109 equivalent transistor t05 bc108 equivalent BC107 equivalent equivalent transistor bc107 2N2484 equivalent transistors equivalent of transistor bc108 BC177 equivalent
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Amplifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra
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bcw35gpbs93652n40362n4037+12bs33652n4030bc107 equivalent transistorsequivalent transistor bc108bc109 equivalenttransistor t05bc108 equivalentbc107 equivalentequivalent transistor bc1072n2484 equivalent transistorsequivalent of transistor bc108bc177 equivalent
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dv4 mosfets
Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254
Contextual Info: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its
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an7254rfm10n15rfm10n15ldv4 mosfets+8c12 ic gateca3240edepletion mosfetharris semiconductor jfetmos diemosfet cross referencen channel depletion mosfet2n4036
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POWER MOSFET APPLICATION NOTE
Abstract: RFM10N15 2N4036 AN7254 CA3240E CA3280 RFM10N15L RFM15N15 vertical JFET high power pulse generator with mosfet
Contextual Info: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note VG = 9 4.5 V VG = 5(2.5)V 6 4 VG = 4(2)V 2 The apparent conclusion from a study of the switching waveforms of the new device that halving the gate oxide thickness would double the gate capacitance and halve the switching
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100nmpower mosfet application noterfm10n152n4036+7an7254ca3240eca3280rfm10n15lrfm15n15vertical jfethigh power pulse generator with mosfet
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BC142 equivalent
Abstract: BC302 equivalent BF337 2N3440 8c BF259 2N3440 COMPLEMENTARY 2N3829 bf258 equivalent 2N4260 BFT39
Contextual Info: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20
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bft39bft40bft41bft29+15bft30bft31bfy50bfy51bfy52bft53bc142 equivalentbc302 equivalentbf3372n3440 8cbf2592n3440 complementary2n3829bf258 equivalent2n4260
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F13S
Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95j02n35702n35712n3572+142n9182n42522n4253high59bs9365f13sbfq35bc177 pnp transistortransistor bc303transistor t05bf1792n3440 equivalentbc304 equivalentbc143 equivalent
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100 amp 1000 volt GTO
Abstract: AN-7501 CA3280 vertical JFET p channel depletion mosfet 2N4036 AN75 CA3240E RFM10N15 RFM10N15L
Contextual Info: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note Pageode Useutines DRAIN CURRENT ID (A) VG = 9(4.5)V The reduction in gate drive voltage is the result of halving the thickness of the gate insulator from the industry standard
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100nm100 amp 1000 volt gtoan-7501ca3280+7vertical jfetp channel depletion mosfet2n4036an75ca3240erfm10n15rfm10n15l
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AN-7501
Abstract: CA3240E dv4 mosfets CA3280 RFM10N15 RFM10N15L RFM15N15 2N4036 P-channel 200V mos fet ca3240
Contextual Info: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note eyrds terrpoon er ) OCI O frk geode setes VG = 9(4.5)V DRAIN CURRENT (ID) (A) bt witc g vems The FET 5 lt teve wer OST) utho The reduction in gate drive voltage is the result of halving the
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100nman-7501ca3240edv4 mosfets+7ca3280rfm10n15rfm10n15lrfm15n152n4036p-channel 200v mos fetca3240
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